Abstract: According to various aspects, a method is provided including: setting a memristive element into a memristive state of a plurality of memristive states, determining one or more static state parameter values of the memristive element associated with the memristive state, wherein determining the one or more static state parameter values includes: determining a current/voltage characteristic of the memristive element, and fitting the current/voltage characteristic based on a physical model to determine the one or more static state parameter values, wherein the physical model is based on static state parameters for which the static state parameter values are determined.

Abstract: According to various aspects, a method is provided including: writing a memristive element into a memristive state of a plurality of memristive states; and determining one or more dynamic state parameter values of the memristive element associated with the writing of the memristive element into the memristive state, wherein determining the one or more dynamic state parameter values includes: determining a current/voltage characteristic of the memristive element, and fitting the current/voltage characteristic by a physical model to determine the one or more dynamic state parameter values, wherein the physical model is based on dynamic state parameters for which the dynamic state parameter values are determined.

Abstract: According to various aspects, a device is provided including: a memristive element residing in a memristive state of a plurality of memristive states; and a read circuit configured to: in a first measurement, measure a first voltage drop over the memristive element or a first current through the memristive element, in a second measurement subsequent to the first measurement, measure a second voltage drop over the memristive element or a second current through the memristive element; and determine the memristive state of the memristive element based on the first measurement and the second measurement.

Abstract: A device includes a memristive element; and a write circuit to write the memristive element into a memristive state of a plurality of memristive states by a write operation, wherein the memristive state has a characteristic flux and/or a characteristic charge; wherein the characteristic flux corresponds to a characteristic voltage drop over the memristive element applied for a saturation time and wherein the characteristic charge corresponds to a characteristic current through the memristive element applied for a saturation time; wherein the write operation includes: causing a write voltage drop over the memristive element that is greater than the characteristic voltage drop associated with the memristive state or causing a write current through the memristive element that is higher than the characteristic write current associated with the memristive state, each for a total write time that is shorter than the saturation time.

Abstract: A transparent specimen slide on which the range and the magnitude of the near-surface electrostatic forces can be influenced and set during a process of producing the specimen slide. The specimen slide has a surface on the supporting side and a surface facing away from the supporting side and at least three layers: an electrically insulating first layer, a silicon-containing second layer arranged on the first layer, and an electrically insulating third layer arranged on the second layer. An interface is formed between the first and second layers and between the second and third layers with a first surface charge density. The interface between the second and third layers has a second surface charge density. The first and second surface charge densities have the same or different signs.

Abstract: According to various aspects, a memristive structure is provided including: a first electrode, a second electrode, and a memristive element arranged between the first electrode and the second electrode; wherein the memristive element includes a memristive material that has a ferroelectric polarization capability, and wherein the memristive material has a crystalline microstructure configured to suppress a substantial ferroelectric switching of the memristive element in response to a voltage drop over the memristive element applied via the first electrode and the second electrode.

Abstract: An apparatus for generating a binary numerical sequence is provided. The apparatus is configured to apply a first write voltage or a second write voltage, different from the first write voltage, as a write voltage to each of two or more switchable elements, and/or to apply a first read voltage or a second read voltage, different from the first read voltage, as a read voltage to each of the two or more switchable elements. Each switchable element of the two or more switchable elements is configured to output, in dependence on the write voltage applied to the switchable element and/or in dependence on the read voltage applied to the switchable element, an output voltage with a first random or pseudo-random voltage value from a first voltage value range or with a second random or pseudo-random voltage value from a second voltage value range.

Abstract: An apparatus for generating a sequence of random numbers has a switchable element switchable to a first state by applying a first bias voltage, and to a second state by applying a different, second bias voltage, configured, when switched to the first state, to output a first output voltage having a first random or pseudorandom voltage value, and, when switched to the second state, to output a second output voltage, further having a comparator configured to output, if the first output voltage is smaller than or equal to a first threshold voltage, a first numerical value, and to output, if the first output voltage is greater than the first threshold voltage, a different, second numerical value. Furthermore, if the second output voltage is smaller than or equal to a second threshold voltage, the comparator is configured to output the first numerical value, and if the second output voltage is greater than the second threshold voltage, to output the second numerical value, or vice versa.

Abstract: A decoder for decoding to obtain a binary data sequence is provided. The decoder includes a first inductance element, a first state element, a second inductance element, a second state element, an inductance sequence generator, a first comparison unit and a second comparison unit. The inductance sequence generator is configured to generate an inductance sequence including a plurality of inductance values and to adjust each inductance value of the plurality of inductance values of the inductance sequence at the first inductance element and at the second inductance element.

Abstract: A method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance is disclosed. A unique voltage-time profile is applied between a first and a second electrically conductive contact attached to the rare earth manganate, such that the rare earth manganate passes through an ordering temperature in a region of an electric field forming between the two electrically conductive contacts during a cooling process during and after application of the voltage pulse or the voltage ramp, and the vortex density is thus influenced and adjusted locally in the region of the electric field forming between the two electrically conductive contacts.

Abstract: A transparent specimen slide on which the range and the magnitude of the near-surface electrostatic forces can be influenced and set during a process of producing the specimen slide. The specimen slide has a surface on the supporting side and a surface facing away from the supporting side and at least three layers: an electrically insulating first layer, a silicon-containing second layer arranged on the first layer, and an electrically insulating third layer arranged on the second layer. An interface is formed between the first and second layers and between the second and third layers with a first surface charge density. The interface between the second and third layers has a second surface charge density. The first and second surface charge densities have the same or different signs.

Abstract: An encoder for encoding an input binary value of a binary input data sequence by generating an output current of an output current signal is provided. The encoder includes a control module and a switchable resistive element. The switchable resistive element is configured to either be in a first state or in a different second state depending on a first input voltage at a first point in time and depending on a second input voltage at a later second point in time. The control module is configured to apply the first input voltage to the switchable resistive element at the first point in time so that the first input voltage depends on the input binary value.

Abstract: An electronic memristive device that has a complementary analog reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states.

Abstract: The invention relates to an electronic memristive device that has a complementary analogue reconfigurable memristive bidirectional resistive switch. The device has a memristive layer sequence having a BFTO/BFO/BFTO three-ply layer and two electrodes. Titanium traps are arranged in the BFTO interfaces. As a result of mobile acid vacancies, the potential barriers at the interfaces of the electrodes with respect to the memristive layer sequence are in flexible form. By applying voltage pulses, the acid vacancies can be shifted from the interface with respect to the first electrode to the interface with respect to the second electrode, with raising of the potential barrier at one electrode bringing about complementary lowering of the potential barrier of the other electrode. The method according to the invention for operating the device proposes adapted writing processes that use the overlaying of writing pulse sequences to achieve stipulation of a state pair of complementary resistor states.

Abstract: A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.

Abstract: Carriers for biomaterials, for polyelectrolyte materials, for electrically polarizable atoms, ions, molecules are provided wherein the material of the carriers is compatible with materials that are used in microelectronics. The arrangement of the biomaterials or biomolecules and optionally of biomolecules, biomaterials, biological functional units or cells adsorbed thereon can be affected with the carrier in a specific manner. Complex molecular machines can be built and tested by the carriers.

Abstract: Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11?, 11?) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

Abstract: Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11?, 11?) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (O), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.

Abstract: A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.

Abstract: Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.