Patents by Inventor Hendrick Hamann

Hendrick Hamann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory cell on silicon-on insulator substrate
    Patent number: 7005665
    Abstract: The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: February 28, 2006
    Assignee: International Business Machines Corporation
    Inventors: Stephen S. Furkay, Hendrick Hamann, Jeffrey B. Johnson, Chung H. Lam, Hon-Sum P. Wong
  • Phase Change Memory Cell On Silicon-On Insulator Substrate
    Publication number: 20050208699
    Abstract: The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.
    Type: Application
    Filed: March 18, 2004
    Publication date: September 22, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen Furkay, Hendrick Hamann, Jeffrey Johnson, Chung Lam, Hon-Sum Wong