Patents by Inventor Hauk Han
Hauk Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240130126Abstract: A non-volatile memory device including a substrate including a first area and a second area, a mold structure on the substrate, the mold structure including gate electrodes and mold insulating films alternately stacked on each other in a stepwise manner, an interlayer insulating film covering the mold structure, a channel structure on the first area, the channel structure extending through the mold structure and connected to the gate electrodes, and a through-contact on the second area and extending through the interlayer insulating film, the through-contact including a first portion in a first trench and a second portion in a second trench, the first portion including a liner film along a sidewall and a bottom surface of the first trench and a filling film on the liner film, wherein the filling film being a multi-grain conductive material, and the second portion being a single grain conductive material, may be provided.Type: ApplicationFiled: July 10, 2023Publication date: April 18, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Yeong Dong MUN, Seong Hun PARK, Hauk HAN, Seong Jin KIM
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Patent number: 11930641Abstract: A semiconductor device includes circuit elements on a first substrate; gate electrodes on a second substrate and stacked to be apart from each other in a first direction; sacrificial insulating layers on a lower through-insulating layer penetrating the second substrate, stacked to be spaced apart from each other in the first direction, and having side surfaces opposing the gate electrodes; channel structures penetrating the gate electrodes, extending vertically on the second substrate, and including a channel layer; a first separation pattern penetrating the gate electrodes and including a first barrier pattern and a first pattern portion extending from the first barrier pattern in a second direction; and a second separation pattern penetrating the gate electrodes, disposed to be parallel to the first separation pattern, and extending in the second direction. Some of the side surfaces of the sacrificial insulating layers may overlap the first barrier pattern in a third direction.Type: GrantFiled: March 19, 2021Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Jeonggil Lee, Taisoo Lim, Hauk Han
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Publication number: 20230343706Abstract: A semiconductor device includes an insulating structure, a first conductive structure in the insulating structure, the first conductive structure including a first conductive layer and a second conductive layer, and a second conductive structure in the insulating structure, the second conductive structure including a first conductive layer of the second conductive structure. A width of the first conductive structure is larger than a width of the second conductive structure. The first conductive layer of the first conductive structure, the second conductive layer of the first conductive structure, and the first conductive layer of the second conductive structure include a same nonmetal element. A concentration of the nonmetal element in the second conductive layer of the first conductive structure is higher than a concentration of the nonmetal element in the first conductive layer of the first conductive structure and first conductive layer of the second conductive structure.Type: ApplicationFiled: January 24, 2023Publication date: October 26, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Hauk HAN, Seonghun PARK, Jeonggil LEE
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Patent number: 11744073Abstract: A semiconductor device includes gate electrodes and interlayer insulating layers that are alternately stacked on a substrate, channel structures spaced apart from each other in a first direction and extending vertically through the gate electrodes and the interlayer insulating layers to the substrate, and a first separation region extending vertically through the gate electrodes and the interlayer insulating layers. Each gate electrode includes a first conductive layer and a second conductive layer, the first conductive layer disposed between the second conductive layer and each of two adjacent interlayer insulating layers. In a first region, between an outermost channel structure and the first separation region, of each gate electrode, the first conductive layer has a decreasing thickness toward the first separation region and the second conductive layer has an increasing thickness toward the first separation region.Type: GrantFiled: November 19, 2021Date of Patent: August 29, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Taisoo Lim, Kyungwook Park, Keun Lee, Hauk Han
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Publication number: 20230135639Abstract: An electrode structure includes a conductive electrode, the conductive electrode including a first surface, an insulating layer on the conductive electrode, the insulating layer being in contact with the first surface of the conductive electrode, and a nano dot pattern in the conductive electrode and spaced apart from the first surface of the conductive electrode, the nano dot pattern including nano dots arranged in parallel to the first surface of the conductive electrode, and each of the nano dots including a first side surface adjacent to the first surface of the conductive electrode, the first side surface being flat and parallel to the first surface of the conductive electrode, and a second side surface opposite to the first side surface, the second side surface being convex in a direction away from the first surface of the conductive electrode.Type: ApplicationFiled: August 16, 2022Publication date: May 4, 2023Inventors: Keun LEE, Kihyun YOON, Jeonggil LEE, Hauk HAN
