Patents by Inventor Heo-ju Shin

Heo-ju Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory device including phase-change material
    Patent number: 8299450
    Abstract: A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001?A?0.3, 0.001?X?0.3, 0.001?Y?0.8, 0.1?Z?0.8, and X+Y+Z=1.
    Type: Grant
    Filed: February 1, 2010
    Date of Patent: October 30, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-ho Ahn, Hideki Horii, Soon-oh Park, Young-hyun Kim, Heo-ju Shin, Jin-ho Oh
  • NON-VOLATILE MEMORY DEVICE INCLUDING PHASE-CHANGE MATERIAL
    Publication number: 20110049459
    Abstract: A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001?A?0.3, 0.001?X?0.3, 0.001?Y?0.8, 0.1?Z?0.8, and X+Y+Z=1.
    Type: Application
    Filed: February 1, 2010
    Publication date: March 3, 2011
    Applicants: SAMSUNG ELECTRONICS CO., LTD., OVONYX, INC.
    Inventors: Dong-ho Ahn, Hideki Horii, Soon-oh Park, Young-hyun Kim, Heo-ju Shin, Jin-ho Oh