Abstract: The processing system (1) is provided with an etching tank (2) and a circulation pipe (7) that exits from the bottom portion of the etching tank (2) and returns to the etching tank (2). The circulation pipe (7) is provided with a liquid feed pump (8), a heat exchanger (9), a sulfuric acid concentration meter (10), and an oxidant concentration meter (11). The sulfuric acid concentration meter (10) and the oxidant concentration meter (11) can transmit measurement results to a calculation/control device (12). The etching tank (2) can be replenished with hydrogen peroxide water, sulfuric acid, and pure water through a hydrogen peroxide water supply line (13), a sulfuric acid supply line (14), and a pure water supply line (15). The calculation/control device (12) can adjust the supply amounts of hydrogen peroxide water, sulfuric acid, and pure water to respective desired amounts.

Abstract: Hydrogen peroxide water and, if necessary, sulfuric acid and/or water, are added to a sulfuric acid solution in a storage tank of an electrolytic sulfuric acid solution manufacturing system to enhance the oxidizing power of the sulfuric acid solution supplied to an electrolytic cell to perform electrolysis. The manufacturing system starts up during an initial operation after completion of the system, or after replacement of a sulfuric acid-containing solution in the system, or during an operation after the concentration of a persulfuric acid component in the sulfuric acid solution stored in the system decreases due to shutdown of the system, or other similar situations. By starting up the manufacturing system in this manner, the startup of the system, which manufactures an electrolytic sulfuric acid solution containing a persulfuric acid component generated by electrolyzing sulfuric acid, can be completed in a short time, and the energy consumption can be reduced.

Abstract: A heterocyclic compound having a structure in which a benzene ring and a nitrogen-containing heterocycle are condensed is added to a sulfuric acid solution that contains a persulfuric acid component such as peroxomonosulfuric acid, peroxomonosulfate, peroxodisulfuric acid, or peroxodisulfate as an oxidant and in which impurities that promote the reduction in the oxidant concentration are present. Here, the heterocyclic compound having a structure in which a benzene ring and a nitrogen-containing heterocycle are condensed is preferably a benzotriazole-based compound. The impurities that promote a reduction in the oxidant concentration are suitably one or more selected from copper ions, iron ions, nitrate ions, and nitrite ions.

Abstract: To allow online monitoring of the overall concentration of oxidizing substances in electrolyzed sulfuric acid, for example, in a cleaning system, absorbance data having undergone baseline correction in relation to the overall concentration of oxidizing substances by using a standard sample liquid in the form of an electrolyzed sulfuric acid preparation liquid having the same sulfuric acid concentration as the sulfuric acid concentration of the electrolyzed sulfuric acid is prepared, and absorbance is measured over wavelengths ranging from 190 to 290 nm by using a sample liquid in the form of electrolyzed sulfuric acid having a sulfuric acid concentration ranging from 60 to 97% by mass and a liquid temperature ranging from 20 to 70° C. to measure the overall concentration of oxidizing substances in the electrolyzed sulfuric acid on the basis of the data. The overall concentration of oxidizing substances in the electrolyzed sulfuric acid can thus be immediately measured.

Abstract: A cleaning method including a persulphuric acid producing step of causing a cleaning sulfuric acid solution to travel into an electrolyzing section and to circulate therethrough to produce persulphuric acid having a predetermined concentration by electrolysis in the electrolyzing section, a solution mixing step of mixing the sulfuric acid solution containing the persulphuric acid produced in the persulphuric acid producing step with a halide solution containing one or more types of halide ion without causing the solutions to travel into the electrolyzing section to produce a mixed solution having a post-mixture concentration of oxidant including the persulphuric acid that ranges from 0.001 to 2 mol/L, a heating step of heating the mixed solution, and a cleaning step of cleaning a semiconductor substrate by transporting the heated mixed solution to cause the heated mixed solution to come into contact with the semiconductor substrate.

