Abstract: An improved method for fabricating a capacitor capable of reducing defects introduced as a result of complicated processes required to separate the bottom electrodes of the capacitors is provided to thereby enhance the yield of the resulting semiconductor devices. The method comprises forming an insulating film on a substrate; selectively etching the insulating film to open regions for the formation of the bottom electrode; depositing a conductive layer on the substrate including the opened regions; forming a photoresist pattern; and then, preferably in a single etch chamber, completing the process by removing the conductive layer in the peripheral circuit region; etching back the photoresist pattern to expose the conductive layer in the cell region; etching back the conductive layer to form the bottom electrodes; and removing any residual photoresist.

Abstract: An improved method for fabricating a capacitor capable of reducing defects introduced as a result of complicated processes required to separate the bottom electrodes of the capacitors is provided to thereby enhance the yield of the resulting semiconductor devices. The method comprises forming an insulating film on a substrate; selectively etching the insulating film to open regions for the formation of the bottom electrode; depositing a conductive layer on the substrate including the opened regions; forming a photoresist pattern; and then, preferably in a single etch chamber, completing the process by removing the conductive layer in the peripheral circuit region; etching back the photoresist pattern to expose the conductive layer in the cell region; etching back the conductive layer to form the bottom electrodes; and removing any residual photoresist.