Patents by Inventor Hau-Tai Shieh
Hau-Tai Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11670362Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.Type: GrantFiled: March 4, 2022Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
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Publication number: 20230064056Abstract: A device is disclosed and includes an input stage circuit, a switching circuit, and a first latch circuit. The input stage circuit generates a first input signal having a first voltage and a second input signal based on a third input signal. The switching circuit operates in response to a first control signal, and adjusts a voltage level of a first data line according to the first input signal and a voltage level of a second data line according to the second input signal. The first latch circuit is coupled to the switching circuit by the first data line and the second data line. The first latch circuit latches a data in response to the first control signal and a second control signal, and adjusts the voltage level of the first data line based on a second voltage different from the first voltage.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hua-Hsin YU, Hung-Jen LIAO, Cheng-Hung LEE, Hau-Tai SHIEH
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Publication number: 20230053795Abstract: A bit line is pre-charged based on a clock signal internal to a bit line pre-charge circuit when a bit line pre-charge window is within a margin of a predetermined pre-charge window. A bit line is pre-charged based on a clock signal external to the bit line pre-charge circuit when the bit line pre-charge window is outside the margin of the predetermined pre-charge window.Type: ApplicationFiled: August 23, 2022Publication date: February 23, 2023Inventors: Che-Ju Yeh, Yu-Hao Hsu, Hau-Tai Shieh, Cheng Lee
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Patent number: 11568121Abstract: A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.Type: GrantFiled: April 9, 2021Date of Patent: January 31, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Tzu Chen, Hau-Tai Shieh, Che-Ju Yeh
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Publication number: 20220366950Abstract: A memory circuit includes a NAND logic gate configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The memory circuit further includes a first N-type transistor coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The memory circuit further includes a second N-type transistor coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The memory circuit further includes a first latch coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.Type: ApplicationFiled: July 29, 2022Publication date: November 17, 2022Inventors: Yi-Tzu CHEN, Ching-Wei WU, Hau-Tai SHIEH, Hung-Jen LIAO, Fu-An WU, He-Zhou WAN, XiuLi YANG
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Publication number: 20220367337Abstract: Circuit devices, such as integrated circuit devices, are constructed with combination circuits that include two or more cascading transistors, and one or more metal layers disposed over the cascading transistors. The cascading transistors include multiple internal nodes (e.g., common source/drain regions). The multiple internal nodes are not connected to a common metal stripe (the same metal stripe) in the one or more metal layers. The absence of the connections between the internal nodes and a common metal stripe reduce or eliminate the load on the internal nodes. The transistors in the cascading transistors are independent of each other.Type: ApplicationFiled: July 29, 2022Publication date: November 17, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Yuan Chen, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Kao-Cheng Lin, Wei-Min Chan
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Publication number: 20220359000Abstract: A memory device and a method of operating the same are disclosed. In one aspect, the memory device includes a plurality of memory arrays and a controller including a plurality of buffers including a first buffer connected to a first memory array and a second buffer connected to a second memory array. The first and second memory arrays are disposed on opposing sides of the controller. The memory device can include a first wire extending in a first direction and connected to the first buffer, a second wire extending in the first direction and connected to the second buffer, and a third wire connected to the first and second wires and extending in a second direction that is substantially perpendicular to the first direction. The third wire can be electrically connected to the controller, and respective lengths of the first wire and the second wire are substantially the same.Type: ApplicationFiled: May 6, 2021Publication date: November 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: CHIEN-YUAN CHEN, Hau-Tai Shieh, Cheng Hung Lee, Hung-Jen Liao
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Patent number: 11468929Abstract: A memory circuit includes a NAND logic gate, a first N-type transistor, a second N-type transistor, a first inverter and a first latch. The NAND logic gate is configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The first N-type transistor is coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The second N-type transistor is coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The first inverter is coupled to the NAND logic gate, and configured to output a data signal inverted from the first signal. The first latch is coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.Type: GrantFiled: April 20, 2021Date of Patent: October 11, 2022Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY, LIMITEDInventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao, Fu-An Wu, He-Zhou Wan, XiuLi Yang
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Patent number: 11450605Abstract: Circuit devices, such as integrated circuit devices, are constructed with combination circuits that include two or more cascading transistors, and one or more metal layers disposed over the cascading transistors. The cascading transistors include multiple internal nodes (e.g., common source/drain regions). The multiple internal nodes are not connected to a common metal stripe (the same metal stripe) in the one or more metal layers. The absence of the connections between the internal nodes and a common metal stripe reduce or eliminate the load on the internal nodes. The transistors in the cascading transistors are independent of each other.Type: GrantFiled: February 11, 2021Date of Patent: September 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Yuan Chen, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Kao-Cheng Lin, Wei-Min Chan
