Patents by Inventor He FAN

He FAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11983052
    Abstract: A display device and a bezel thereof are provided. The display device includes a display panel and a bezel. The display panel has a first surface and a second surface. The first surface includes at least one pixel pad section, and the second surface includes at least one circuit pad section. The bezel includes a first surface connecting portion, a second surface connecting portion and at least one conductive wire. The edge of the display panel having the pixel pad section and the circuit pad section is accommodated between the first surface connecting portion and the second surface connecting portion. Each conductive wire has a first end and a second end. The first end is disposed on the first surface connecting portion and the second end is disposed on the second surface connecting portion. The part of the first connecting portion having the first end corresponds to the pixel pad section, and the part of the second connecting portion having the second end corresponds to the circuit pad section.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: May 14, 2024
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Yi-Fan Chen, Che-Chia Chang, Shang-Jie Wu, Yu-Chieh Kuo, Yi-Jung Chen, Yu-Hsun Chiu, Mei-Yi Li, He-Yi Cheng
  • Patent number: 11925898
    Abstract: The present invention discloses a flue gas low-temperature adsorption denitrification method, including: pressurizing a flue gas that has been subjected to dust removal and desulfurization, precooling the pressurized flue gas, cooling the precooled flue gas to a temperature lower than room temperature by a flue gas cooling system, flowing the flue gas at the temperature lower than room temperature into a low-temperature denitrification system, performing physical adsorption denitrification in the low-temperature denitrification system, precooling the flue gas that has been subjected to dust removal and desulfurization with the denitrificated flue gas, and flowing the heat-absorbed clean flue gas into a chimney to be discharged.
    Type: Grant
    Filed: April 5, 2021
    Date of Patent: March 12, 2024
    Assignee: HUANENG CLEAN ENERGY RESEARCH INSTITUTE
    Inventors: Shiqing Wang, Qixiang Fan, Shisen Xu, Shiwang Gao, Shaomin Wang, He Zhao, Minhua Jiang, Ping Xiao, Bin Huang, Hongwei Niu, Jinyi Wang, Lianbo Liu
  • Publication number: 20240072472
    Abstract: A connector comprises an insulation housing, a shielding shell, an inner sheath, and an outer sheath. The shielding shell is sheathed on the insulation housing. The inner sheath is formed on the shielding shell by injection molding. The inner sheath includes a front end wrapped on the shielding shell and a retaining portion formed on the front end of the inner sheath and spaced from the shielding shell to form a gap therebetween. The outer sheath is formed on the shielding shell and the inner sheath by injection molding. The outer sheath includes an engaging portion embedded in the gap between the retaining portion and the shielding shell. The retaining portion holds the engaging portion on the shielding shell to prevent the formation of a gap between the front end of the outer sheath and the shielding shell.
    Type: Application
    Filed: August 29, 2023
    Publication date: February 29, 2024
    Applicants: SIBAS Electronics (Xiamen) Co. Ltd., Tyco Electronics (Shanghai) Co., Ltd.
    Inventors: Daokuan (Jeremy) Zhang, Weidong (Randy) Huang, Yong (Chris) Wang, Hua He, Xinzheng (Tony) Fan, Jianfei (Fencer) Yu
  • Patent number: 11119416
    Abstract: A method includes forming a first overlay feature in a first dielectric layer over a first wafer; forming a second dielectric layer over the first overlay feature and the first dielectric layer; forming an opening in the second dielectric layer by at least using an exposure tool; forming a second overlay feature in the opening of the second dielectric layer, such that a first edge of the first overlay feature is covered by the second dielectric layer; directing an electron beam to the first and second overlay features and the second dielectric layer; detecting the electron beam reflected from the first overlay feature through the second dielectric layer and from the second overlay feature by a detector; obtaining, by a controller, an overlay error between the first overlay feature and the second overlay feature according to the reflected electron beam electrically connected to the detector.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: September 14, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Che-Yuan Sun, Yen-Liang Chen, He Fan, Yen-Hung Chen, Kai Lin
  • Publication number: 20200057388
    Abstract: A method includes forming a first overlay feature in a first dielectric layer over a first wafer; forming a second dielectric layer over the first overlay feature and the first dielectric layer; forming an opening in the second dielectric layer by at least using an exposure tool; forming a second overlay feature in the opening of the second dielectric layer, such that a first edge of the first overlay feature is covered by the second dielectric layer; directing an electron beam to the first and second overlay features and the second dielectric layer; detecting the electron beam reflected from the first overlay feature through the second dielectric layer and from the second overlay feature by a detector; obtaining, by a controller, an overlay error between the first overlay feature and the second overlay feature according to the reflected electron beam electrically connected to the detector.
    Type: Application
    Filed: June 12, 2019
    Publication date: February 20, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Che-Yuan SUN, Yen-Liang CHEN, He FAN, Yen-Hung CHEN, Kai LIN