Abstract: A ternary state content addressable memory (CAM) cell that includes two DRAM cells. In addition to a port for controlling and transmitting data to the CAM, another port is exclusively used for refreshing the DRAM cells. A refresh word line is coupled to the two DRAM cells for performing DRAW cell refresh. A refresh bit line is coupled to the first of the two DRAM cells for refreshing this first DRAM cell. A refresh bit line is coupled to the second of the two DRAM cells for refreshing this second DRAM cell. Problematic power consumption and voltage swing found in a conventional CAM are overcome in the CAM. A swing line (SL) is coupled to said first and second DRAM cells and a local match line (LML) of said CAM cell, said SL having an adjustable voltage level for changing voltage swing in said LML to regulate trade-off between power consumption and speed of said CAM cell.

Abstract: A dynamic random access memory (DRAM) having a conventional cell layout and having its data access path adapted to access a ‘zero’ faster than a ‘one.’ The DRAM comprising two capacitors coupled respectively to two neighboring word lines. The two capacitors are also coupled respectively to two neighboring bit lines via two pass gates. Data is represented as complementary data bits on the two capacitors. In so doing, a ‘zero’ is ensured to be stored in either one of the two capacitors. A voltage level ‘zero’ is in turn ensured to be maintained on the bit line coupled to the capacitor that stores the ‘zero’ data bit. The sense amplifier and the write driver take advantage of the fact that a voltage level ‘zero’ is ensured to be maintained in either one of the two bit lines.

Abstract: A unique gate array cell and ASIC library development methodology is taught which require no new simulations or new place and route to port a given device design to a same generation process technologies which are available from different vendors. This methodology make use of the minimum design rules from different vendors without reroute of the physical database. This methodology equalizes the functionality and timing characteristics of the macrocell library on a plurality of alternate sources.

Abstract: A self-aligned silicide base contact structure for a bipolar transistor, and a process for fabricating the structure are disclosed. The structure has four key elements: a base region 36, a polycrystalline silicon emitter contact region 50, a spacer oxide 60 and 62, and a base contact 74 formed of metal silicide. The spacer oxide is an insulator that electrically isolates the side walls of the emitter contact region from the upper surface of the base region. The spacer oxide is a residual amount of oxide that is left on the side walls of the emitter contact region after anisotropic etching is used to remove most of a covering layer of oxide. The metal silicide base contact is created on an exposed upper surface of the base region, and is formed by first depositing a metal layer on the upper surface of the base region, and then heat treating. Where metal and silicon atoms are in contact, such as along the exposed upper surface of the base region, metal silicide forms.

Abstract: A Schottky diode is fabricated according to the following steps: forming a layer of metal-silicide on an underlying dielectric layer, forming a polysilicon layer on the upper surface of the metal-silicide layer, forming a second dielectric layer on the upper surface of the polysilicon layer and patterning the second dielectric layer to create a contact window through the second dielectric layer to an exposed surface region of the polysilicon layer, and forming a metal contact to the exposed surface region.

Abstract: A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read-only memories and programmable logic arrays, and allows fabrication of Schottky diodes more compactly than previous structures.

Abstract: An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.

Abstract: A microprocessor integrated circuit (50) has a read only memory (ROM) (400) which is X and Y addressible and is word, bit and page oriented. The microprocessor integrated circuit (50) has a main injector bus (602) and a ground return bus (604) with a branch ground bus (608) connected to the ground return bus (604) through a ground-balancing resistor (610) in a data path. The circuit (50) has a register file (82) with registers (622) connected to a local bus (604). The local busses (604) are connected to a main bus (602) through a multiplexer (605). The microprocessor integrated circuit (50) includes a D-type flip-flop circuit (700) with asynchronous clear and preset. A latch dual port random access memory (RAM) circuit (900) is employed in the register file (82) of the microprocessor integrated circuit (50).

Abstract: A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read-only memories and programmable logic arrays, and allows fabrication of Schottky diodes more compactly than previous structures.

Abstract: A microprocessor integrated circuit design has improved partitioning between integrated injection logic (I.sup.2 L) and transistor-transistor logic (T.sup.2 L) in the integrated circuit. An information bus structure incorporating a bidirectional input and output buffer and a bidirectional input and output multiplexer minimizes the number of internal bus lines in the integrated circuit. An improved T.sup.2 - I.sup.2 L interface circuit and structure supplies a T.sup.2 L input to a plurality of I.sup.2 L input stages, each having a restricted cross-sectional area resistor element in the base of an I.sup.2 L input transistor. A storage register in the integrated circuit has a multiplexer portion provided at each flip-flop circuit of the register. A high speed feed forward flip-flop circuit is employed in registers of the integrated circuit where speed is critical. An improved voltage regulator and current source combination in a programmable logic array (PLA) reduces PLA temperature sensitivity. A pair of I.sup.

Abstract: A surface oriented lateral bipolar transistor having a base of narrow width is fabricated by using a doped polycrystalline silicon layer as an ion implantation mask when implanting ions for the emitter and base regions. In forming the doped polysilicon mask, a first layer of dopant masking material is formed on the surface of a semiconductor substrate, a second layer of undoped polysilicon is formed over the first layer, and a third layer of dopant masking material is formed over the second layer. Portions of the second and third layers are removed and a dopant is diffused into the exposed edge portion of the second layer. The third layer and the undoped portion of the second layer are then removed thereby leaving only the doped portion of the second layer on the first layer.

Abstract: An integrated injection logic semiconductor structure having a double diffused lateral PNP transistor and an inverted vertical NPN transistor includes an extended region of epitaxial silicon doped N type by introduction of suitable impurity from two separate regions of the semiconductor surface. This extended N type region, which functions as the base of the PNP transistor, allows an adjoining P type region, which in prior art structures served only as the collector, to be utilized as both the collector and the collector contact, thereby reducing the size of the semiconductor structure. Said N type region substantially lessens the series resistance between the base of the NPN transistor and the collector of the PNP transistor, to thereby facilitate manufacture of integrated injection logic circuits operating faster, at higher current levels, and at higher gain than integrated injection logic circuits not utilizing this invention.

Abstract: A central processing unit (CPU) is utilized in combination with external memories and input/output devices to form a Microcomputer System. The CPU is a 16-bit fixed word length processor monolithically integrated onto a single semiconductor chip which uses two's complement arithmetic for computations. The CPU includes an arithmetic logic unit (ALU), accumulators, data path multiplexers, program counter means, and programmable logic arrays to control operation of the processor.The processor of this invention is capable of using a homogeneous memory, wherein instructions and data are both stored in the same memory. In the disclosed embodiment, 15 of the 16-bits are used for addressing the memory. Thus, the processor is capable of directly addressing 32,768 16-bit words in the memory.An external 16-bit bus is used to interconnect the external memory and input/output devices with the CPU.

Abstract: A graduated multiple collector structure for inverted vertical bipolar transistors, integrated injection logic devices and the like. The invention increases the gain of more distant collectors toward which current flows laterally past intervening collectors from a base contact, and injector or the like. The series resistance drop and the current loss in the base-emitter junction are compensated for by progressively increasing the effective area of collectors further distant from the source of the base current. Although the graduated collector structure is applicable to a wide variety of semiconductor devices, it is particularly well suited for use in oxide-isolated integrated injection logic gates. A mathematical model is provided which can help to optimize designs incorporating the graduated collector structure.