Patents by Inventor Hee-Cheol Jeong

Hee-Cheol Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6297097
    Abstract: A semiconductor memory device and a method for manufacturing a semiconductor memory device for increasing the coupling ratio are disclosed. In the memory device, a tunneling insulating film is formed on a semiconductor substrate. A floating gate is formed on the tunneling insulating film. A dielectric layer is formed on the surface of the floating gate. A control gate having a predetermined shape is formed on the dielectric layer. The capacitance between the control gate and the floating gate is increased, enlarging the coupling ratio. As a result, the power consumption can be reduced and the access time can be decreased.
    Type: Grant
    Filed: December 8, 1998
    Date of Patent: October 2, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Hee-Cheol Jeong
  • Publication number: 20010009289
    Abstract: A flash memory device and fabrication method simplify the fabrication process of a semiconductor EEPROM device through a self-aligning process. The device includes a semiconductor substrate in which source and drain regions are defined, a first insulation layer formed on the semiconductor substrate, a first conductive layer pattern formed on a portion of the first insulation layer, sidewall spacers formed of a second conductive layer neighboring each sidewall of the first conductive layer pattern and covered by second and third insulation layers, and a third conductive layer pattern formed on the insulation layers and connected with the first conductive layer pattern.
    Type: Application
    Filed: March 6, 2001
    Publication date: July 26, 2001
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventor: Hee-Cheol Jeong
  • Patent number: 6187636
    Abstract: A flash memory device and fabrication method simplify the fabrication process of a semiconductor EEPROM device through a self-aligning process. The device includes a semiconductor substrate in which source and drain regions are defined, a first insulation layer formed on the semiconductor substrate, a first conductive layer pattern formed on a portion of the first insulation layer, sidewall spacers formed of a second conductive layer neighboring each sidewall of the first conductive layer pattern and covered by second and third insulation layers, and a third conductive layer pattern formed on the insulation layers and connected with the first conductive layer pattern.
    Type: Grant
    Filed: February 9, 1998
    Date of Patent: February 13, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Hee-Cheol Jeong
  • Patent number: 6093604
    Abstract: A memory device and a method of manufacturing the same in accordance with the present invention has an improved writing and erasing efficiency and an improved reliability. The memory device includes a first conductivity type substrate having second conductivity type source and drain regions spaced apart from each other. A source electrode having a T-shaped rail structure is formed in contact with the source region, and a drain electrode having a T-shaped rail structure is formed in contact with the drain region. An I-shaped floating gate is formed on the substrate between the source electrode and the drain electrode with a control gate formed on the floating gate.
    Type: Grant
    Filed: February 20, 1998
    Date of Patent: July 25, 2000
    Assignee: LG Semicon Co., Ltd.
    Inventor: Hee Cheol Jeong
  • Patent number: 5886379
    Abstract: A semiconductor memory device and a method for manufacturing a semiconductor memory device for increasing the coupling ratio are disclosed. In the memory device, a tunneling insulating film is formed on a semiconductor substrate. A floating gate is formed on the tunneling insulating film. A dielectric layer is formed on the surface of the floating gate. A control gate having a predetermined shape is formed on the dielectric layer. The capacitance between the control gate and the floating gate is increased, enlarging the coupling ratio. As a result, the power consumption can be reduced and the access time can be decreased.
    Type: Grant
    Filed: January 27, 1997
    Date of Patent: March 23, 1999
    Assignee: LG Semicon Co., Ltd.
    Inventor: Hee-Cheol Jeong
  • Patent number: 5763913
    Abstract: A memory device and a method of manufacturing the same in accordance with the present invention has an improved writing and erasing efficiency and an improved reliability. The memory device includes a first conductivity type substrate having second conductivity type source and drain regions spaced apart from each other. A source electrode having a T-shaped rail structure is formed in contact with the source region, and a drain electrode having a T-shaped rail structure is formed in contact with the drain region. An I-shaped floating gate is formed on the substrate between the source electrode and the drain electrode with a control gate formed on the floating gate.
    Type: Grant
    Filed: March 5, 1997
    Date of Patent: June 9, 1998
    Assignee: LG Semicon Co., Ltd.
    Inventor: Hee Cheol Jeong