Patents by Inventor Hauyee Chang

Hauyee Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11821860
    Abstract: A collision avoidance system and method for an x-ray CT microscope processes image data of an object at different angles and generates a model of the object. This model is then used to configure the microscope for operation and possibly avoid collisions between the microscope and the object.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: November 21, 2023
    Assignee: CARL ZEISS X-RAY MICROSCOPY INC.
    Inventors: Lars Omlor, Hauyee Chang
  • Publication number: 20210116401
    Abstract: A collision avoidance system and method for an x-ray CT microscope processes image data of an object at different angles and generates a model of the object. This model is then used to configure the microscope for operation and possibly avoid collisions between the microscope and the object.
    Type: Application
    Filed: October 14, 2020
    Publication date: April 22, 2021
    Inventors: Lars Omlor, Hauyee Chang
  • Patent number: 8068579
    Abstract: A process to determine the porosity and/or mineral content of mineral samples with an x-ray CT system is described. Based on the direct-projection techniques that use a spatially-resolved x-ray detector to record the x-ray radiation passing through the sample, 1 micrometer or better resolution is achievable. Furthermore, by using an x-ray objective lens to magnify the x-ray image in a microscope configuration, a higher resolution of up to 50 nanometers or more is achieved with state-of-the-art technology. These x-ray CT techniques directly obtain the 3D structure of the sample with no modifications to the sample being necessary. Furthermore, fluid or gas flow experiments can often be conducted during data acquisition so that one may perform live monitoring of the physical process in 3D.
    Type: Grant
    Filed: April 9, 2009
    Date of Patent: November 29, 2011
    Assignee: Xradia, Inc.
    Inventors: Wenbing Yun, Michael Feser, Andrei Tkachuk, Thomas A. Case, Frederick W. Duewer, Hauyee Chang
  • Patent number: 6660414
    Abstract: A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (BaxSr1−x)TiO3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (BaxSr1−x)TiO3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.
    Type: Grant
    Filed: April 26, 1999
    Date of Patent: December 9, 2003
    Assignee: U.S. Department of Energy
    Inventors: Xiao-Dong Xiang, Hauyee Chang, Chen Gao, Ichiro Takeuchi, Peter G. Schultz
  • Patent number: 6285049
    Abstract: A dielectric thin-film material for microwave applications, including use as a capacitor, the thin-film comprising a composition of barium strontium calcium and titanium of perovskite type (BaxSryCa1−x−y)TiO3. Also provided is a method for making a dielectric thin film of that formula over a wide compositional range through a single deposition process.
    Type: Grant
    Filed: September 28, 2000
    Date of Patent: September 4, 2001
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Xiao-Dong Xiang, Hauyee Chang, Ichiro Takeuchi
  • Patent number: 6146907
    Abstract: A dielectric thin-film material for microwave applications, including use as a capacitor, the thin-film comprising a composition of barium strontium calcium and titanium of perovskite type (Ba.sub.x Sr.sub.y Ca.sub.1-x-y)TiO.sub.3. Also provided is a method for making a dielectric thin film of that formula over a wide compositional range through a single deposition process.
    Type: Grant
    Filed: October 19, 1999
    Date of Patent: November 14, 2000
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Xiao-Dong Xiang, Hauyee Chang, Ichiro Takeuchi