Abstract: A multilevel interconnect structure which has a first horizontal metallic conductor disposed on the top of a previously formed first contact/via dielectric where the contact/via dielectric contains a contact/via hole. A horizontal interconnect is deposited over the first contact/via dielectric and has a first surface defined by the thickness and linewidth of the horizontal interconnect. A vertical metallic conductor is deposited in the contact/via hole to form a contact/via plug which extends through the dielectric and contacts the first surface of the horizontal interconnect. The process may be used to form additional levels and to form a plurality of similar horizontal and vertical metallic interconnects.

Abstract: A self-aligned thin-film ceramic oxide stacked capacitor on an underlying semiconductor substrate using a spin-on ceramic oxide fabricated by forming conductive pillars and the lower electrode, forming a temporary layer, building up the semiconductor substrate around the temporary layer, removing the temporary layer, and then spinning on the ceramic oxide. This results in a ceramic oxide stacked capacitor with the conformal thin-film ceramic oxide encapsulated by the top electrode.

Abstract: Electrical connections to specified semiconductor or electrically conductive portions (18, 26, and 30) of a structure created from a semiconductive body (10) are created by a process in which a titanium contact layer (34) is deposited on the structure over the specified portions. An electrically conductive barrier material layer (36) which consists principally of non-titanium refractory material is formed over the contact layer. The resulting structure is then annealed at a temperature above 550.degree. C. in order to lower the contact resistance. The anneal is preferably done at 600.degree. C. or more for 10-120 seconds in a gas whose principal constituent is nitrogen. An electrically conductive primary interconnect layer is formed over the barrier material layer after which all three layers are patterned to create a composite interconnect layer.