Abstract: A photoelectric conversion device includes, on one principal surface of a semiconductor substrate, a first conductivity-type region, a second conductivity-type region, and a boundary region which is in contact with each of the first conductivity-type region and the second conductivity-type region to separate these two regions. A first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extending over the boundary region. A second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extending over the boundary region. An insulating layer is disposed over the entire boundary region. A first electrode is disposed over the entire first conductivity-type region and extending over the boundary region, and a second electrode is disposed over the second conductivity-type region.

Abstract: A solar cell module includes a first solar cell including, in the following order, a single-crystalline silicon substrate, a conductive silicon layer, and a back side transparent electrode layer, where the conductive silicon layer and the back side transparent electrode layer are disposed on a back side of the single-crystalline silicon substrate; an encapsulant; and a flexible metal foil disposed between the back side transparent electrode layer and the encapsulant. The flexible metal foil is in contact with the back side transparent electrode layer in a non-bonded state. The encapsulant encapsulates the first solar cell and maintains a contact state between the flexible metal foil and the back side transparent electrode layer.

Abstract: A crystalline silicon solar cell module includes a crystalline silicon solar cell and an interconnector. The interconnector is electrically connected to the crystalline silicon solar cell. The crystalline silicon solar cell includes a photoelectric conversion section that has a first surface and a second surface opposite to the first surface. The crystalline silicon solar cell also includes a plurality of first finger electrodes arranged side by side on the first surface of the photoelectric conversion section. The crystalline silicon solar cell further includes a first insulating layer over the first surface of the photoelectric conversion section and the first finger electrodes. The interconnector extends across the plurality of first finger electrodes and electrically connects the first finger electrodes. The first insulating layer has an opening through which the first finger electrodes and the interconnector are electrically connected.

Abstract: The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided. In a region where the n-type semiconductor layer is provided on the p-type semiconductor layer, a protecting layer is between the p-type semiconductor layer and the n-type semiconductor layer. The protecting layer includes: an underlying protecting layer that is in contact with the p-type semiconductor layer; and an insulating layer that is on the underlying protecting layer. The underlying protecting layer includes an intrinsic silicon-based layer or an n-type silicon-based layer.

Abstract: A solar cell includes: first conductivity-type layers and second conductivity-type layers each provided on a rear surface of a semiconductor substrate; first electrodes provided on the first conductivity-type layers; and second electrodes provided on the second conductivity-type layers. The first electrodes and the second electrodes are spaced apart from each other, and the first electrodes include a plurality of regions isolated from one another by the second electrodes disposed therebetween. Each of the plurality of regions of the first electrodes includes a non-mounting electrode section and a wiring-mounting electrode section having a larger electrode height than the non-connection electrode section. In two adjacent first electrode regions, an imaginary line connecting the top of the wiring-mounting electrode section of one of the regions and the top of the wiring-mounting electrode section of the other region does not cross the second electrode disposed between the two regions.

Abstract: An I-V measurement method is provided for a solar cell having a collecting electrode on the first surface side of a single-crystalline silicon substrate of a first conductivity type and having a transparent electrode on the outermost surface on the second surface side of the single-crystalline silicon substrate of the first conductivity-type. An electric current is supplied to the solar cell in a state in which flexible metal foil and the transparent electrode are brought into detachable contact with each other such that the flexible metal foil follows undulations of the single-crystalline silicon substrate of a first conductivity type, and the first surface is set as a light-receiving surface. It is preferable that at least on a portion that is in contact with the transparent electrode, the metal foil is formed of at least one selected from the group consisting of Sn, Ag, Ni, In, and Cu.