Abstract: The present invention relates to a method and a system for cleaning a semiconductor substrate wherein Al is at last partially exposed on a silicon substrate and silicided with a metallic substance without damaging the Al and a silicide layer. A cleaning portion cleans the aforementioned semiconductor substrate. A delivery portion, disposed on the cleaning portion, delivers a solution to the semiconductor substrate. A sulfuric acid solution transfer path connected onto the delivery portion transfers a sulfuric acid solution and an adsorptive inhibitor solution transfer path connected to the delivery path transfers an adsorptive inhibitor having any one or more of N-based, S-based, and P-based polar groups to the delivery portion. The sulfuric acid solution and the adsorptive inhibitor may be mixed or separately transferred to come into contact with the semiconductor substrate.

Abstract: The invention is directed to a liquid heater for rapidly heating a liquid without overheating the liquid. The liquid heater comprises a liquid flow channel having a passage through which liquid flows, a heating part disposed outside the liquid flow channel, a heat reflecting part facing a heat radiating side of the heating part, and a cooling part through which a cooling medium flows adjacent a reverse side of a reflecting surface of the heat reflecting part for cooling the heat reflecting part. Radiant heat not absorbed in the liquid is reflected by the heat reflecting part. The heat reflecting part reflects radiant heat cooled by the cooling part so that the body of the liquid heater and peripheral members are maintained at a temperature not higher than a predetermined temperature to prevent overheating the liquid.

Abstract: If incorporated in a cleaning system using persulfuric acid, the invention serves for continuous cleaning while increasing the persulfuric acid concentration adequately to ensure enhanced cleaning performance. The invention provides a feeding apparatus that feeds persulfuric acid to a cleaning apparatus. The cleaning system uses an electrolysis reactor 10 that regenerates the persulfuric acid solution by performing electrolytic reaction to produce persulfate ions from sulfate ions contained in the solution, and a circulation line 4, 5, 6 that circulates the persulfuric acid solution between the cleaning vessel 1 and the electrolysis reactor 10. Configured as above, the invention can provides a feeding apparatus. The cleaning system comprises said configuration and a cleaning vessel 1 that cleans objects 30 using a persulfuric acid solution 2 as cleaning fluid.

Abstract: To allow online monitoring of the overall concentration of oxidizing substances in electrolyzed sulfuric acid, for example, in a cleaning system, absorbance data having undergone baseline correction in relation to the overall concentration of oxidizing substances by using a standard sample liquid in the form of an electrolyzed sulfuric acid preparation liquid having the same sulfuric acid concentration as the sulfuric acid concentration of the electrolyzed sulfuric acid is prepared, and absorbance is measured over wavelengths ranging from 190 to 290 nm by using a sample liquid in the form of electrolyzed sulfuric acid having a sulfuric acid concentration ranging from 60 to 97% by mass and a liquid temperature ranging from 20 to 70° C. to measure the overall concentration of oxidizing substances in the electrolyzed sulfuric acid on the basis of the data. The overall concentration of oxidizing substances in the electrolyzed sulfuric acid can thus be immediately measured.

Abstract: A method and system for cleaning a semiconductor substrate in which Al is at least partially exposed on a silicon substrate and which is silicided with a metallic substance, without damaging Al and a silicide layer, comprising a cleaning portion (2) for cleaning a semiconductor substrate 100 in which Al is at least partially exposed on a silicon substrate and which is silicided with a metallic substance; a delivery portion (30) disposed in the cleaning portion for delivering a cleaning solution to the semiconductor substrate in the cleaning portion to bring the cleaning solution into contact with the semiconductor substrate; a sulfuric acid solution transfer path (5) connected to the delivery portion for transferring a sulfuric acid solution comprising an oxidant to the delivery portion; and an adsorptive inhibitor solution transfer path (11) connected to the delivery portion for transferring a solution comprising an adsorptive inhibitor having any one or more of N-based, S-based, and P-based polar groups to

Abstract: A cleaning method including a persulphuric acid producing step of causing a cleaning sulfuric acid solution to travel into an electrolyzing section and to circulate therethrough to produce persulphuric acid having a predetermined concentration by electrolysis in the electrolyzing section, a solution mixing step of mixing the sulfuric acid solution containing the persulphuric acid produced in the persulphuric acid producing step with a halide solution containing one or more types of halide ion without causing the solutions to travel into the electrolyzing section to produce a mixed solution having a post-mixture concentration of oxidant including the persulphuric acid that ranges from 0.001 to 2 mol/L, a heating step of heating the mixed solution, and a cleaning step of cleaning a semiconductor substrate by transporting the heated mixed solution to cause the heated mixed solution to come into contact with the semiconductor substrate.

