Patents by Inventor Heap Hoe Kuang

Heap Hoe Kuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of forming dam material with openings around semiconductor die for mold underfill using dispenser and vacuum assist
    Patent number: 8399305
    Abstract: A semiconductor wafer contains a plurality of semiconductor die separated by saw streets. A dam material is formed over the saw streets around each of the semiconductor die. A plurality of openings is formed in the dam material. The openings in the dam material can be formed on each side or corners of the first semiconductor die. The semiconductor wafer is singulated through the dam material to separate the semiconductor die. The semiconductor die is mounted to a substrate. A mold underfill is deposited through a first opening in the dam material. A vacuum is drawn on a second opening in the dam material to cause the underfill material to cover an area between the first semiconductor die and substrate without voids. The number of second openings can be greater than the number of first openings. The first opening can be larger than the second opening.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: March 19, 2013
    Assignee: STATS ChipPac, Ltd.
    Inventors: Rui Huang, Seng Guan Chow, Heap Hoe Kuang
  • Semiconductor Device and Method of Forming Dam Material With Openings Around Semiconductor Die for Mold Underfill Using Dispenser and Vacuum Assist
    Publication number: 20120068353
    Abstract: A semiconductor wafer contains a plurality of semiconductor die separated by saw streets. A dam material is formed over the saw streets around each of the semiconductor die. A plurality of openings is formed in the dam material. The openings in the dam material can be formed on each side or corners of the first semiconductor die. The semiconductor wafer is singulated through the dam material to separate the semiconductor die. The semiconductor die is mounted to a substrate. A mold underfill is deposited through a first opening in the dam material. A vacuum is drawn on a second opening in the dam material to cause the underfill material to cover an area between the first semiconductor die and substrate without voids. The number of second openings can be greater than the number of first openings. The first opening can be larger than the second opening.
    Type: Application
    Filed: September 20, 2010
    Publication date: March 22, 2012
    Applicant: STATS ChipPAC, Ltd.
    Inventors: Rui Huang, Seng Guan Chow, Heap Hoe Kuang