Patents by Inventor Hazimu Ohnishi

Hazimu Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of supplying silicon raw material, method of producing silicon single crystal, and poly-silicon
    Patent number: 6461426
    Abstract: The production efficiency of silicon single crystal produced by additional charge or recharge method is improved by avoiding loss due to undissolved portion of poly-silicon rod supplied in the additional charge or recharge. A poly-silicon rod 20 as an additional charge is brought down in a silicon melt 11 in a crucible 10, while being directly supported by a seed crystal 40. The poly-silicon rod 20 is brought down to be totally supplied to the silicon melt 11, and then silicon single crystal 44 is pulled using the seed crystal 40.
    Type: Grant
    Filed: December 1, 2000
    Date of Patent: October 8, 2002
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Kuniharu Inoue, Jiro Inoue, Hazimu Ohnishi, Hisao Yamamoto
  • Method of supplying silicon raw material, method of producing silicon single crystal, and poly-silicon
    Publication number: 20010010202
    Abstract: The production efficiency of silicon single crystal produced by additional charge or recharge method is improved by avoiding loss due to undissolved portion of poly-silicon rod supplied in the additional charge or recharge. A poly-silicon rod 20 as an additional charge is brought down in a silicon melt 11 in a crucible 10, while being directly supported by a seed crystal 40. The poly-silicon rod 20 is brought down to be totally supplied to the silicon melt 11, and then silicon single crystal 44 is pulled using the seed crystal 40.
    Type: Application
    Filed: December 1, 2000
    Publication date: August 2, 2001
    Inventors: Kuniharu Inoue, Jiro Inoue, Hazimu Ohnishi, Hisao Yamamoto