Abstract: An imaging lens assembly includes a plastic barrel and an optical element set. The optical element set includes an optical lens element, a light blocking sheet and a light-shielding layer. At least one surface of an object-side peripheral surface and an image-side peripheral surface of the optical lens element includes an annular side wall. An annular abutting surface of the light blocking sheet and the annular side wall of the optical lens element are disposed correspondingly to each other. The light-shielding layer surrounds a central opening of the light blocking sheet and includes an annular concave-curved portion. The annular concave-curved portion is for retaining the light blocking sheet, so that there is no relative displacement in a direction parallel to an optical axis between the annular abutting surface of the light blocking sheet and the annular side wall of the optical lens element.

Abstract: An imaging lens assembly includes a first optical element and a low-reflection layer. The first optical element has a central opening, and includes a first surface, a second surface and a first outer diameter surface. The first outer diameter surface is connected to the first surface and the second surface. The low-reflection layer is located on at least one of the first surface and the second surface, and includes a carbon black layer, a nano-microstructure and a coating layer. The nano-microstructure is directly contacted with and connected to the carbon black layer, and the nano-microstructure is farther from the first optical element than the carbon black layer from the first optical element. The coating layer is directly contacted with and connected to the nano-microstructure, and the coating layer is farther from the first optical element than the nano-microstructure from the first optical element.

Abstract: An imaging lens assembly includes a first optical element and a low-reflection layer. The first optical element has a central opening, and includes a first surface, a second surface and a first outer diameter surface. The first outer diameter surface is connected to the first surface and the second surface. The low-reflection layer is located on at least one of the first surface and the second surface, and includes a carbon black layer, a nano-microstructure and a coating layer. The nano-microstructure is directly contacted with and connected to the carbon black layer, and the nano-microstructure is farther from the first optical element than the carbon black layer from the first optical element. The coating layer is directly contacted with and connected to the nano-microstructure, and the coating layer is farther from the first optical element than the nano-microstructure from the first optical element.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A thin film silicon layer is then formed on the substrate by a silicon thin film deposition process. A heating treatment is then applied to the substrate so as to convert the thin film silicon layer into a thin film poly silicon layer. A method of forming a thin film transistor includes following steps. A first patterning process is performed on the thin film poly silicon layer on the substrate to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

Abstract: A touch panel includes a first substrate and a first composite material conductive layer. The first composite material conductive layer has a first multilayer structure. The first multilayer structure includes a first refraction index compensating layer, a second refraction index compensating layer, and a first metal conductive layer. The first refraction index compensating layer, the first metal conductive layer, and the second compensation layer are stacked on the first substrate, and an equivalent refraction index of the first composite material conductive layer is substantially between a refraction index of the first substrate and 1.1 times the refraction index of the first substrate.

Abstract: A liquid crystal display (LCD) panel includes a first substrate, a second substrate and a liquid crystal layer. The first substrate includes a first rubbing alignment layer and a first photo-induced polymer alignment layer. The second substrate is disposed opposite to the first substrate, and includes a second photo-induced polymer alignment layer. The liquid crystal layer is disposed between the first and second substrates, and contacts the photo-induced polymer alignment layers.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. The substrate has a first surface. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon thin film deposition process.

Abstract: A thin film probe card includes a plate and a plurality of wires on the plate, each of which is electrically connected with at least a thin film probe. A plurality of elastic members are provided between the probes, which absorbs the force of the probes in the test to protect the probes from wear and extend the product life of the probe card.

Abstract: The present invention includes a substrate with a glass plate, a plurality of oxide wires on the glass plate and a plurality of flip chip bumps on the oxide wires and an integrated circuit chip with a plurality of bump pads. The substrate and the integrated circuit chip are hot pressed with a predetermined bonding pressure and temperature to bond the bump pads to the flip chip bumps respectively by eutectic bonding.

Abstract: A thin film probe card includes a plate and a plurality of wires on the plate, each of which is electrically connected with at least a thin film probe. A plurality of elastic members are provided between the probes, which absorbs the force of the probes in the test to protect the probes from wear and extend the product life of the probe card.

Abstract: The present invention provides an electronic device with a conductive connection structure, which has a substrate with conductive media thereon. The conductive media are electrically connected to conductive saliences respectively. These saliences are electrically connected to other electronic devices directly or indirectly. Each of the saliences has a space therein and at least a hollow portion communicated with the space. The spaces provide the saliences with a capacity of deformation. Glue can be filled in the spaces to reinforce the bonding strength.

Abstract: A soft thin laminated substrate including a plastic substrate, an alloy copper layer overlaid on the plastic substrate and a copper foil overlaid on the alloy copper layer. The alloy copper layer is an alloy of copper metal and at least one of nickel, chromium, manganese, molybdenum, iron and phosphorus. The alloy copper layer serves as a tie-coating of the copper foil, whereby the copper foil can tightly attach to the alloy copper layer to associate with the plastic substrate and form the soft thin laminated substrate.

Abstract: Damping and muffling structure for EL cell includes a transparent substrate, a front electrode layer, a lighting layer, an inducing layer and an insulating layer that are sequentially overlaid on the substrate. A back electrode layer and a conductive member are laid on the inducing layer. The conductive member is adjacent to the back electrode layer without contacting therewith. The conductive member is laid on both the inducing layer and the front electrode layer to electrically connect the inducing layer with the front electrode layer. The front electrode layer is connected to a grounding electrode of the driving circuit, whereby the conductive member can quickly remove the charge accumulating on the inducing layer so as to minify or even eliminate the vibration and noise of the EL cell.

Abstract: Damping and muffling structure for EL cell includes a transparent substrate, a front electrode layer and a lighting layer. The front electrode layer and lighting layer are sequentially overlaid on the substrate. An inducing layer and at least one conductive layer are laid on the lighting layer. A back electrode layer is laid on the inducing layer. The conductive layer is laid on the lighting layer in such a position as not to affect light emitting of the lighting region. The conductive layer is also laid on at least one side between both the lighting layer and the inducing layer and connected with the back electrode layer to electrically connect the inducing layer with the back electrode layer. The back electrode layer is connected to a grounding electrode, whereby the conductive layer can quickly remove the charge accumulating on the inducing layer.

Abstract: Damping and muffling structure for EL cell includes a transparent substrate, a front electrode layer, a lighting layer, an inducing layer and an insulating layer that are sequentially overlaid on the substrate. A back electrode layer and a conductive member are laid on the inducing layer. The conductive member is adjacent to the back electrode layer without contacting therewith. The conductive member is laid on both the inducing layer and the front electrode layer to electrically connect the inducing layer with the front electrode layer. The front electrode layer is connected to a grounding electrode of the driving circuit, whereby the conductive member can quickly remove the charge accumulating on the inducing layer so as to minify or even eliminate the vibration and noise of the EL cell.