Patents by Inventor Heeseok Eun
Heeseok Eun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8587997Abstract: Provided are a memory system and an operating method thereof. The operating method reads an observation memory cell at least one time with different read voltages to configure a first read data symbol, reads a plurality of interference memory cells adjacent to the observation memory cell at least one time with different read voltages to configure second read data symbols, and determines a logical value of the observation memory cell based on the first read data symbol and the second read data symbols.Type: GrantFiled: January 28, 2011Date of Patent: November 19, 2013Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Jaehong Kim, Kijun Lee, Yong June Kim, Heeseok Eun
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Patent number: 8503230Abstract: Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.Type: GrantFiled: October 19, 2009Date of Patent: August 6, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Han Woong Yoo, KyoungLae Cho, Seung-Hwan Song, Heeseok Eun, Hong Rak Son
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Patent number: 8427870Abstract: Provided is a method for operating a nonvolatile memory device. In the method, read data is read by means of a read level and logic values for erasure-decoding the read data are set. The bits of the read data corresponding to the range of the set logic values is set as erasure bits, and an erasure decoding operation is performed.Type: GrantFiled: February 16, 2010Date of Patent: April 23, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yong June Kim, Jaehong Kim, Heeseok Eun
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Patent number: 8422291Abstract: The storage device includes a storage unit configured to store data, an error controlling unit configured to correct an error of the data read out from the storage unit according to at least one read level, and a read level controlling unit configured to control the at least one read level when the error is uncorrectable. The read level controlling unit is configured to measure a distribution of memory cells of the storage unit, configured to filter the measured distribution, and configured to reset the at least one read level based on the filtered distribution.Type: GrantFiled: April 12, 2010Date of Patent: April 16, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yong June Kim, Heeseok Eun, Han Woong Yoo, Jaehong Kim, Hong Rak Son
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Patent number: 8331144Abstract: Disclosed is a program method of a non-volatile memory device which comprises classifying plural memory cells into aggressor cells and victim cells based on program data to be written in the plural memory cells; and programming the aggressor cells by a program manner different from the victim cells.Type: GrantFiled: October 8, 2009Date of Patent: December 11, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Han Woong Yoo, Seung-Hwan Song, Junjin Kong, Heeseok Eun
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Patent number: 8279668Abstract: A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.Type: GrantFiled: June 14, 2010Date of Patent: October 2, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Kyoung Lae Cho, Yoon Dong Park, Jun Jin Kong, Jong Han Kim, Jae Hong Kim, Young Hwan Lee, Heeseok Eun, Seung-Hwan Song
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Patent number: 8230157Abstract: Memory devices and multi-bit programming methods are provided. A memory device may include a plurality of memory units; a data separator that separates data into a plurality of groups; a selector that rotates each of the plurality of groups and transmits each of the groups to at least one of the plurality of memory units. The plurality of memory units may include page buffers that may program the transmitted group in a plurality of multi-bit cell arrays using a different order of a page programming operation. Through this, evenly reliable data pages may be generated.Type: GrantFiled: June 6, 2008Date of Patent: July 24, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jaehong Kim, Kyoung Lae Cho, Jun Jin Kong, Heeseok Eun, Seung-Hwan Song
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Patent number: 8200607Abstract: Disclosed are a memory device and a data decision method. The memory device may include a memory cell array, and a decision unit configured to read first data from the memory cell array via a first channel, perform at least one of a hard and soft decision on the first data using a first number of decision levels set based on characteristics of the first channel, read second data from the memory cell array via a second channel, and perform a soft decision on the second data using a second number of decision levels set based on characteristics of the second channel.Type: GrantFiled: November 20, 2008Date of Patent: June 12, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Hong Kim, Heeseok Eun, Yong June Kim, Jun Jin Kong, Seung-Hwan Song
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Patent number: 8171382Abstract: An encoding system for encoding error control codes may include a first encoder configured to encode an input bit stream to generate first bit streams of C-bits, where c is an integer greater than zero, and a second encoder may be configured to receive the first bit streams and shuffle data of the received first bit streams to generate second bit streams. The data shuffling of the first bit streams may adjust an error distribution of the second bit streams. An encoding method may include encoding an input bit stream to generate first bit streams of C-bits, and receiving the first bit streams and shuffling data of the received first bit streams to generate second bit streams. An error distribution of the second bit streams may be adjusted based on the data shuffling.Type: GrantFiled: April 29, 2008Date of Patent: May 1, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Heeseok Eun, Jae Hong Kim, Sung Chung Park
