Patents by Inventor Henry Hieslmair

Henry Hieslmair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9875922
    Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: January 23, 2018
    Assignee: INTEVAC, INC.
    Inventors: Terry Pederson, Henry Hieslmair, Moon Chun, Vinay Prabhakar, Babak Adibi, Terry Bluck
  • Publication number: 20160322523
    Abstract: A photovoltaic cell having a graded doped region such as a graded emitter and methods of making photovoltaic cells having graded doped regions such as a graded emitter are disclosed. Doping is adjusted across a surface to minimize resistive (I2R) power losses. The graded emitters provide a gradual change in sheet resistance over the entire distance between the lines. The graded emitter profile may have a lower sheet resistance near the metal lines and a higher sheet resistance farther from the metal line edges. The sheet resistance is graded such that the sheet resistance is lower where I2R power losses are highest due to current crowding. One advantage of graded emitters over selective emitters is improved efficiency. An additional advantage of graded emitters over selective emitters is improved ease of aligning metallization to the low sheet resistance regions.
    Type: Application
    Filed: July 12, 2016
    Publication date: November 3, 2016
    Inventors: Henry Hieslmair, Babak Adibi
  • Publication number: 20160233122
    Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.
    Type: Application
    Filed: April 14, 2016
    Publication date: August 11, 2016
    Inventors: Terry Pederson, Henry Hieslmair, Moon Chun, Vinay Prabhakar, Babak Adibi, Terry Bluck
  • Patent number: 9343606
    Abstract: Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.
    Type: Grant
    Filed: October 31, 2012
    Date of Patent: May 17, 2016
    Assignee: NanoGram Corporation
    Inventor: Henry Hieslmair
  • Patent number: 9324598
    Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: April 26, 2016
    Assignee: INTEVAC, INC.
    Inventors: Terry Pederson, Henry Hieslmair, Moon Chun, Vinay Prabhakar, Babak Adibi, Terry Bluck
  • Patent number: 8853527
    Abstract: Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.
    Type: Grant
    Filed: February 15, 2008
    Date of Patent: October 7, 2014
    Assignee: NanoGram Corporation
    Inventor: Henry Hieslmair
  • Publication number: 20140166087
    Abstract: A photovoltaic cell having a graded doped region such as a graded emitter and methods of making photovoltaic cells having graded doped regions such as a graded emitter are disclosed. Doping is adjusted across a surface to minimize resistive (I2R) power losses. The graded emitters provide a gradual change in sheet resistance over the entire distance between the lines. The graded emitter profile may have a lower sheet resistance near the metal lines and a higher sheet resistance farther from the metal line edges. The sheet resistance is graded such that the sheet resistance is lower where I2R power losses are highest due to current crowding. One advantage of graded emitters over selective emitters is improved efficiency. An additional advantage of graded emitters over selective emitters is improved ease of aligning metallization to the low sheet resistance regions.
    Type: Application
    Filed: December 18, 2012
    Publication date: June 19, 2014
    Applicant: INTEVAC, INC.
    Inventors: Henry Hieslmair, Babak Adibi
  • Publication number: 20140138135
    Abstract: Highly uniform silicon/germanium nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silicon/germanium particles can be surface modified to form the dispersions. The silicon/germanium nanoparticles can be doped to change the particle properties. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to form selectively doped deposits of semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Application
    Filed: December 31, 2013
    Publication date: May 22, 2014
    Applicant: NanoGram Corporation
    Inventors: Henry Hieslmair, Vladimir K. Dioumaev, Shivkumar Chiruvolu, Hui Du
  • Publication number: 20140106551
    Abstract: Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.
