Abstract: The present invention refers to a surround-view imaging system for time-of-flight (TOF) depth sensing applications and a time-of-flight sensing based collision avoidance system comprising such an imaging system. The imaging system for time-of-flight depth sensing applications comprises a lens system, adapted for imaging angles of view (AOV) larger than 120° in an image on an image plane; a sensor system, adapted to convert at least a part the image in the image plane into an electronic image signal; and an evaluation electronics, adapted to analyze the electronic image signal and to output resulting environmental information; wherein the lens system and/or the sensor system are designed for specifically imaging fields of view (FOV) starting at zenithal angles larger than 60°.

Abstract: The present invention refers to a surround-view imaging system for time-of-flight (TOF) depth sensing applications and a time-of-flight sensing based collision avoidance system comprising such an imaging system. The imaging system for time-of-flight depth sensing applications comprises a lens system, adapted for imaging angles of view (AOV) larger than 120° in an image on an image plane; a sensor system, adapted to convert at least a part the image in the image plane into an electronic image signal; and an evaluation electronics, adapted to analyze the electronic image signal and to output resulting environmental information; wherein the lens system and/or the sensor system are designed for specifically imaging fields of view (FOV) starting at zenithal angles larger than 60°.

Abstract: The present invention refers to a surround-view imaging system for time-of-flight (TOF) depth sensing applications and a time-of-flight sensing based collision avoidance system comprising such an imaging system. The imaging system for time-of-flight depth sensing applications comprises a lens system, adapted for imaging angles of view (AOV) larger than 120° in an image on an image plane; a sensor system, adapted to convert at least a part the image in the image plane into an electronic image signal; and an evaluation electronics, adapted to analyze the electronic image signal and to output resulting environmental information; wherein the lens system and/or the sensor system are designed for specifically imaging fields of view (FOV) starting at zenithal angles larger than 60°.

Abstract: The present invention refers to a surround-view imaging system for time-of-flight (TOF) depth sensing applications and a time-of-flight sensing based collision avoidance system comprising such an imaging system. The imaging system for time-of-flight depth sensing applications comprises a lens system, adapted for imaging angles of view (AOV) larger than 120° in an image on an image plane; a sensor system, adapted to convert at least a part the image in the image plane into an electronic image signal; and an evaluation electronics, adapted to analyze the electronic image signal and to output resulting environmental information; wherein the lens system and/or the sensor system are designed for specifically imaging fields of view (FOV) starting at zenithal angles larger than 60°.

Abstract: The invention relates to a method and a device for producing a semiconductor layer. The problem addressed is that of increasing the deposition rate of the layer constituents and significantly improving the efficiency of a resulting solar cell. At the same time, the material costs are intended to be reduced. The problem is solved by virtue of the fact that, in a vacuum chamber, metal evaporator sources release Cu, In and/or Ga or the chalcogenide compounds, the latter are focused as metal vapor jets onto the substrate, and Se and/or S emerge(s) in an ionized fashion from a chalcogen low-energy wide-beam ion source and this beam is focused onto the surface of the substrate in such a way that it overlaps the metal vapor jets. A device for carrying out the method is described.

Abstract: The invention relates to vaporization source, an evaporation chamber, a coating method and a nozzle plate. The vaporization source according to the invention makes it possible to generate a high, stable melt flow rate having improved layer thickness homogeneity under vacuum conditions in a selenium atmosphere. The direction of the molecular flow of the vaporization source can be adjusted with respect to the substrate support located above the vaporization source.

Abstract: The invention relates to a method and a device for producing a semiconductor layer. The problem addressed is that of increasing the deposition rate of the layer constituents and significantly improving the efficiency of a resulting solar cell. At the same time, the material costs are intended to be reduced. The problem is solved by virtue of the fact that, in a vacuum chamber, metal evaporator sources release Cu, In and/or Ga or the chalcogenide compounds, the latter are focused as metal vapour jets onto the substrate, and Se and/or S emerge(s) in an ionized fashion from a chalcogen low-energy wide-beam ion source and this beam is focused onto the surface of the substrate in such a way that it overlaps the metal vapour jets. A device for carrying out the method is described.