Patents by Inventor Heng-Yong Nie

Heng-Yong Nie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9113544
    Abstract: A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: August 18, 2015
    Assignee: HL SCIENCE & TECHNOLOGY LIMITED
    Inventors: Leo W. M. Lau, De-Quan Yang, Tomas Trebicky, Heng Yong Nie
  • Patent number: 8648336
    Abstract: Method for growing multilayer polymer based hetexjunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: February 11, 2014
    Assignee: The University of Western Ontario
    Inventors: Leo W. M. Lau, Tomas Trebicky, Heng Yong Nie
  • Publication number: 20120061558
    Abstract: A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio.
    Type: Application
    Filed: March 3, 2010
    Publication date: March 15, 2012
    Applicant: THE UNIVERSITY OF WESTERN ONTARIO
    Inventors: Leo W.M. Lau, De-Quan Yang, Tomas Trebicky, Heng Yong Nie
  • Publication number: 20120056167
    Abstract: Method for growing multilayer polymer based heterojunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods. In one embodiment, a hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times of the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is easily controllable by the hydrogen pressure in the drift zone, and by the length of the drift zone.
    Type: Application
    Filed: March 3, 2010
    Publication date: March 8, 2012
    Applicant: THE UNIVERSITY OF WESTERN ONTARIO
    Inventors: Leo W.M. Lau, Tomas Trebicky, Heng Yong Nie
  • Publication number: 20080075885
    Abstract: Method of controlling the morphology of self-assembled monolayers (SAMS) on substrates having hydrophilic surfaces. The hydrophilic surface is exposed to a fluid having a mixture of molecules which can self-assemble on the hydrophilic surface and hydrophobic molecules for a sufficient length of time so that the molecules which can self-assemble on the hydrophilic surface form a complete self-assembled monolayer. In a particular embodiment octadecylphosphonic acid (OPA) molecules have been self-assembled on oxidized substrates including but not limited to mica, silicon, sapphire, quartz and aluminum by spin-coating a solution containing the octadecylphosphonic acid (OPA) molecules and hydrophobic molecules such as chloroform or trichloroethylene under a controlled relative humidity. Control of the morphology of OPA SAMs is affected by adjusting humidity and the duration of spin-coating. Atomic force microscopy revealed that relative humidity has a profound influence on the morphology of the OPA SAMs formed.
    Type: Application
    Filed: August 17, 2004
    Publication date: March 27, 2008
    Inventors: Heng-Yong Nie, Mary Jane Walzak, Stewart N. McIntyre
  • Publication number: 20070212808
    Abstract: A scanning probe based method to selectively remove self-assembled organic molecules from their self-assembled monolayer (SAM) prepared on a conducting/semiconducting substrate having a hydrophilic surface. This technique involves the use of a conductive probe tip scanning a SAM with a thickness of not more than a few nanometers under an electric field applied by the scanning tip with a field strength of about 109 V/m between the tip and the surface of the conducting/semiconducting substrate. The patterned SAM can be used a device mould for the development of a nano-lithography technology or a device element in the fabrication of a nano-device. The present invention accommodates the trend of ever-decreasing size of devices.
    Type: Application
    Filed: March 9, 2007
    Publication date: September 13, 2007
    Inventors: Heng-Yong Nie, N. McIntyre, Leo Lau