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Patent number: 11462553Abstract: Semiconductor devices including a substrate including a cell array region and a through electrode region, an electrode stack on the substrate and including electrodes, vertical structures penetrating the electrode stack within the cell array region, vertical fence structures within an extension region and surrounding the through electrode region, and insulating layers being inside a perimeter defined by the vertical fence structures and being at the same level as the electrodes may be provided. The electrodes may include first protrusions protruding between the vertical fence structures in a plan view.Type: GrantFiled: September 28, 2020Date of Patent: October 4, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Shinjae Kang, Woosung Lee, Jeonggil Lee, Hanmei Choi, Hauk Han
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Patent number: 11430665Abstract: A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.Type: GrantFiled: July 14, 2020Date of Patent: August 30, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Taisoo Lim, Kyungwook Park, Wangyup Ryu, Keun Lee, Changwoo Lee, Hauk Han
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Publication number: 20220077190Abstract: A semiconductor device includes gate electrodes and interlayer insulating layers that are alternately stacked on a substrate, channel structures spaced apart from each other in a first direction and extending vertically through the gate electrodes and the interlayer insulating layers to the substrate, and a first separation region extending vertically through the gate electrodes and the interlayer insulating layers. Each gate electrode includes a first conductive layer and a second conductive layer, the first conductive layer disposed between the second conductive layer and each of two adjacent interlayer insulating layers. In a first region, between an outermost channel structure and the first separation region, of each gate electrode, the first conductive layer has a decreasing thickness toward the first separation region and the second conductive layer has an increasing thickness toward the first separation region.Type: ApplicationFiled: November 19, 2021Publication date: March 10, 2022Inventors: Taisoo Lim, Kyungwook Park, Keun Lee, Hauk Han
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Publication number: 20220037351Abstract: A semiconductor device includes circuit elements on a first substrate; gate electrodes on a second substrate and stacked to be apart from each other in a first direction; sacrificial insulating layers on a lower through-insulating layer penetrating the second substrate, stacked to be spaced apart from each other in the first direction, and having side surfaces opposing the gate electrodes; channel structures penetrating the gate electrodes, extending vertically on the second substrate, and including a channel layer; a first separation pattern penetrating the gate electrodes and including a first barrier pattern and a first pattern portion extending from the first barrier pattern in a second direction; and a second separation pattern penetrating the gate electrodes, disposed to be parallel to the first separation pattern, and extending in the second direction. Some of the side surfaces of the sacrificial insulating layers may overlap the first barrier pattern in a third direction.Type: ApplicationFiled: March 19, 2021Publication date: February 3, 2022Inventors: Jeonggil LEE, Taisoo LIM, Hauk HAN
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Publication number: 20210384217Abstract: A semiconductor device includes gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of a substrate; interlayer insulating layers alternately stacked with the gate electrodes on the substrate; channel structures extending through the gate electrodes; and a separation region extending through the gate electrodes in the first direction and extending in a second direction perpendicular to the first direction, wherein each of the gate electrodes comprises a first conductive layer and a second conductive layer sequentially stacked, the second conductive layer including a metal nitride, and wherein the first conductive layer and the second conductive layer are each in physical contact with the separation region.Type: ApplicationFiled: January 18, 2021Publication date: December 9, 2021Inventors: Hauk Han, Taeyong Kim, Keun Lee, Jeonggil Lee, Taisoo Lim, Hanmei Choi
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Patent number: 11189633Abstract: A semiconductor device includes gate electrodes and interlayer insulating layers that are alternately stacked on a substrate, channel structures spaced apart from each other in a first direction and extending vertically through the gate electrodes and the interlayer insulating layers to the substrate, and a first separation region extending vertically through the gate electrodes and the interlayer insulating layers. Each gate electrode includes a first conductive layer and a second conductive layer, the first conductive layer disposed between the second conductive layer and each of two adjacent interlayer insulating layers. In a first region, between an outermost channel structure and the first separation region, of each gate electrode, the first conductive layer has a decreasing thickness toward the first separation region and the second conductive layer has an increasing thickness toward the first separation region.Type: GrantFiled: December 2, 2019Date of Patent: November 30, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Taisoo Lim, Kyungwook Park, Keun Lee, Hauk Han
