Abstract: There is provided a magnet apparatus for generating a high gradient and/or high strength magnetic field. The magnet apparatus comprises: a first plurality of magnets (110) disposed in a first layer (101) and generating a first magnetic field. Each magnet (110) of the first plurality is adjacent at least one other magnet (110) of the first plurality, and each magnet of the first plurality has a magnetic field polarity (120) that is rotated with respect to that of the adjacent magnet (110) of the first plurality. The magnet apparatus also comprises a second plurality of magnets (140) disposed in a second layer (102) and generating a second magnetic field. Each magnet (140) of the second plurality is adjacent a magnet (110) of the first plurality, and each magnet (140) of the second plurality has a magnetic field polarity (120) that is rotated with respect to that of the closest magnet (140) of the second plurality.

Abstract: A magnet apparatus for generating a high gradient and/or high strength magnetic field, comprises: two main permanent magnets 2, 4 located side-by-side with oppositely oriented magnetic field polarities and end surfaces of opposite polarities next to one another, wherein the magnetic anisotropy of the magnets 2, 4 exceeds the magnetic induction of the material of the magnets 2, 4; and at least one mask 6 on a first end of each of the adjacent permanent magnets 2, 4, the masks 6 comprising a permanent magnet material covering adjacent end surfaces of the two permanent magnets 2, 4 with a gap 8 in the masks along a joining line between the two permanent magnets 2, 4 to form a zone of high-gradient magnetic field above the joining line; wherein the permanent magnet of each mask 6 is oriented with an opposite polarity to the main permanent magnet 2, 4 that it is attached to.

Abstract: A magnet apparatus for generating a high gradient and/or high strength magnetic field, comprises: two permanent magnets (2, 4) located side-by-side with oppositely oriented magnetic field polarities and end surfaces of opposite polarities next to one another, wherein the magnetic anisotropy of the magnets exceeds the magnetic induction of the material of the magnets; and a mask (6) or masks (6) on a first end of each of the adjacent permanent magnets (2, 4), the mask(s) 6 comprising a non-retentive material covering adjacent end surfaces of the two permanent magnets (2, 4) with a gap (8) along a joining line between the two permanent magnets (2, 4) to form a zone of high-gradient magnetic field above the joining line; wherein the mask(s) (6) are embedded within the magnets (2, 4) and/or have a varying thickness and wherein the mask(s) (6) each have a maximum thickness greater than a tenth of the thickness of the respective magnet (2, 4).

Abstract: A magnet apparatus for generating a high gradient and/or high strength magnetic field, comprises: two main permanent magnets 2, 4 located side-by-side with oppositely oriented magnetic field polarities and end surfaces of opposite polarities next to one another, wherein the magnetic anisotropy of the magnets 2, 4 exceeds the magnetic induction of the material of the magnets 2, 4; and at least one mask 6 on a first end of each of the adjacent permanent magnets 2, 4, the masks 6 comprising a permanent magnet material covering adjacent end surfaces of the two permanent magnets 2, 4 with a gap 8 in the masks along a joining line between the two permanent magnets 2, 4 to form a zone of high-gradient magnetic field above the joining line; wherein the permanent magnet of each mask 6 is oriented with an opposite polarity to the main permanent magnet 2, 4 that it is attached to.

Abstract: A magnet apparatus for generating a high gradient and/or high strength magnetic field, comprises: two permanent magnets (2, 4) located side-by-side with oppositely oriented magnetic field polarities and end surfaces of opposite polarities next to one another, wherein the magnetic anisotropy of the magnets exceeds the magnetic induction of the material of the magnets; and a mask (6) or masks (6) on a first end of each of the adjacent permanent magnets (2, 4), the mask(s) 6 comprising a non-retentive material covering adjacent end surfaces of the two permanent magnets (2, 4) with a gap (8) along a joining line between the two permanent magnets (2, 4) to form a zone of high-gradient magnetic field above the joining line; wherein the mask(s) (6) are embedded within the magnets (2, 4) and/or have a varying thickness and wherein the mask(s) (6) each have a maximum thickness greater than a tenth of the thickness of the respective magnet (2, 4).

