Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.

Abstract: An illumination system of a microlithographic exposure apparatus comprises a condenser for transforming a pupil plane into a field plane. The condenser has a lens group that contains a plurality of consecutive lenses. These lenses are arranged such that a light bundle focused by the condenser on an on-axis field point converges within each lens of the lens group. At least one lens of the lens group has a concave surface. The illumination system may further comprise a field stop objective that at least partly corrects a residual pupil aberration of the condenser.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: A projection lens for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ?<260 nm has a multiplicity of optical elements having optical surfaces which are arranged in a projection beam path between the object plane (OS) and the image plane. Provision is made of a wavefront manipulation system for dynamically influencing the wavefront of the projection radiation passing from the object plane to the image plane.

Abstract: A magnifying imaging optical system is disclosed that has precisely three mirrors, which image an object field in an object plane into an image field in an image plane. A ratio between a transverse dimension of the image field and a transverse dimension measured in the same direction of a useful face of the last mirror before the image field is greater than 3. In a further aspect, the magnifying imaging optical system is disclosed that has at least three mirrors, which image an object field in an object plane in an image field in an image plane. A first mirror in the beam path after the object field is concave, a second mirror is also concave and a third mirror is convex. An angle of incidence of imaging beams on the last mirror before the image field is less than 15°.

Abstract: A mirror for EUV radiation comprises a total reflection surface, which has a first EUV-radiation-reflecting region and at least one second EUV-radiation-reflecting region, wherein the EUV-radiation-reflecting regions are structurally delimited from one another, wherein the first region comprises at least one first partial reflection surface which is surrounded along a circumference in each case by the at least one second region, and wherein the at least one second EUV-radiation-reflecting region comprises at least one second partial reflection surface which is embodied in a path-connected fashion and which is embodied in a continuous fashion.

Abstract: The present invention relates to an optical imaging device, in particular for microscopy, with a first optical element group and a second optical element group, wherein the first optical element group and the second optical element group, on an image plane, form an image of an object point of an object plane via at least one imaging ray having an imaging ray path. The first optical element group comprises a first optical element with a reflective first optical surface in the imaging ray path and a second optical element with a reflective second optical surface in the imaging ray path, wherein the first optical surface is concave. The second optical element group comprises a third optical element with a concave reflective third optical surface in the imaging ray path and a fourth optical element with a convex reflective fourth optical surface in the imaging ray path without light passage aperture.

Abstract: The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.

Abstract: A device including an imaging optical unit (9) imaging an object field (5) in an image field (10), a structured mask (7), arranged in the region of the object field (5) via reticle holder (8) displaceable in a reticle scanning direction (21), and a sensor apparatus (25), arranged in the region of the image field (10) via a substrate holder (13) displaceable in a substrate scanning direction (22). The mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) includes at least one sensor row (28) with a multiplicity of sensor elements (29), and affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the substrate holder.

Abstract: The invention relates to a method for mask inspection and to a mask inspection installation. A method according to the invention involves a lighting system lighting a mask with a lighting beam pencil, and said mask being observed with an observation beam pencil which is directed onto a sensor arrangement, wherein the light hitting the sensor arrangement is evaluated in order to check the mapping effect of the mask. The lighting system produces a spot of light with limited refraction on the mask, and during the evaluation of the light hitting the sensor arrangement a finite component of the light setting out from the mask to produce the observation beam pencil is disregarded.

Abstract: In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.

Abstract: The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane.

Abstract: The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.

Abstract: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |??| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.

Abstract: A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

Abstract: An illumination system and a projection objective of a mask inspection apparatus are provided. During operation of the mask inspection apparatus, the illumination system illuminates a mask with an illumination bundle of rays having a centroid ray that has a direction dependent on the location of the incidence of the illumination bundle of rays on the mask.

Abstract: An objective having a plurality of optical elements arranged to image a pattern from an object field to an image field at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength ? includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion ?ni=ni(?0)?ni(?0+1 pm) for a wavelength variation of 1 pm from a wavelength ?0. The objective satisfies the relation ? ? i = 1 N ? ? ? ? n i ? ( s i - d i ) ? ? 0 ? NA 4 ? A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.2 or below, spherochromatism is sufficiently corrected.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.