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Publication number: 20210265373Abstract: Semiconductor devices including a substrate including a cell array region and a through electrode region, an electrode stack on the substrate and including electrodes, vertical structures penetrating the electrode stack within the cell array region, vertical fence structures within an extension region and surrounding the through electrode region, and insulating layers being inside a perimeter defined by the vertical fence structures and being at the same level as the electrodes may be provided. The electrodes may include first protrusions protruding between the vertical fence structures in a plan view.Type: ApplicationFiled: September 28, 2020Publication date: August 26, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Shinjae KANG, Woosung LEE, Jeonggil LEE, Hanmei CHOI, Hauk HAN
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Publication number: 20210159086Abstract: A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.Type: ApplicationFiled: July 14, 2020Publication date: May 27, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Taisoo LIM, Kyungwook PARK, Wangyup RYU, Keun LEE, Changwoo LEE, Hauk HAN
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Publication number: 20200303409Abstract: A semiconductor device includes gate electrodes and interlayer insulating layers that are alternately stacked on a substrate, channel structures spaced apart from each other in a first direction and extending vertically through the gate electrodes and the interlayer insulating layers to the substrate, and a first separation region extending vertically through the gate electrodes and the interlayer insulating layers. Each gate electrode includes a first conductive layer and a second conductive layer, the first conductive layer disposed between the second conductive layer and each of two adjacent interlayer insulating layers. In a first region, between an outermost channel structure and the first separation region, of each gate electrode, the first conductive layer has a decreasing thickness toward the first separation region and the second conductive layer has an increasing thickness toward the first separation region.Type: ApplicationFiled: December 2, 2019Publication date: September 24, 2020Inventors: Taisoo Lim, Kyungwook Park, Keun Lee, Hauk Han
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Patent number: 10734493Abstract: A semiconductor memory device may include a substrate, gate electrode structures stacked on the substrate, insulation patterns between the gate electrode structures, vertical channels penetrating through the gate electrode structures and the insulation patterns, and a data storage pattern. The vertical channels may be electrically connected to the substrate. The data storage pattern may be arranged between the gate electrode structures and the vertical channels. Each of the gate electrode structures may include a barrier film, a metal gate, and a crystal grain boundary plugging layer. The crystal grain boundary plugging layer may be between the barrier film and the metal gate.Type: GrantFiled: July 9, 2018Date of Patent: August 4, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Hauk Han, Je-hyeon Park, Do-hyung Kim, Tae-yong Kim, Keun Lee, Jeong-gil Lee, Hyun-seok Lim
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Publication number: 20190013388Abstract: A semiconductor memory device may include a substrate, gate electrode structures stacked on the substrate, insulation patterns between the gate electrode structures, vertical channels penetrating through the gate electrode structures and the insulation patterns, and a data storage pattern. The vertical channels may be electrically connected to the substrate. The data storage pattern may be arranged between the gate electrode structures and the vertical channels. Each of the gate electrode structures may include a barrier film, a metal gate, and a crystal grain boundary plugging layer. The crystal grain boundary plugging layer may be between the barrier film and the metal gate.Type: ApplicationFiled: July 9, 2018Publication date: January 10, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Hauk Han, Je-Hyeon Park, Do-hyung Kim, Tae-yong Kim, Keun Lee, Jeong-gil Lee, Hyun-seok Lim
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Publication number: 20180358379Abstract: A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.Type: ApplicationFiled: August 22, 2018Publication date: December 13, 2018Inventors: Hauk HAN, Je-Hyeon PARK, Kihyun YOON, Changwon LEE, HyunSeok LIM, Jooyeon HA
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Patent number: 10079245Abstract: A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.Type: GrantFiled: August 26, 2016Date of Patent: September 18, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hauk Han, Je-Hyeon Park, Kihyun Yoon, Changwon Lee, HyunSeok Lim, Jooyeon Ha
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Patent number: 10074560Abstract: A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.Type: GrantFiled: May 22, 2017Date of Patent: September 11, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-hyun Yoon, Hauk Han, Yeon-sil Sohn, Seul-gi Bae, Hyun-seok Lim
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Patent number: 9997462Abstract: A memory device includes a vertical string of nonvolatile memory cells on a substrate, along with a ground selection transistor extending between the vertical string of nonvolatile memory cells and the substrate. The ground selection transistor can have a current carrying terminal electrically coupled to a channel region of a nonvolatile memory cell in the vertical string of nonvolatile memory cells. The ground selection transistor includes a gate electrode associated with a ground selection line of the memory device. This gate electrode includes: (i) a mask pattern, (ii) a barrier metal layer of a first material extending opposite a sidewall of the mask pattern and (iii) a metal pattern of a second material different from the first material extending between at least a portion of the barrier metal layer and the mask pattern.Type: GrantFiled: April 28, 2017Date of Patent: June 12, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jooyeon Ha, Jeonggil Lee, Dohyung Kim, Keun Lee, HyunSeok Lim, Hauk Han