Abstract: A MEMS switch is provided wherein contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the signal transmission contact in “on” state. Provided is a MEMS switch 100 including a first electrode 101, a second electrode 104 opposed to and separated from the first electrode, a third and a fourth electrodes 1021 and 1022, wherein electrical contact is made between the electrodes 101 and 104 by electrostatic force generated between the electrode 101 and the electrodes 1021, 1022, and a bump which can form the contact between the electrode 101 and the electrode 1021 and/or 1022 is provided on the electrode 101, and a gap is formed between the electrode 101 and the electrode 1021 and/or 1022 when the electrical contact is made, and control signals are input to the electrodes 1021 and 1022 independently.

Abstract: A MEMS switch in which contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the contact where the signal is transmitted in an “on” state. The MEMS switch includes a first electrode, a second electrode opposed to and separated from the first electrode, a third and a fourth electrodes, wherein electrical contact is made between the electrodes by electrostatic force generated between the electrodes, and a bump which can form the contact between the electrodes is provided on an electrode, and a gap is formed between the electrodes when the electrical contact is made between the electrodes.

Abstract: A MEMS switch is provided, wherein contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the contact where the signal is transmitted in “on” state. Provided is a MEMS switch 100 including a first electrode 101, a second electrode 104 opposed to and separated from the first electrode, a third and a fourth electrodes 1021 and 1022, wherein electrical contact is made between the electrode 101 and the electrode 104 by electrostatic force generated between the electrode 101 and the electrodes 1021, 1022, and a bump which can form the contact between the electrode 101 and the electrode 1021 and/or 1022 is provided on the electrode 101, and a gap is formed between the electrode 101 and the electrode 1021 and/or 1022 when the electrical contact is made between the electrodes 101 and 104.

Abstract: A MEMS switch is provided wherein contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the signal transmission contact in “on” state. Provided is a MEMS switch 100 including a first electrode 101, a second electrode 104 opposed to and separated from the first electrode, a third and a fourth electrodes 1021 and 1022, wherein electrical contact is made between the electrodes 101 and 104 by electrostatic force generated between the electrode 101 and the electrodes 1021, 1022, and a bump which can form the contact between the electrode 101 and the electrode 1021 and/or 1022 is provided on the electrode 101, and a gap is formed between the electrode 101 and the electrode 1021 and/or 1022 when the electrical contact is made, and control signals are input to the electrodes 1021 and 1022 independently.

Abstract: A tuneable film bulk acoustic resonator (FBAR) device. The FBAR device includes a bottom electrode, a top electrode and a piezoelectric layer in between the bottom electrode and the top electrode. The piezoelectric layer has a first overlap with the bottom electrode, where the first overlap is defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode. The FBAR device also includes a first dielectric layer in between the piezoelectric layer and the bottom electrode and a mechanism for reversibly varying an internal impedance of the device, so as to tune a resonant frequency of the FBAR device.

Abstract: The present invention relates to a method of fabricating a microstructure having an inside cavity comprising the steps of:

Abstract: A method of fabricating a microstructure having an inside cavity. The method includes depositing a first layer or a first stack of layers in a substantially closed geometric configuration on a first substrate. Then, performing an indent on the first layer or on the top layer of said first stack of layers. Then, depositing a second layer or a second stack of layers substantially with said substantially closed geometric configuration on a second substrate. Then, aligning and bonding said first substrate on said second substrate such that a microstructure having a cavity is formed according to said closed geometry configuration.

Abstract: The sensor according to the present invention provides a device for measuring the magnitude of an applied load as a shift in resonant frequency of a mechanical resonator caused by load-induced strains on the resonator. The sensor includes a substrate, generally constructed of a semiconductor material, e.g. silicon, a diaphragm substantially supported along its outer periphery by the substrate, a boss abutting a region of the diaphragm remote from the outer periphery of the diaphragm, at least one resonator in the form of a beam having one end integral to the diaphragm proximate the region of the boss and the other end integral to the diaphragm remote from the boss, a hermetic seal for enclosing the resonator, and an exciter/detector for measuring changes in the natural frequency of the resonator due to an applied load. Preferably, the sensor includes a differential resonator configuration in which the resonators are positioned rectilinearly with respect to each other and are covered by the same hermetic seal.