Abstract: Provided is a method for cleaning a metal gate semiconductor, by which a resist adhering to a semiconductor can be effectively stripped while etching of metal gates is suppressed. The method includes an ashing step (step s1) of ashing a photoresist on a semiconductor; and a persulfuric acid cleaning step (step s2) of bringing, after the ashing step, the semiconductor that has been subjected to the ashing step into contact with a sulfuric acid solution containing persulfuric acid, and thereby stripping the photoresist on the semiconductor from the semiconductor, while the sulfuric acid solution containing persulfuric acid used in the persulfuric acid cleaning step has a hydrogen peroxide concentration of 16 mM as O or less, a sulfuric acid concentration of from 90% by mass to 96% by mass, a liquid temperature of from 70° C. to 130° C., and a persulfuric acid concentration of from 0.50 mM as O to 25 mM as O.

Abstract: The invention is directed to a liquid heater for rapidly heating a liquid without overheating the liquid. The liquid heater comprises a liquid flow channel having a passage through which liquid flows, a heating part disposed outside the liquid flow channel, a heat reflecting part facing a heat radiating side of the heating part, and a cooling part through which a cooling medium flows adjacent a reverse side of a reflecting surface of the heat reflecting part for cooling the heat reflecting part. Radiant heat not absorbed in the liquid is reflected by the heat reflecting part. The heat reflecting part reflects radiant heat cooled by the cooling part so that the body of the liquid heater and peripheral members are maintained at a temperature not higher than a predetermined temperature to prevent overheating the liquid.

Abstract: Provided are an electrolyzing unit (electrolyzing device 1) that electrolyzes a sulfuric acid solution having a sulfuric acid concentration of 75 to 96% by weight to generate peroxosulfuric acid, a gas-liquid separation unit (gas-liquid separation tank 10) that subjects the sulfuric acid solution thus electrolyzed to gas-liquid separation, a circulation line 11 that causes a portion of the sulfuric acid solution subjected to gas-liquid separation in the gas-liquid separation unit to circulate between it and the electrolyzing unit, a supply line 20 that supplies a portion of the sulfuric acid solution subjected to gas-liquid separation in the gas-liquid separation unit to an application side (single-wafer cleaning device 100), and a heating unit 22 that is provided in the supply line 20 and heats the sulfuric acid solution to 120 to 190° C.

Abstract: An electronic material cleaning system includes a chemical cleaning means, a wet cleaning means and a single-wafer cleaning apparatus. The chemical cleaning means comprises a functional chemical storage tank and an electrolytic reaction apparatus connected to the functional chemical storage tank via a concentrated sulfuric acid electrolysis line. The functional chemical storage tank can supply a functional chemical to the single-wafer cleaning apparatus via a functional chemical supply line. The wet cleaning means comprises a pure water supply line, a nitrogen gas supply line connected to a nitrogen gas source and an internal mixing type two-fluid nozzle connected respectively to the pure water supply line and the nitrogen gas supply line. Droplets generated from a nitrogen gas and ultrapure water can be sprayed from the tip of the two-fluid nozzle.

Abstract: If incorporated in a cleaning system using persulfuric acid, the invention serves for continuous cleaning while increasing the persulfuric acid concentration adequately to ensure enhanced cleaning performance. The invention provides a feeding apparatus that feeds persulfuric acid to a cleaning apparatus. The cleaning system uses an electrolysis reactor 10 that regenerates the persulfuric acid solution by performing electrolytic reaction to produce persulfate ions from sulfate ions contained in the solution, and a circulation line 4, 5, 6 that circulates the persulfuric acid solution between the cleaning vessel 1 and the electrolysis reactor 10. Configured as above, the invention can provides a feeding apparatus. The cleaning system comprises said configuration and a cleaning vessel 1 that cleans objects 30 using a persulfuric acid solution 2 as cleaning fluid.