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Publication number: 20110310673Abstract: A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.Type: ApplicationFiled: June 16, 2011Publication date: December 22, 2011Applicant: Samsung Electronics Co., LtdInventors: Kyoung Law CHO, Heeseok EUN, Junjin KONG
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Publication number: 20110216598Abstract: Provided are a memory system and an operating method thereof. The operating method reads an observation memory cell at least one time with different read voltages to configure a first read data symbol, reads a plurality of interference memory cells adjacent to the observation memory cell at least one time with different read voltages to configure second read data symbols, and determines a logical value of the observation memory cell based on the first read data symbol and the second read data symbols.Type: ApplicationFiled: January 28, 2011Publication date: September 8, 2011Applicant: Samsung Electronics Co., LtdInventors: Jaehong KIM, Kijun Lee, Yong June Kim, Heeseok Eun
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Patent number: 8004886Abstract: Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may comprise: a multi-bit cell array that includes a first multi-bit cell and a second multi-bit cell; a programming unit for programming first data in the first multi-bit cell, and programming second data in the second multi-bit cell; and a verification unit for verifying whether the first data is programmed in the first multi-bit cell using a first verification voltage, and verifying whether the second data is programmed in the second multi-bit cell using a second verification voltage. The multi-bit programming apparatus may generate better threshold voltage distributions in a multi-bit cell memory.Type: GrantFiled: February 29, 2008Date of Patent: August 23, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Hwan Song, Kyoung Lae Cho, Heeseok Eun, Dong Hyuk Chae, Jun Jin Kong, Sung Chung Park
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Patent number: 7983082Abstract: A multi-bit programming apparatus may include a first control unit that may generates 2N threshold voltage states based on a target bit error rate (BER) of each of the page programming operations, a second control unit that may assign any one of the threshold voltage states to the N-bit data, and a programming unit that may program the assigned threshold voltage state in each of the at least one multi-bit cell to program the N-bit data.Type: GrantFiled: April 16, 2008Date of Patent: July 19, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Chung Park, Heeseok Eun, Seung-Hwan Song, Jun Jin Kong, Dong Hyuk Chae
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Patent number: 7911848Abstract: A memory device and a memory data determination method are provided. The memory device may estimate a threshold voltage shift of a first memory cell based on data before the first memory cell is programmed and a target program threshold voltage of the first memory cell. The memory device may generate a metric of a threshold voltage shift of a second memory cell based on the estimated threshold voltage shift of the first memory cell. Also, the memory device may determine data stored in the second memory cell based on the metric.Type: GrantFiled: July 30, 2009Date of Patent: March 22, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Heeseok Eun, Jae Hong Kim, Kyoung Lae Cho
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Patent number: 7872909Abstract: Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell.Type: GrantFiled: July 25, 2008Date of Patent: January 18, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Hwan Song, Heeseok Eun, Dong Hun Yu, Jun Jin Kong
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Publication number: 20100302850Abstract: The storage device includes a storage unit configured to store data, an error controlling unit configured to correct an error of the data read out from the storage unit according to at least one read level, and a read level controlling unit configured to control the at least one read level when the error is uncorrectable. The read level controlling unit is configured to measure a distribution of memory cells of the storage unit, configured to filter the measured distribution, and configured to reset the at least one read level based on the filtered distribution.Type: ApplicationFiled: April 12, 2010Publication date: December 2, 2010Inventors: Yong June Kim, Heeseok Eun, Han Woong Yoo, Jaehong Kim, Hong Rak Son
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Patent number: 7843727Abstract: A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.Type: GrantFiled: September 11, 2008Date of Patent: November 30, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Kyoung Lae Cho, Donghun Yu, Yoon Dong Park, Jun Jin Kong, Jae Hong Kim, Heeseok Eun
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Patent number: 7831881Abstract: The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit.Type: GrantFiled: September 5, 2008Date of Patent: November 9, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Heeseok Eun, Jae Hong Kim, Jun Jin Kong
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Publication number: 20100254189Abstract: A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.Type: ApplicationFiled: June 14, 2010Publication date: October 7, 2010Inventors: Kyoung Lea Cho, Yoon Dong Park, Jun Jin Kong, Jong Han Kim, Jae Hong Kim, Young Hwan Lee, Heeseok Eun, Seung-Hwan Song
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Publication number: 20100246286Abstract: In a method of operating a nonvolatile memory device, data is read using a read level, and a range of logic values for erasure-decoding the read data is set. The bits of the read data corresponding to the set range of logic values are set as erasure bits, and an erasure decoding operation is performed.Type: ApplicationFiled: February 16, 2010Publication date: September 30, 2010Inventors: Yong June Kim, Jaehong Kim, Heeseok Eun