Patents by Inventor Helge Riemann
Helge Riemann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9422636Abstract: A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards.Type: GrantFiled: November 23, 2010Date of Patent: August 23, 2016Assignee: FORSCHUNGSVERBUND BERLIN E.V.Inventors: Helge Riemann, Nikolai V. Abrosimov, Joerg Fischer, Matthias Renner
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Patent number: 9084296Abstract: An induction heating coil melts granules composed of semiconductor material on a plate with an outlet tube. The induction heating coil has a coil body provided with current-guiding slots, the coil body having an upper side and a lower side and having a passage opening for granules in a region of the coil body that lies outside the center of the coil, and current-carrying segments which project from the center of the lower side of the coil body and which are electrically conductively connected by a web at a lower end.Type: GrantFiled: February 26, 2009Date of Patent: July 14, 2015Assignee: Siltronic AGInventors: Ludwig Altmannshofer, Joerg Fischer, Helge Riemann, Wilfried von Ammon
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Patent number: 8580033Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.Type: GrantFiled: March 13, 2013Date of Patent: November 12, 2013Assignee: Siltronic AGInventors: Wilfried von Ammon, Ludwig Altmannshofer, Helge Riemann, Joerg Fischer
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Patent number: 8475592Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.Type: GrantFiled: August 11, 2009Date of Patent: July 2, 2013Assignee: Siltronic AGInventors: Wilfried von Ammon, Ludwig Altmannshofer, Helge Riemann, Joerg Fischer
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Patent number: 8337615Abstract: A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.Type: GrantFiled: April 4, 2006Date of Patent: December 25, 2012Assignee: PV Silicon Forschungs und Produktions GmbHInventors: Nikolai Abrosimov, Anke Luedge, Andris Muiznieks, Helge Riemann
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Publication number: 20120285369Abstract: A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards.Type: ApplicationFiled: November 23, 2010Publication date: November 15, 2012Applicant: FORSCHUNGSVERBUND BERLIN E.V.Inventors: Helge Riemann, Nikolai V. Abrosimov, Joerg Fischer, Matthias Renner
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Patent number: 8197595Abstract: A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality of draw openings and a plate with a slot as a current supply of the HF current so as to provide a circumfluent current to the central opening. An upper end of a raw silicon rod is heated by induction using the flat induction coil so as to form a melt pool. A thin silicon rod is drawn upwards through each of the plurality of draw openings in the flat induction coil from the melt pool without drawing a thin silicon rod through the central opening having the circumfluent current.Type: GrantFiled: January 19, 2010Date of Patent: June 12, 2012Assignee: PV Silicon Forschungs und Produktions GmbHInventors: Helge Riemann, Friedrich-Wilhelm Schulze, Joerg Fischer, Matthias Renner
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Publication number: 20110314869Abstract: A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality of draw openings and a plate with a slot as a current supply of the HF current so as to provide a circumfluent current to the central opening. An upper end of a raw silicon rod is heated by induction using the flat induction coil so as to form a melt pool. A thin silicon rod is drawn upwards through each of the plurality of draw openings in the flat induction coil from the melt pool without drawing a thin silicon rod through the central opening having the circumfluent current.Type: ApplicationFiled: January 19, 2010Publication date: December 29, 2011Applicant: PV Silicon Forschungs und Produktions GmbHInventors: Helge Riemann, Friedrich-Wilhelm Schulze, Joerg Fischer, Matthias Renner
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Publication number: 20100037815Abstract: A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.Type: ApplicationFiled: August 11, 2009Publication date: February 18, 2010Applicant: Siltronic AGInventors: Wilfried von Ammon, Ludwig Altmannshofer, Helge Riemann, Joerg Fischer
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Publication number: 20090223949Abstract: An induction heating coil melts granules composed of semiconductor material on a plate with an outlet tube. The induction heating coil has a coil body provided with current-guiding slots, the coil body having an upper side and a lower side and having a passage opening for granules in a region of the coil body that lies outside the center of the coil, and current-carrying segments which project from the center of the lower side of the coil body and which are electrically conductively connected by a web at a lower end.Type: ApplicationFiled: February 26, 2009Publication date: September 10, 2009Applicant: SILTRONIC AGInventors: Ludwig Altmannshofer, Joerg Fischer, Helge Riemann, Wilfried von Ammon
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Publication number: 20090068407Abstract: A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.Type: ApplicationFiled: April 4, 2006Publication date: March 12, 2009Applicant: PV Silicon Forschungs-und Produktions AGInventors: Nikolai Abrosimov, Anke Luedge, Andris Muiznieks, Helge Riemann
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Patent number: 7326297Abstract: The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front.Type: GrantFiled: May 6, 2003Date of Patent: February 5, 2008Assignee: PV Silicon Forschungs- und Produktions AG.Inventors: Nikolai V. Abrosimov, Helge Riemann
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Publication number: 20050188918Abstract: The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front.Type: ApplicationFiled: May 6, 2003Publication date: September 1, 2005Inventors: Nikolai Abrosimov, Helge Riemann