Abstract: The invention relates to a method for forming a body comprising a particle structure fixated in a matrix material, comprising—Providing an amount of particles,—Providing a viscous matrix material to include said particles—Forming a particle structure of at least a portion of said amount of particles—Fixating said viscous matrix so as to fixate said particle structure in the matrix material characterised by at least a portion of said amount of particles being paramagnetic or ferromagnetic, and the formation of the particle structure includes the steps of: - Subjecting the particles to a first field, so as to arrange at least a portion of said particles into particle assemblies, each particle assembly comprising a plurality of particles and extending along a flux direction of said first field, and—Subjecting the particle assemblies to a second field, so as to move and/or rotate said particle assemblies along a flux direction of said second field,—wherein one of said first and second fields is a magnetic field,

Abstract: An RF power amplifier including a single piece heat sink and an RF power transistor die mounted directly onto the heat sink.

Abstract: A semiconductor device (7) has gold coatings (1 to 5) which are applied to metallic or ceramic components (6) of the semiconductor device (7). The gold coatings (1 to 4) have a multifunctional multilayer metal coating (8) with a minimal gold layer (9). The gold layer has a thickness dG where dG?0.5 ?m. Moreover, at least one metallic interlayer (10) is arranged between the gold layer (9) and the metallic or ceramic components (6).

Abstract: In a circuit, an integrated circuit package and methods for attaching integrated circuit dies or discrete power components to flanges of integrated circuit packages, each of the integrated circuit dies is sawed from a wafer. The thickness of the wafer is reduced by mechanical grinding, applying an isotropic wet chemical etching to the wafer to eliminate crystal defects, evaporating adhesion and diffusion barrier metals on the backside of the wafer, evaporating Au and Sn on the backside of the wafer, wherein the weight proportion of Au is equal to or larger than 85%, sawing the wafer into the circuit dies, and soldering each of the circuit dies to a respective flange of an integrated circuit package.

Abstract: An RF power amplifier including a single piece heat sink and an RF power transistor die mounted directly onto the heat sink.

Abstract: In a circuit, an integrated circuit package and methods for attaching integrated circuit dies or discrete power components to flanges of integrated circuit packages, each of the integrated circuit dies is sawed from a wafer. The thickness of the wafer is reduced by mechanical grinding, applying an isotropic wet chemical etching to the wafer to eliminate crystal defects, evaporating adhesion and diffusion barrier metals on the backside of the wafer, evaporating Au and Sn on the backside of the wafer, wherein the weight proportion of Au is equal to or larger than 85%, sawing the wafer into the circuit dies, and soldering each of the circuit dies to a respective flange of an integrated circuit package.

Abstract: A semiconductor device (7) has gold coatings (1 to 5) which are applied to metallic or ceramic components (6) of the semiconductor device (7). The gold coatings (1 to 4) have a multifunctional multilayer metal coating (8) with a minimal gold layer (9). The gold layer has a thickness dG where dG?0.5 ?m. Moreover, at least one metallic interlayer (10) is arranged between the gold layer (9) and the metallic or ceramic components (6).

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) power package includes a conductive mounting flange mounted on a heat sink and electrically connected to a dielectric substrate of a printed circuit board. A plurality of transistors are mounted on the top surface of the mounting flange. Each of the transistors has an input terminal, an output terminal, and a ground terminal, with the ground terminal of each transistor being electrically coupled to the top surface of the mounting flange. A plurality of parallel ground signal return paths are provided to electrically couple the top surface of the mounting flange to the dielectric substrate, thereby reducing resistance and inductance in the ground signal path and increasing the efficiency of the power package.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) power package includes a conductive mounting flange mounted on a heat sink and electrically connected to a dielectric substrate of a printed circuit board. A plurality of transistors are mounted on the top surface of the mounting flange. Each of the transistors has an input terminal, an output terminal, and a ground terminal, with the ground terminal of each transistor being electrically coupled to the top surface of the mounting flange. A plurality of parallel ground signal return paths are provided to electrically couple the top surface of the mounting flange to the dielectric substrate, thereby reducing resistance and inductance in the ground signal path and increasing the efficiency of the power package.

Abstract: An LDMOS power package includes a mounting substrate having a surface with one or more alignment pedestals extending therefrom. Each alignment pedestal has a mounting surface facing away from the substrate surface to provide for uniform positioning of various semiconductor elements, e.g., a transistor die or impedance matching capacitors, relative to the substrate surface. The respective pedestal mounting surfaces are preferably conductive, and are electrically coupled to the flange surface, so as to electrically couple the respective capacitor and electrode ground terminals to the flange.