Abstract: An organic light emitting display device includes a substrate having a sub-pixel area and a pad area, a light shielding layer in the sub-pixel area, a thin film transistor on the light shielding layer in the sub-pixel area, a light emitting diode connected to the thin film transistor, a lower pad electrode in the pad area, a first insulating layer covering the lower pad electrode to expose a portion of the lower pad electrode, an upper pad electrode connected to the lower pad electrode, and a second insulating layer between the first insulating layer and the upper pad electrode, the second insulating layer overlapping the upper pad electrode so that an end portion of the second insulating layer coincides with an end portion of the upper pad electrode.

Abstract: An organic light emitting display device includes a substrate having a sub-pixel area and a pad area, a light shielding layer in the sub-pixel area, a thin film transistor on the light shielding layer in the sub-pixel area, a light emitting diode connected to the thin film transistor, a lower pad electrode in the pad area, a first insulating layer covering the lower pad electrode to expose a portion of the lower pad electrode, an upper pad electrode connected to the lower pad electrode, and a second insulating layer between the first insulating layer and the upper pad electrode, the second insulating layer overlapping the upper pad electrode so that an end portion of the second insulating layer coincides with an end portion of the upper pad electrode.

Abstract: An array substrate for an FFS mode LCD device includes a gate line and a gate pad electrode on a substrate; a common line parallel to the gate line; a data line extending along a second direction in a display area and a data pad electrode disposing in a non-display area; a thin film transistor electrically connected to the gate and data lines; a first passivation layer covering the thin film transistor and the data line; a second passivation layer on the first passivation layer and having a first thickness in the display area and a second thickness in the non-display area; a common electrode on the second passivation layer and connected to the common line; a third passivation layer on the common electrode; and a pixel electrode, a gate auxiliary pad electrode and a data auxiliary pad electrode on the third passivation layer.

Abstract: The present invention relates to methods for fabricating a thin film transistor substrate.

Abstract: Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Abstract: Disclosed are a thin film transistor substrate and a method of fabricating the same in which the number of processes is reduced. The method includes forming a first conductive pattern including gate electrodes and gate lines on a substrate through a first mask process, depositing a gate insulating film and forming a second conductive pattern including a semiconductor pattern, source and drain electrodes and data lines through a second mask process, depositing first and second passivation films and forming pixel contact holes passing through the first and second passivation films and exposing the drain electrodes through a third mask process, and forming a third conductive pattern including a common electrode and a common line and forming a third passivation film formed in an undercut structure with the common electrode through a fourth mask process, simultaneously, and forming a fourth conductive pattern including pixel electrodes through a lift-off process.

Abstract: An array substrate for an FFS mode LCD device includes a gate line and a gate pad electrode on a substrate; a common line parallel to the gate line; a data line extending along a second direction in a display area and a data pad electrode disposing in a non-display area; a thin film transistor electrically connected to the gate and data lines; a first passivation layer covering the thin film transistor and the data line; a second passivation layer on the first passivation layer and having a first thickness in the display area and a second thickness in the non-display area; a common electrode on the second passivation layer and connected to the common line; a third passivation layer on the common electrode; and a pixel electrode, a gate auxiliary pad electrode and a data auxiliary pad electrode on the third passivation layer.

Abstract: The present invention relates to methods for fabricating a thin film transistor substrate.

Abstract: The present invention relates to a thin film transistor substrate and a method for fabricating the same which can reduce a number of steps.

Abstract: An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes.

Abstract: A method of lifting off includes forming a first material layer on a substrate; forming a photoresist pattern including first and second holes and on the first material layer; patterning the first material layer using the photoresist pattern as a patterning mask to form a material pattern having first and second grooves within the material pattern, the first and second grooves corresponding to the first and second holes, respectively; forming a second material layer on an entire surface of the substrate including the photoresist pattern and the first and second grooves; and removing the photoresist pattern and the second material layer on the photoresist pattern at the same time, wherein a portion of the material pattern between the first and second grooves and portions of the material pattern at sides of the first and second grooves constitute a line as a whole.

