Patents by Inventor Heinrich Schloetterer

Heinrich Schloetterer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Effusion cell of a molecular beam epitaxy system
    Patent number: 5171370
    Abstract: An apparatus with a crucible in an effusion cell of a molecular beam epitaxy system provides the crucible shaped and mounted in such a way that the molecular beam is optimized relative to the substrate. In particular, when a circular substrate is tilted relative to the beam direction, the shape of the crucible, of the crucible mount, and the alignment of the center axis of the crucible relative to the center axis of the cell are adapted to optimize the beam impingement on the substrate.
    Type: Grant
    Filed: April 18, 1990
    Date of Patent: December 15, 1992
    Assignee: Siemens Aktiengesellschaft
    Inventors: Johann-Peter Reithmaier, Heinrich Schloetterer
  • Schottky gate field effect transistor
    Patent number: 3997908
    Abstract: A Schottky gate field effect transistor of the type comprising a silicon body of one conductivity type on an insulator substrate, and source, drain and gate electrodes is provided with a pn-junction located parallel to the surface of the substrate which produces a space charge zone occupying the zones of the silicon body close to the substrate surface, and a relatively thin active layer is located between the space charge zone and the gate electrode, the active layer having the same type conductivity as the silicon body.
    Type: Grant
    Filed: March 28, 1975
    Date of Patent: December 14, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinrich Schloetterer, Jenoe Tihanyi