Abstract: Provided is an electronic apparatus comprising a main body and a kit connected to the main body, wherein the main body comprises a battery, a first motor, an electric wire connected to the battery and a first controller connected to the electric wire, wherein the kit comprises a second motor supplied with power through the electric wire and a second controller connected to the electric wire, wherein the first controller comprises a first signal generator configured to generate a signal to be transmitted to the kit and a first modulator configured to modulate the signal generated by the first signal generator, and wherein the signal modulated by the first modulator is transmitted to the second controller through the electric wire.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: A display device includes: a substrate; a display element on the substrate; a capping layer on the display element; and a thin film encapsulation layer on the capping layer, wherein the capping layer includes: a first capping layer on the display element; a second capping layer on the first capping layer, the second capping layer having a refractive index greater than that of the first capping layer; and a third capping layer on the second capping layer, the third capping layer having a refractive index smaller than that of the second capping layer, wherein the second capping layer has a thickness of 30 nanometers (nm) to 60 nm.

Abstract: Provided is a display device comprising a substrate, a first data line and a second data line disposed on the substrate and extended in a first direction, an anode electrode disposed on the first data line and the second data line, a pixel-defining film disposed over the anode electrode and defining an emission area, an organic light-emitting layer disposed on the anode electrode, and a cathode electrode disposed on the organic light-emitting layer, wherein each of the first data line and the second data line has a curved shape when viewed from a top where the first anode electrode and the second anode electrode overlap the anode electrode.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: A display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. A capping layer is disposed on the common electrode. An auxiliary layer is disposed on the capping layer. A thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. The auxiliary layer has a thickness of 200 ? to 1400 ?, the first inorganic insulating layer has a thickness of 400 ? to 3500 ?, the second inorganic insulating layer has a thickness of 200 ? to 2400 ?, and the third inorganic insulating layer has a thickness of 4000 ? or more.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The disclosure provides a memory device which includes a plurality of word lines grouped into a plurality of WL sets; and a plurality of redundant word lines grouped into M RWL sets; and a memory control circuit connected to the WL sets and the RWL sets and configured to replace a plurality of defective WL sets of the plurality WL sets by selecting from the RWL sets, wherein each of the plurality of defective WL sets comprises at least a defective word line, all of the M RWL sets are available for repairing the WL sets during a wafer stage, where M is an integer greater than 2, and N of M RWL sets is available for repairing the WL sets during the wafer stage, during a package stage and during a post package stage, where N is an integer less than M.

Abstract: The disclosure provides a memory device which includes a plurality of word lines grouped into a plurality of WL sets; and a plurality of redundant word lines grouped into M RWL sets; and a memory control circuit connected to the WL sets and the RWL sets and configured to replace a plurality of defective WL sets of the plurality WL sets by selecting from the RWL sets, wherein each of the plurality of defective WL sets comprises at least a defective word line, all of the M RWL sets are available for repairing the WL sets during a wafer stage, where M is an integer greater than 2, and N of M RWL sets is available for repairing the WL sets during the wafer stage, during a package stage and during a post package stage, where N is an integer less than M.

Abstract: A semiconductor device including an operation control signal generation circuit configured for generating an operation control signal for a target word line. The semiconductor device including a copy operation circuit configured for performing a first copy operation of storing data of first cells coupled to an adjacent word line adjacent to the target word line, in second cells coupled to a first clone word line, based on the operation control signal.

Abstract: A memory device may include: a plurality of memory cells; at least one address storage unit; a fail detection unit suitable for comparing first and second read data that are read from at least one memory cell selected among the plurality of memory cells to detect a fail, and storing an address of the selected memory cell in the address storage unit when the fail is detected; and a refresh control unit suitable for refreshing the memory cell corresponding to the address stored in the address storage unit at a higher frequency than the other memory cells.

Abstract: A semiconductor device, semiconductor system, and or method relating to a refresh operation may be provided. The semiconductor device may include an operation control signal generation circuit configured for generating an operation control signal for a target word line. The semiconductor device may include a copy operation circuit configured for performing a first copy operation of storing data of first cells coupled to an adjacent word line adjacent to the target word line, in second cells coupled to a first clone word line, based on the operation control signal.

Abstract: A memory device includes a plurality of memory cells; a nonvolatile memory block suitable for simultaneously sensing one or more programmed weak addresses, and sequentially transmitting the sensed weak addresses; a weak address control block suitable for latching the weak addresses transmitted from the nonvolatile memory block, and outputting sequentially the latched weak addresses in a weak refresh operation; and a refresh control block suitable for controlling the memory cells corresponding to the counting address to be refreshed, in a normal refresh operation, and controlling the memory cells corresponding to the weak address to be refreshed, in the weak refresh operation.

Abstract: A memory device may include: a plurality of memory cells; at least one address storage unit; a fail detection unit suitable for comparing first and second read data that are read from at least one memory cell selected among the plurality of memory cells to detect a fail, and storing an address of the selected memory cell in the address storage unit when the fail is detected; and a refresh control unit suitable for refreshing the memory cell corresponding to the address stored in the address storage unit at a higher frequency than the other memory cells.

Abstract: Disclosed herein is a method for handover of a mobile terminal. In the method, a group of mobile terminals for handover is formed by grouping a plurality of mobile terminals. A first terminal of the group scans a target base station. One or more other terminals of the group perform handover to the target base station using the scan information of the first terminal.

Abstract: In accordance with an embodiment of the present invention, control device and method are disclosed for reducing unnecessary data backup and restoring operations and increasing data read and write speed in a flash memory. The method includes writing data received from the host system to the flash memory; moving valid data in the basic block to the first link block when a use ratio of the first link block is greater than a reference value; and moving valid data in the first link block to the second link block when a use ratio of the first link block is less than the reference value.

Abstract: In accordance with an embodiment of the present invention, control device and method are disclosed for reducing unnecessary data backup and restoring operations and increasing data read and write speed in a flash memory. The method includes writing data received from the host system to the flash memory; moving valid data in the basic block to the first link block when a use ratio of the first link block is greater than a reference value; and moving valid data in the first link block to the second link block when a use ratio of the first link block is less than the reference value.