    Type: Application
    Filed: December 16, 2013
    Publication date: April 17, 2014
    Applicant: NanoGram Corporation
    Inventors: Uma Srinivasan, Xin Zhou, Henry Hieslmair, Neeraj Pakala
  • Patent number: 8691694
    Abstract: In order to better and more efficiently assemble back contact solar cells into modules, the cell to cell soldering and other soldered connections are replaced by electro and/or electroless plating. Back contact solar cells, diodes and external leads can be first laminated to the module front glass for support and stability. Conductive materials are deposited selectively to create a plating seed pattern for the entire module circuit. Subsequent plating steps create an integrated cell and module metallization. This avoids stringing and tabbing and the associated soldering steps. This process is easier for mass manufacturing and is advantageous for handling fragile silicon solar cells. Additionally, since highly corrosion resistant metals can be plated, the moisture barrier requirements of the back side materials can be greatly relaxed. This can simplify and reduce the cost of the back side of the module.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: April 8, 2014
    Inventor: Henry Hieslmair
  • Patent number: 8632702
    Abstract: Highly uniform silicon/germanium nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silicon/germanium particles can be surface modified to form the dispersions. The silicon/germanium nanoparticles can be doped to change the particle properties. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to form selectively doped deposits of semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Grant
    Filed: January 2, 2008
    Date of Patent: January 21, 2014
    Assignee: NanoGram Corporation
    Inventors: Henry Hieslmair, Vladimir K. Dioumaev, Shivkumar Chiruvolu, Hui Du
  • Patent number: 8409976
    Abstract: Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: April 2, 2013
    Assignee: NanoGram Corporation
    Inventor: Henry Hieslmair
  • Patent number: 8399878
    Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silica particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: March 19, 2013
    Assignee: NanoGram Corporation
    Inventors: Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
  • Publication number: 20120318168
    Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silica particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Application
    Filed: August 27, 2012
    Publication date: December 20, 2012
    Inventors: Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
  • Publication number: 20120227810
    Abstract: Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.
    Type: Application
    Filed: May 17, 2012
    Publication date: September 13, 2012
    Inventor: Henry Hieslmair
  • Patent number: 8263423
    Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Grant
    Filed: July 26, 2011
    Date of Patent: September 11, 2012
    Assignee: NanoGram Corporation
    Inventors: Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
  • Publication number: 20120180862
    Abstract: A photovoltaic module having non-contacting bus bars and methods of making non-contacting bus bars are disclosed. The fingers are screen printed on the substrate using a paste. The bus bar(s) can be formed over the fingers using a number of techniques that do not dissolve through the passivation layer of the substrate. The bus bar(s) can be screen printed over the fingers using a second paste that is more viscous and/or conductive than the first paste. The bus bar(s) can be a conductive trace that is deposited over the fingers. The bus bar(s) can be a metal wire coated with solder or paste that is positioned on the fingers. Metal plating techniques may also be used to thicken the fingers and/or bus bars. One or more doping steps may be used to form selective emitters under the fingers and bus bar.
    Type: Application
    Filed: January 13, 2012
    Publication date: July 19, 2012
    Inventor: Henry HIESLMAIR
  • Publication number: 20110281390
    Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Application
    Filed: July 26, 2011
    Publication date: November 17, 2011
    Inventors: Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
  • Patent number: 7993947
    Abstract: Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: August 9, 2011
    Assignee: NanoGram Corporation
    Inventors: Henry Hieslmair, Shivkumar Chiruvolu, Hui Du
  • Publication number: 20110162703
    Abstract: A method of fabricating a solar cell comprising: providing a semiconducting wafer having a front surface, a back surface, and a background doped region; performing a set of ion implantations of dopant into the semiconducting wafer to form a back alternatingly-doped region extending from the back surface of the semiconducting wafer to a location between the back surface and the front surface, wherein the back doped region comprises laterally alternating first back doped regions and second back doped regions, and wherein the first back doped regions comprise a different charge type than the second back doped regions and the background doped region; and disposing a back metal contact layer onto the back surface of the semiconducting wafer, wherein the back metal contact layer is aligned over the first and second back doped regions and is configured to conduct electrical charge from the first and second back doped regions.
    Type: Application
    Filed: March 19, 2010
    Publication date: July 7, 2011
    Applicant: SOLAR IMPLANT TECHNOLOGIES, INC.
    Inventors: Babak Adibi, Edward S. Murrer, Henry Hieslmair