Abstract: Methods and apparatus for improving substrate throughput prior to processing a plurality of substrates in a cluster tool having a plurality of processing chambers and at least two robots are provided. The method comprises developing a process sequence, storing the process sequence on a storage device, and transferring the process sequence from the storage device to a controller in communication with the cluster tool. The process sequence comprises depositing one or more uniform resist layers on the surface of the plurality of substrates, transferring the plurality of substrates out of the cluster tool to a separate stepper or scanner tool to pattern the surface of the plurality of substrates by exposing the resist layer to a resist modifying electromagnetic radiation, and then developing the patterned resist layer.

Abstract: Methods and apparatus for increasing the processing throughput of multiple lots of semiconductor wafers through a cluster tool while maintaining a constant wafer history for each lot are provided. A first lot of wafers containing one through n-th wafers is introduced into a cluster tool containing one or more processing chambers. The first lot of wafers is processed for a first time period. A second lot of wafers containing one through n-th wafers is introduced into the cluster tool prior to completion of the first time period, wherein the second lot is introduced so as to minimize a time gap between the n-th wafer of the first lot of wafers and the first wafer of the second lot of wafers while maintaining a first constant wafer history for each wafer within the first lot and maintaining a second constant wafer history for each wafer in the second lot.

Abstract: A method of processing a substrate includes forming a coating layer over a front surface of the substrate and exposing the coating layer in an immersion scanner. The coating layer may include a photoresist layer. The method also includes performing one or more immersion processes on the substrate after exposure. As an example, the one or more immersion processes include an immersion post-exposure bake process.

Abstract: Methods and apparatus for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput and repeatable wafer processing history are provided. In one embodiment a first substrate is transferred from a first position to a second position and then the first substrate is transferred from the second position to a third position using a first robot. A second substrate is transferred from a first position to a second position and then the second substrate is transferred from the second position to a third position using a second robot. The movement of the first and second robots is synchronized so that the movement from the first position to the second position by the first and second robot is performed within a first time interval.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.

Abstract: The invention relates to a method, system and computer program useful for producing a product, such as a microelectronic device, for example in an assembly line, where the production facility includes parallel production of assembly lines of products on identically configured chambers, tools and/or modules. Control is provided between such chambers. Behaviors of a batch of wafers (or of each wafer) are collected as the first batch (or each wafer) is processed by one of the identically configured chambers in one assembly line to produce the microelectronic device. The information relating to the behavior is shared with a controller of another one (or more) of the identically configured chambers, process tools and/or modules, to provide an adjustment of the process tool and thereby to produce a second batch (or next wafer) which is substantially identical, within tolerance, to the first batch (or wafer).

Abstract: Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.

Abstract: A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

Abstract: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

Abstract: The invention relates to a method, system and computer program useful for producing a product, such as a microelectronic device, for example in an assembly line, where the production facility includes parallel production of assembly lines of products on identically configured chambers, tools and/or modules. Control is provided between such chambers. Behaviors of a batch of wafers (or of each wafer) are collected as the first batch (or each wafer) is processed by one of the identically configured chambers in one assembly line to produce the microelectronic device. The information relating to the behavior is shared with a controller of another one (or more) of the identically configured chambers, process tools and/or modules, to provide an adjustment of the process tool and thereby to produce a second batch (or next wafer) which is substantially identical, within tolerance, to the first batch (or wafer).