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Patent number: 11444608Abstract: A level shifter includes: a first inverter configured to receive an input signal in a low voltage domain and shift the input signal from the low voltage domain to a first output signal at a first output terminal in a high voltage domain higher than the low voltage domain in response to a logical high state of a first clock signal in the low voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the low voltage domain to a second output signal at a second output terminal in the high voltage domain in response to the logical high state; a first NMOS sensing transistor and a second NMOS sensing transistor; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.Type: GrantFiled: July 2, 2021Date of Patent: September 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Yuan Chen, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
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Publication number: 20220284941Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.Type: ApplicationFiled: May 25, 2022Publication date: September 8, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
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Publication number: 20220277781Abstract: A memory circuit includes a NAND logic gate, a first N-type transistor, a second N-type transistor, a first inverter and a first latch. The NAND logic gate is configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The first N-type transistor is coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The second N-type transistor is coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The first inverter is coupled to the NAND logic gate, and configured to output a data signal inverted from the first signal. The first latch is coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.Type: ApplicationFiled: April 20, 2021Publication date: September 1, 2022Inventors: Yi-Tzu CHEN, Ching-Wei WU, Hau-Tai SHIEH, Hung-Jen LIAO, Fu-An WU, He-Zhou WAN, XiuLi YANG
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Patent number: 11423962Abstract: A bit line is pre-charged based on a clock signal internal to a bit line pre-charge circuit when a bit line pre-charge window is within a margin of a predetermined pre-charge window. A bit line is pre-charged based on a clock signal external to the bit line pre-charge circuit when the bit line pre-charge window is outside the margin of the predetermined pre-charge window.Type: GrantFiled: May 27, 2021Date of Patent: August 23, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, ltd.Inventors: Che-Ju Yeh, Yu-Hao Hsu, Hau-Tai Shieh, Cheng Lee
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Publication number: 20220254712Abstract: Circuit devices, such as integrated circuit devices, are constructed with combination circuits that include two or more cascading transistors, and one or more metal layers disposed over the cascading transistors. The cascading transistors include multiple internal nodes (e.g., common source/drain regions). The multiple internal nodes are not connected to a common metal stripe (the same metal stripe) in the one or more metal layers. The absence of the connections between the internal nodes and a common metal stripe reduce or eliminate the load on the internal nodes. The transistors in the cascading transistors are independent of each other.Type: ApplicationFiled: February 11, 2021Publication date: August 11, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Yuan Chen, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Kao-Cheng Lin, Wei-Min Chan
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Publication number: 20220199145Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.Type: ApplicationFiled: March 4, 2022Publication date: June 23, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
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Patent number: 11361810Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.Type: GrantFiled: November 24, 2020Date of Patent: June 14, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
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Patent number: 11361812Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.Type: GrantFiled: October 27, 2020Date of Patent: June 14, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
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Publication number: 20220130446Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.Type: ApplicationFiled: October 27, 2020Publication date: April 28, 2022Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
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Patent number: 11302701Abstract: Systems and methods are provided for fabricating a static random access memory (SRAM) cell in a multi-layer semiconductor device structure. An example SRAM device includes a first array of SRAM cells, a second array of SRAM cells, a processing component, and one or more inter-layer connection structures. The first array of SRAM cells are formed in a first device layer of a multi-layer semiconductor device structure. The second array of SRAM cells are formed in a second device layer of the multi-layer semiconductor device structure, the second device layer being formed on the first device layer. The processing component is configured to process one or more input signals and generate one or more access signals. One or more inter-layer connection structures are configured to transmit the one or more access signals to activate the first device layer or the second device layer for allowing access to a target SRAM cell.Type: GrantFiled: August 24, 2020Date of Patent: April 12, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chien-Yu Huang, Chien-Yuan Chen, Hau-Tai Shieh
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Publication number: 20220093587Abstract: An integrated circuit (IC) structure includes a first transistor and a second transistor. The first transistor includes a first active region and a first gate disposed on the first active region, in which the first gate has a first effective gate length along a first direction parallel to a lengthwise direction of the first active region. The second transistor includes a second active region and a second gate disposed on the second active region, and includes a plurality of gate structures arranged along the first direction and separated from each other, in which the second gate has a second effective gate length along the first direction, the second effective gate length is n times the first effective gate length, and n is a positive integer greater than 1.Type: ApplicationFiled: September 18, 2020Publication date: March 24, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Yuan CHEN, Hau-Tai SHIEH