Patents by Inventor Hee-Bom Kim
Hee-Bom Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11281093Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.Type: GrantFiled: June 9, 2021Date of Patent: March 22, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Hoon Na, Dong Gun Lee, Hee Bom Kim
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Publication number: 20210302828Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.Type: ApplicationFiled: June 9, 2021Publication date: September 30, 2021Inventors: Ji Hoon Na, Dong Gun Lee, Hee Bom Kim
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Patent number: 11067887Abstract: A method of manufacturing a pellicle includes preparing a pellicle frame having an adhesive layer coated thereon, treating a pellicle membrane with vapor under vapor atmosphere, attaching the pellicle membrane onto the pellicle frame, and drying the pellicle membrane.Type: GrantFiled: July 1, 2020Date of Patent: July 20, 2021Assignees: SAMSUNG ELECTRONICS CO., LTD., Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Mun-Ja Kim, Ji-Beom Yoo, Soo-Young Kim, Hee-Bom Kim, Hwan-Chul Jeon, Seul-Gi Kim, Tae-Sung Kim, Dong-Wook Shin
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Patent number: 11061322Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.Type: GrantFiled: August 28, 2018Date of Patent: July 13, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Hoon Na, Dong Gun Lee, Hee Bom Kim
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Publication number: 20200333701Abstract: A method of manufacturing a pellicle includes preparing a pellicle frame having an adhesive layer coated thereon, treating a pellicle membrane with vapor under vapor atmosphere, attaching the pellicle membrane onto the pellicle frame, and drying the pellicle membrane.Type: ApplicationFiled: July 1, 2020Publication date: October 22, 2020Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Mun-Ja KIM, Ji-Beom YOO, Soo-Young KIM, Hee-Bom KIM, Hwan-Chul JEON, Seul-Gi KIM, Tae-Sung KIM, Dong-Wook SHIN
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Patent number: 10747104Abstract: A method of manufacturing a pellicle includes preparing a pellicle frame having an adhesive layer coated thereon, treating a pellicle membrane with vapor under vapor atmosphere, attaching the pellicle membrane onto the pellicle frame, and drying the pellicle membrane.Type: GrantFiled: August 30, 2017Date of Patent: August 18, 2020Assignees: SAMSUNG ELECTRONICS CO., LTD., Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Mun-Ja Kim, Ji-Beom Yoo, Soo-Young Kim, Hee-Bom Kim, Hwan-Chul Jeon, Seul-Gi Kim, Tae-Sung Kim, Dong-Wook Shin
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Patent number: 10437143Abstract: Provided is a pellicle for exposure to extreme ultraviolet light (EUVL) according to an example embodiment, and the pellicle includes a pellicle membrane; and a frame attached to the pellicle membrane, wherein the pellicle membrane includes a carbon-based main layer that has a first surface and a second surface, which are two surfaces opposite to each other; and a boron-based enhancement layer covering at least one surface selected from the first surface and the second surface. The pellicle according to an example embodiment may be used for an extended period of time in an extreme ultraviolet light exposure environment.Type: GrantFiled: June 20, 2017Date of Patent: October 8, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Hwan-chul Jeon, Mun Ja Kim, Sung-won Kwon, Hee-bom Kim, Chang-young Jeong
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Publication number: 20190235387Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.Type: ApplicationFiled: August 28, 2018Publication date: August 1, 2019Inventors: Ji Hoon Na, Dong Gun Lee, Hee Bom Kim
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Publication number: 20180284599Abstract: Provided is a pellicle for exposure to extreme ultraviolet light (EUVL) according to an example embodiment, and the pellicle includes a pellicle membrane; and a frame attached to the pellicle membrane, wherein the pellicle membrane includes a carbon-based main layer that has a first surface and a second surface, which are two surfaces opposite to each other; and a boron-based enhancement layer covering at least one surface selected from the first surface and the second surface. The pellicle according to an example embodiment may be used for an extended period of time in an extreme ultraviolet light exposure environment.Type: ApplicationFiled: June 20, 2017Publication date: October 4, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Hwan-chul JEON, Mun Ja KIM, Sung-won KWON, Hee-bom KIM, Chang-young JEONG
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Publication number: 20180275508Abstract: A method of manufacturing a pellicle includes preparing a pellicle frame having an adhesive layer coated thereon, treating a pellicle membrane with vapor under vapor atmosphere, attaching the pellicle membrane onto the pellicle frame, and drying the pellicle membrane.Type: ApplicationFiled: August 30, 2017Publication date: September 27, 2018Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITYInventors: Mun-Ja KIM, Ji-Beom YOO, Soo-Young KIM, Hee-Bom KIM, Hwan-Chul JEON, Seul-Gi KIM, Tae-Sung KIM, Dong-Wook SHIN
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Patent number: 8673522Abstract: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.Type: GrantFiled: August 9, 2012Date of Patent: March 18, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Choi, Byung-Gook Kim, Hee-Bom Kim, Sang-Hee Lee
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Patent number: 8522172Abstract: A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.Type: GrantFiled: September 22, 2011Date of Patent: August 27, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Young-keun Yoon, Hee-bom Kim, Myoung-soo Lee, Chan-uk Jeon, Hak-seung Han
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Patent number: 8475980Abstract: A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.Type: GrantFiled: August 26, 2011Date of Patent: July 2, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Choi, Byung-gook Kim, Hee-bom Kim, Sang-hee Lee
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Publication number: 20130143150Abstract: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.Type: ApplicationFiled: August 9, 2012Publication date: June 6, 2013Inventors: JIN CHOI, Byung-Gook Kim, Hee-Bom Kim, Sang-Hee Lee
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Publication number: 20120314198Abstract: In a method of estimating a PSF in the electron-beam lithography process, a linear resist test pattern may be formed on a substrate. A line response function (LRF) may be determined using a cross-sectional profile of the linear resist test pattern. A development rate distribution in a first direction, the first direction may be substantially perpendicular to an extending direction of the linear resist test pattern, may be calculated using the LRF. A line spread function (LSF), which may represent an exposure distribution in the first direction, may be calculated using the development rate distribution. The PSF may be estimated using the LSF.Type: ApplicationFiled: June 1, 2012Publication date: December 13, 2012Inventors: Sang-Hee Lee, Byung-Gook Kim, Hee-Bom Kim, Soo-Young Lee, Qing Dai
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Patent number: 8329381Abstract: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.Type: GrantFiled: February 17, 2012Date of Patent: December 11, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Choi, Byung-Gook Kim, Hee-Bom Kim, Sang-Hee Lee
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Patent number: 8213722Abstract: A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.Type: GrantFiled: October 28, 2009Date of Patent: July 3, 2012Assignee: SAmsung Electronics Co., Ltd.Inventors: Hee-Bom Kim, Myoung-Soo Lee, Young-Su Sung
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Publication number: 20120159405Abstract: A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.Type: ApplicationFiled: September 22, 2011Publication date: June 21, 2012Inventors: Young-keun YOON, Hee-bom Kim, Myoung-soo Lee, Chan-uk Jeon, Hak-seung Han
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Publication number: 20120148959Abstract: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.Type: ApplicationFiled: February 17, 2012Publication date: June 14, 2012Inventors: Jin CHOI, Byung-Gook Kim, Hee-Bom Kim, Sang-Hee Lee
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Patent number: 8137870Abstract: A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.Type: GrantFiled: March 26, 2009Date of Patent: March 20, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Myoung-soo Lee, Young-su Sung, Hee-bom Kim, Min-kyung Lee, Dong-gun Lee