Abstract: Disclosed are a thin film transistor substrate and a method of fabricating the same in which the number of processes is reduced. The method includes forming a first conductive pattern including gate electrodes and gate lines on a substrate through a first mask process, depositing a gate insulating film and forming a second conductive pattern including a semiconductor pattern, source and drain electrodes and data lines through a second mask process, depositing first and second passivation films and forming pixel contact holes passing through the first and second passivation films and exposing the drain electrodes through a third mask process, and forming a third conductive pattern including a common electrode and a common line and forming a third passivation film formed in an undercut structure with the common electrode through a fourth mask process, simultaneously, and forming a fourth conductive pattern including pixel electrodes through a lift-off process.

Abstract: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged in the pixel region, a second common electrode overlapping the data line and interposed between a gate insulation film and a protective film, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film, the organic insulation film, and the gate insulation film, and has inclined surfaces connected to the surface of the substrate.

Abstract: A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further comprises depositing a plurality of ions from the plasma on the substrate.

Abstract: The present invention relates to a thin film transistor substrate and a method for fabricating the same which can reduce a number of steps.

Abstract: A thin film transistor array substrate includes a gate line provided on a substrate, a data line crossing the gate line to define a pixel area, a gate insulating film between the gate line and the data line at the crossing of the gate line and data line, a thin film transistor adjacent to the crossing of the gate line and the data line, a protective film covering the thin film transistor, a pixel electrode on the pixel area and electrically connected to a drain electrode of the thin film transistor, a gate pad connected to the gate line, a data pad connected to the data line, a lower data link electrode connected to the data line, an upper data link electrode connected to the data line and overlapping one end of the lower data link electrode, and a link electrode connecting the lower data link electrode via a first contact hole passing through the protective film and the gate insulating film at a first area of the substrate in which the protective film is directly provided on the gate insulating film.

Abstract: A liquid crystal display device includes a first substrate, a second substrate and a liquid crystal layer between the first and second substrates. The liquid crystal display device further includes a gate line on the first substrate, a first insulation film on the gate line, a data line crossing the gate line such that the data line and the gate line define a pixel region with a transmission area and a reflection area, a thin film transistor connected to the gate line and the data line, a storage capacitor including a storage line crossing the data line and an upper storage electrode connected to the thin film transistor, a second insulation film on the thin film transistor with a transmission hole defined through the second insulation film, a reflection electrode disposed on the second insulation film in the reflection area and connected to a portion of the upper storage electrode through the transmission hole, and a pixel electrode disposed in the pixel region and connected to the reflection electrode.

Abstract: An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes.

Abstract: A method of fabricating an LCD device includes forming a gate line, a gate electrode, a gate pad electrode at an end of the gate line, and a common line on a substrate; forming a gate insulating layer on the gate electrode; forming an active layer on the gate insulating layer; forming an etch stopper on the active layer; forming first and second ohmic contact layers spaced apart from each other on the active layer and an impurity-doped amorphous silicon pattern contacting the gate insulating layer therebelow, outer sides of the first and second ohmic contact layers being outside the active layer; forming a data line crossing the gate line to define a pixel region, a data pad electrode at an end of the data line, and source and drain electrodes on the first and second ohmic contact layers, respectively; forming a pixel electrode and a common electrode in the pixel region to induce an in-plane electric field; and forming a gate pad terminal electrode on the gate pad electrode.

Abstract: A method for fabricating a liquid crystal display includes: providing an array substrate and a color filter substrate facing the array substrate; forming a gate electrode and a gate line formed of a first conductive film on the array substrate through a first masking process; forming a second conductive film pattern at an upper portion of the gate electrode, a storage capacitor preliminary pattern at a partial upper region of the gate electrode and a data line substantially crossing the gate line to define a pixel region, the second conductive film pattern, the storage capacitor preliminary pattern and the data line being formed of a second conductive film through a second masking process; forming an opaque insulation film surrounding the data line; forming a transparent third conductive film on the entire surface of the array substrate with the opaque insulation film interposed therebetween; patterning the second conductive film pattern and a third conductive film through a third masking process to form a so