Abstract: A power semiconductor module is disclosed with a housing that includes a hardenable plastic casting compound and a base plate, wherein electric power semiconductor components are arranged on a section of the surface of the base plate that faces the housing via an insulating layer. At least the section of the surface of the base plate that faces the housing and contains the electric power semiconductor components is encapsulated in the housing wherein the hardenable plastic casting compound has a hardness between 30 and 95 ShoreA.

Abstract: A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method comprises the steps of bonding an insulating substrate (2) onto a bottom plate (11); disposing a first conductive layer (4) on a portion of said insulating substrate (2), so that at least one peripheral top region of said insulating substrate (2) remains uncovered by the first conductive layer (4); bonding a semiconductor chip (6) onto said first conductive layer (4); disposing a precursor (51) of a first insulating material (5) in a first corner (24) formed by said first conductive layer (4) and said peripheral region of said insulating substrate (2); polymerizing the precursor (51) of the first insulating material (5) to form the first insulating material (5): and covering said semiconductor chip (6), said substrate (2), said first conductive layer (4), and said first insulating material (5) at least partially with a second insulating material.

Abstract: The invention proposes a power semiconductor module with a housing (1) that consists of a hardenable plastic casting compound and a base plate (2), wherein electric power semiconductor components (4) are arranged on a section of the surface of the base plate (2) that faces the housing (1) by means of an insulating layer (5). At least the section of the surface of the base plate (2) that faces of the housing (1) and contains the electric power semiconductor components (4) is encapsulated in the housing( ), wherein the hardenable plastic casting compound has a hardness between 30 and 95 ShoreA.

Abstract: A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method includes steps of bonding an insulating substrate onto a bottom plate; disposing a first conductive layer on a portion of said insulating substrate, so that at least one peripheral top region of said insulating substrate remains uncovered by the first conductive layer; bonding a semiconductor chip onto said first conductive layer; disposing a precursor of a first insulating material in a first corner formed by the first conductive layer and the peripheral region of the insulating substrate; polymerizing the precursor of the first insulating material to form the first insulating material; and covering the semiconductor chip, said substrate, the first conductive layer, and the first insulating material at least partially with a second insulating material. The precursor of the first insulating material can be a low viscosity monomer or oligomer, preferably a polyimide.

Abstract: A power semiconductor module is specified in which at least one semiconductor chip, which is fitted on a baseplate, is made contact with by a respective contact plunger. The position of the contact plungers can be set individually in a manner corresponding to a distance between the semiconductor chips and a main connection which accommodates the contact plungers. The contact plungers are either subjected to pressure by means of a spring or fixed by means of a solder layer.

Abstract: In a pressure-contacted large-area power semiconductor element, in which a substrate (1) is compressed between an anode-side (20) and a cathode-side compression plate (19), an improved contact is obtained by arranging, at least between one of the compression plates (19,20) and the associated contact (2,9), a metal foil (17) which is soldered to this contact.

Abstract: For the p-type doping of silicon, particularly for power semiconductor components, aluminum from an Al target is precipitated by cathode sputtering in an argon plasma on a major face (2) of a silicon wafer (1) by which means a comparatively high purity of the deposited aluminum is achieved. Before the aluminum deposition, the silicon water (1) is bombarded with argon ions for 10 min at an argon pressure of 20 .mu.bar which guarantees a uniform fusion of the aluminum with the silicon during later heating and, in particular, prevents the formation of droplets of the aluminum on the major face (2). The Al layer formed in this manner is photo-lithographically preferably structured in such a manner that several aluminum sources spaced apart from each other are allocated to one aluminum-doped zone (10). The subsequent diffusion occurs for 300 min at 1250.degree. C. in a gas mixture of nitrogen or argon (1 l/min) and oxygen (20 ml/min). During this process, the aluminum-doped zone (10) is produced.

Abstract: A large-area semiconductor component (1) is joined without bubbles by means of soldering to a substrate (2) by placing a perforated metallic intermediate layer (5) between the solder (3) before the soldering and the substrate (2) and the assembly is brought to soldering temperature under pressure and perpendicular to the soldering plane. During this process, the solder (4) completely fills the cavities between the components (1, 2) and (5) after the soldering and drives gas bubbles and any impurities to the periphery of the assembly, a constant distance being maintained between the semiconductor component (1) and the substrate (2). The intermediate layer (5) is preferably constructed as structured foil or as metallic fabric.

Abstract: Method for the direct joining of metal pieces which have a surface metal oxide layer, to oxide ceramic substrates by heating the ceramic substrates covered with the metal pieces in an oxygen-containing atmosphere to a temperature above the eutectic temperature of the metal and the metal oxide, but below the melting temperature of the metal. The heating is carried out in a continuous heating furnace in a nitrogen atmosphere with an addition of oxygen of 20 to 50 vpm. The cooling-down in the continuous heating furnace takes place after the solidification of the eutectic melt, in a nitrogen atmosphere which has an oxygen content well below the 20 vpm.