Patents by Inventor Headway Technologies, Inc.

Headway Technologies, Inc. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140315045
    Abstract: The use of supermalloy-like materials for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability.
    Type: Application
    Filed: April 18, 2013
    Publication date: October 23, 2014
    Applicant: Headway Technologies, Inc.
    Inventor: Headway Technologies, Inc.
  • Publication number: 20130140268
    Abstract: A TAMR (Thermally Assisted Magnetic Recording) write head is formed with a narrow pole tip, a trailing edge magnetic shield and, optionally, a plasmon shield. The narrow pole tipped write head uses the energy of laser generated edge plasmons, formed in a plasmon generating layer, to locally heat a PMR magnetic recording medium slightly below its Curie temperature, Tc. When combined with the effects of the narrow tip, this local heating to a temperature below Tc is sufficient to create good transitions and narrow track widths in the magnetic medium. The write head is capable of writing effectively on state-of-the-art PMR recording media having Hk of 20 kOe or more.
    Type: Application
    Filed: February 4, 2013
    Publication date: June 6, 2013
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventor: HEADWAY TECHNOLOGIES, INC.
  • Publication number: 20130088797
    Abstract: Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form.
    Type: Application
    Filed: December 2, 2012
    Publication date: April 11, 2013
    Applicant: Headway Technologies, Inc.
    Inventor: Headway Technologies, Inc.
  • Publication number: 20130089675
    Abstract: Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form.
    Type: Application
    Filed: December 1, 2012
    Publication date: April 11, 2013
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventor: HEADWAY TECHNOLOGIES, INC.