Abstract: A laser beam monitoring system configured to monitor an attribute of an incident laser beam (24), the laser beam monitoring system comprising a beam separating element (30) and a plurality of sensors (34a-34d), wherein the beam separating element is configured to form a plurality of sub-beams (24a-24d) from the incident laser beam (24), a first sub-beam being directed towards a first sensor of the plurality of sensors and a second sub-beam being directed towards a second sensor of the plurality of sensors, wherein relative intensities of the first and second sub-beams are determined by a spatial position at which the incident laser beam is incident upon the beam separating element.

Abstract: A laser beam monitoring system configured to monitor an attribute of an incident laser beam (24), the laser beam monitoring system comprising a beam separating element (30) and a plurality of sensors (34a-34d), wherein the beam separating element is configured to form a plurality of sub-beams (24a-24d) from the incident laser beam (24), a first sub-beam being directed towards a first sensor of the plurality of sensors and a second sub-beam being directed towards a second sensor of the plurality of sensors, wherein relative intensities of the first and second sub-beams are determined by a spatial position at which the incident laser beam is incident upon the beam separating element.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: A radiation source (e.g., LPP—laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: A lithographic apparatus includes an illumination system for providing a beam of extreme ultra-violet radiation, a masking device for controlling the illumination of a patterning device by the beam of radiation, a support for supporting the patterning device, the patterning device configured to impart a pattern to the beam of radiation, a substrate table for holding a substrate, and a projection system for projecting the patterned beam of radiation onto a target portion of the substrate. The masking device includes a masking blade including a masking edge configured to delimit a boundary of an illumination region on the patterning device. The masking blade is configured to reflect extreme ultra-violet radiation incident on the masking blade such that at least a portion of the reflected radiation is not captured by the projection system.

Abstract: A lithographic apparatus includes an illumination system, support constructed to support patterning device, a projection system, an interferometric sensor and a detector. The interferometric sensor is designed to measure one or more wavefronts of a radiation beam projected by the projection system from an adjustable polarizer. The interferometric sensor includes a diffractive element disposed at a level of a substrate in the lithographic apparatus and a detector spaced apart from the diffractive element, the diffractive element being arranged to provide shearing interferometry between at least two wavefronts mutually displaced in a direction of shear. The detector is designed to determine, from the wavefront measurements, information on polarization affecting properties of the projection system.

Abstract: A radiation source (e.g., LPP— laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Abstract: A lithographic apparatus is disclosed that is configured to project a patterned beam of radiation onto a target portion of a substrate, the lithographic apparatus including an illumination system configured to condition a beam of radiation, the illumination system having a uniformity correction system located in a plane which, in use, is illuminated with a substantially constant pupil by the illumination system.

Abstract: EUV exposure dose in a lithographic apparatus is controlled pulse to pulse by varying a conversion efficiency with which a pulse of EUV radiation is generated from an excitation of a fuel material by a corresponding pulse of excitation laser radiation. Conversion efficiency can be varied in several different ways, by varying the proportion of a fuel material that intersects a laser beam, and/or by varying a quality of the interaction. Mechanisms to vary the conversion efficiency can be based on variation of a laser pulse timing, variation of pre-pulse energy, and/or variable displacement of a main laser beam in one or more directions. Steps to maintain symmetry of the generated EUV radiation can be included.

Abstract: A lithographic apparatus includes a radiation system having reflective optical elements constructed and arranged to condition a beam of radiation. The reflective optical elements include a first faceted mirror constructed and arranged to generate a plurality of source images on a second mirror. The lithographic apparatus also includes a facet mask constructed and arranged to selectively mask one or more of the facets of the first faceted mirror. The facet mask includes a masking blade selectively interposable into the beam.

Abstract: A lithographic apparatus includes an illumination system for providing a beam of extreme ultra-violet radiation, a masking device for controlling the illumination of a patterning device by the beam of radiation, a support for supporting the patterning device, the patterning device configured to impart a pattern to the beam of radiation, a substrate table for holding a substrate, and a projection system for projecting the patterned beam of radiation onto a target portion of the substrate. The masking device includes a masking blade including a masking edge configured to delimit a boundary of an illumination region on the patterning device. The masking blade is configured to reflect extreme ultra-violet radiation incident on the masking blade such that at least a portion of the reflected radiation is not captured by the projection system.

Abstract: An illuminator for a lithographic apparatus, the illuminator including an illumination mode defining element and a plurality of polarization modifiers, the polarization modifiers being moveable into or out of partial intersection with a radiation beam having an angular and spatial distribution as governed by an illumination mode defining element.

Abstract: A lithographic apparatus includes a polarization changing element including at least two wedge-shaped optically active members configured to rotate the polarization direction of at least a portion of the radiation beam with a predetermined angle with respect to the first direction and an optical propagation length adaptor associated with the wedge-shaped optically active members to adjust the predetermined angle.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a polarization sensor configured at least in part to couple to a reticle stage, wherein components of the reticle polarization sensor can be loaded and unloaded in the lithographic apparatus in the manner used for conventional reticles. In one configuration an active reticle tool includes a rotatable retarder configured to vary the retardation applied to polarized light received from a field point in the illumination system. In another configuration, a passive reticle tool is configured as an array of polarization sensor modules, where the amount of retardation applied to received light by fixed retarders varies according to position of the polarization sensor module. Accordingly, a plurality of retardation conditions for light received at a given field point can be measured, wherein a complete determination of a polarization state of the light at the given field point can be determined.