Patents by Inventor Hee Wang YANG

Hee Wang YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11508937
    Abstract: Provided is a light-diffusing barrier film. The film is an integral film comprising a barrier layer, a base layer and a light-diffusing layer, sequentially. The film can prevent moisture penetration into a device such as an organic light emitting device, and also imparts a light-diffusing function to the device. In particular, the film can have excellent moisture blocking properties even after a roll-to-roll process.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: November 22, 2022
    Assignee: LG CHEM, LTD.
    Inventors: Hee Joon Jeong, Jang Yeon Hwang, Bo Ra Park, Sung Jin Shin, Hee Wang Yang
  • Patent number: 11458703
    Abstract: Provided is a barrier film that includes a base layer (A), and a barrier layer (B) located on one side of the base layer and including one or more cured layers of polysilazane layers having a surface (S) of a concavo-convex structure formed by protruding particles, the barrier film having excellent barrier properties against the external environment, and excellent optical properties. The barrier film can be used for an electronic product sensitive to moisture.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: October 4, 2022
    Assignee: LG CHEM, LTD.
    Inventors: Hee Joon Jeong, Jang Yeon Hwang, Bo Ra Park, Sung Jin Shin, Hee Wang Yang
  • Publication number: 20220064395
    Abstract: Provided is a barrier film, comprising: a base layer; and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, the first region has a thickness of 50 nm or more, and the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less, the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like.
    Type: Application
    Filed: October 22, 2019
    Publication date: March 3, 2022
    Inventors: Sung Jin SHIN, Jang Yeon HWANG, Hee Joon JEONG, Bo Ra PARK, Hee Wang YANG
  • Publication number: 20210387855
    Abstract: Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10?3 g/m2·day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.
    Type: Application
    Filed: October 22, 2019
    Publication date: December 16, 2021
    Inventors: Sung Jin SHIN, Jang Yeon HWANG, Hee Joon JEONG, Bo Ra PARK, Hee Wang YANG
  • Publication number: 20210381109
    Abstract: Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10?4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.
    Type: Application
    Filed: October 22, 2019
    Publication date: December 9, 2021
    Inventors: Sung Jin SHIN, Jang Yeon HWANG, Hee Joon JEONG, Bo Ra PARK, Hee Wang YANG
  • Publication number: 20210340345
    Abstract: Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.
    Type: Application
    Filed: October 22, 2019
    Publication date: November 4, 2021
    Inventors: Sung Jin SHIN, Jang Yeon HWANG, Hee Joon JEONG, Bo Ra PARK, Hee Wang YANG
  • Publication number: 20210114331
    Abstract: Provided is a barrier film that includes a base layer (A), and a barrier layer (B) located on one side of the base layer and including one or more cured layers of polysilazane layers having a surface (S) of a concavo-convex structure formed by protruding particles, the barrier film having excellent barrier properties against the external environment, and excellent optical properties. The barrier film can be used for an electronic product sensitive to moisture etc.
    Type: Application
    Filed: November 28, 2018
    Publication date: April 22, 2021
    Inventors: Hee Joon JEONG, Jang Yeon HWANG, Bo Ra PARK, Sung Jin SHIN, Hee Wang YANG
  • Publication number: 20210119179
    Abstract: Provided is a light-diffusing barrier film. The film is an integral film comprising a barrier layer, a base layer and a light-diffusing layer, sequentially. The film can prevent moisture penetration into a device such as an organic light emitting device, and also imparts a light-diffusing function to the device. In particular, the film can have excellent moisture blocking properties even after a roll-to-roll process.
    Type: Application
    Filed: April 17, 2019
    Publication date: April 22, 2021
    Inventors: Hee Joon JEONG, Jang Yeon HWANG, Bo Ra PARK, Sung Jin SHIN, Hee Wang YANG
  • Patent number: 10654070
    Abstract: The present application relates to a method for preparing a barrier film. The present application can provide a method for preparing a barrier film having excellent barrier characteristics and optical performances. The barrier film produced by the method of the present application can be effectively used not only for packaging materials of as foods or medicines, and the like, but also for various applications, such as members for FPDs (flat panel displays) such as LCDs (Liquid Crystal Displays) or solar cells, substrates for electronic papers or OLEDs (Organic Light Emitting Diodes), or sealing films.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: May 19, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Hee Wang Yang, Jang Yeon Hwang, Seong Hwan Lee
  • Publication number: 20180243789
    Abstract: The present application relates to a method for preparing a barrier film. The present application can provide a method for preparing a barrier film having excellent barrier characteristics and optical performances. The barrier film produced by the method of the present application can be effectively used not only for packaging materials of as foods or medicines, and the like, but also for various applications, such as members for FPDs (flat panel displays) such as LCDs (Liquid Crystal Displays) or solar cells, substrates for electronic papers or OLEDs (Organic Light Emitting Diodes), or sealing films.
    Type: Application
    Filed: March 31, 2017
    Publication date: August 30, 2018
    Inventors: Hee Wang YANG, Jang Yeon HWANG, Seong Hwan LEE