Patents by Inventor Henry L. Aldridge, JR.

Henry L. Aldridge, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit structure with semiconductor-based isolation structure and methods to form same
    Patent number: 11710655
    Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: July 25, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Anthony K. Stamper, Henry L. Aldridge, Jr., Johnatan A. Kantarovsky, Jeonghyun Hwang
  • INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR-BASED ISOLATION STRUCTURE AND METHODS TO FORM SAME
    Publication number: 20220044960
    Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.
    Type: Application
    Filed: October 20, 2021
    Publication date: February 10, 2022
    Inventors: Anthony K. Stamper, Henry L. Aldridge, JR., Johnatan A. Kantarovsky, Jeonghyun Hwang
  • HETEROJUNCTION BIPOLAR TRANSISTOR
    Publication number: 20210384297
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a first semiconductor layer including a device region; a second semiconductor layer under the first semiconductor layer; a layer of conductive material between the first semiconductor layer and the second semiconductor layer; at least one contact extending to and contacting the layer of conductive material; and a device in the device region above the layer of conductive material.
    Type: Application
    Filed: June 5, 2020
    Publication date: December 9, 2021
    Inventors: Henry L. ALDRIDGE, JR., Anthony K. STAMPER, Jeonghyun HWANG, Johnatan A. KANTAROVSKY
  • Heterojunction bipolar transistor
    Patent number: 11177345
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a first semiconductor layer including a device region; a second semiconductor layer under the first semiconductor layer; a layer of conductive material between the first semiconductor layer and the second semiconductor layer; at least one contact extending to and contacting the layer of conductive material; and a device in the device region above the layer of conductive material.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: November 16, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Henry L. Aldridge, Jr., Anthony K. Stamper, Jeonghyun Hwang, Johnatan A. Kantarovsky
  • Integrated circuit structure with semiconductor-based isolation structure and methods to form same
    Patent number: 11177158
    Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: November 16, 2021
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Anthony K. Stamper, Henry L. Aldridge, Jr., Johnatan A. Kantarovsky, Jeonghyun Hwang
  • INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR-BASED ISOLATION STRUCTURE AND METHODS TO FORM SAME
    Publication number: 20210265198
    Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.
    Type: Application
    Filed: February 25, 2020
    Publication date: August 26, 2021
    Inventors: Anthony K. Stamper, Henry L. Aldridge, JR., Johnatan A. Kantarovsky, Jeonghyun Hwang