Abstract: The invention relates to a method and to a device for the thermal treatment of substrates, in particular semiconductor wafers, and to a holding unit for substrates. In the method, in a process unit having a process chamber and having a plurality of radiation sources, one or more substrates are held in a box having a lower part and having a cover, wherein the lower part and the cover form a holding space for the substrate therebetween. Furthermore, the following steps are performed in the method: loading the box and the substrate into the process chamber and closing the process chamber; purging the holding space of the box with a purging gas and/or a process gas before the box and the substrate contained therein are heated to a desired process temperature in order to establish a desired atmosphere inside the box; and heating the box and the substrate contained therein to the desired process temperature by means of thermal radiation emitted by the radiation sources.

Abstract: A device and a method for reducing particle exposure to substrates during thermal treatment are disclosed. Semiconductor wafers may be rotated on a device within a process chamber divided into two partial chambers such that a first partial chamber contains the substrate to be thermally treated and a second partial chamber contains at least parts of the rotation device. Between the partial chambers, a flow of gas is set such that gas from the second partial chamber is substantially prevented from passing into the first partial chamber. In this way, particles which are produced by rotation abrasion in the second partial chamber are largely prevented from passing onto the substrate to be thermally treated. This device and this method are particularly advantageous if the rotation is realized by means of a gas drive, wherein the gas used for the rotation can be introduced directly into the second partial chamber.

Abstract: The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.

Abstract: Air bearings support a rotating wafer carrying base in an RTP system. The base in proximity to the air bearing is protected from warping due to absorption of radiation from the hot wafer being treated. The most preferred embodiment splits the base into an inner disk carrying the wafer and an outer ring, where the inner ring which absorbs the most energy contacts and is supported at three points by the outer disk which is supported by the air bearing.

Abstract: An apparatus for preventing warping of a rotatable base for supporting an object being processed in a Rapid Thermal Processing (RTP) system due to non uniform heating of the base by radiation from the object being processed is disclosed.

Abstract: An apparatus, method, and system for Rapid Thermal Processing (RTP), whereby the object to be processed is rotated under the radiation sources of the RTP system by a gas jet system, is presented.

Abstract: A rapid thermal processing (RTP) chamber is disclosed, wherein a transparent plate and a body are sealed with a gas tight seal, and wherein the gas tight seal is activated by inflating an inflatable element.