Abstract: A semiconductor device includes a gate stacked structure including gate patterns and insulating patterns that are alternately stacked with each other; a gate insulating layer on a sidewall of the gate stacked structure; a channel layer surrounded by the gate insulating layer; a source line surrounded by the channel layer; a variable resistive layer surrounded by the channel layer; and a drain line surrounded by the channel layer.

Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: An embodiment of the present specification provides a method for preparing a catalyst for preparing a carbon nanotube, comprising: (a) dissolving a main catalyst precursor, a support precursor, a cocatalyst precursor and a precipitation inhibitor in a solvent to prepare a precursor solution; and (b) pyrolyzing the precursor solution by spraying the precursor solution into a reactor, wherein a mole fraction of the precipitation inhibitor to the cocatalyst precursor is 0.1 to 1.5.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: The present application can provide a preparation method that can effectively produce a polymer having desired molecular weight characteristics and solubility in a solvent, and having a monomer composition, which is designed freely and variously according to the purpose, without unnecessary components with excellent polymerization efficiency and conversion rates, and a dispersion comprising the polymer formed by the preparation method.

Abstract: A control apparatus of an electric vehicle includes a twin clutch including a first clutch and a second clutch and configured to adjust power transmission from a drive motor to a first rear wheel and a second rear wheel of the vehicle through the first clutch corresponding to the first rear wheel and the second clutch corresponding to the second rear wheel, a vehicle controller electrically connected to the drive motor and configured to, when an entering condition for entering an oversteer mode is satisfied, determine an initial regenerative braking torque for entering the oversteer mode, determine a target slip ratio of the first and second rear wheels, and control the regenerative braking torque of the drive motor to follow the target slip ratio, and a clutch controller electrically connected to the twin clutch and configured to adjust clutch torques of the first clutch and the second clutch of the twin clutch so that slip ratios of the first and second rear wheels are synchronized.

Abstract: An apparatus for controlling an electric vehicle includes: a twin clutch including first and second clutches and for controlling power supplied from a driving motor to first and second rear wheels through the first clutch and the second clutch; a vehicle controller for calculating a target slip rate of the rear wheels and controlling a regenerative braking torque by the driving motor to follow the target slip rate when an entry condition for entering a drifted driving mode of the vehicle is satisfied; and a clutch controller for controlling the slip rates of the left and right rear wheels to be synchronized by adjusting clutch torques of the first and second clutches of the twin clutch.

Abstract: An electric vehicle includes a drive motor configured for generating power required for driving of the vehicle, a twin clutch which may include a first clutch and a second clutch and configured to adjust distribution of the power supplied from the drive motor to a first drive wheel and a second drive wheel of the vehicle through the first clutch corresponding to the first drive wheel and the second clutch corresponding to the second drive wheel, and a controller electrically connected to the twin clutch and configured to, when a control condition for a deceleration turning of the vehicle is satisfied, determine a control torque of the twin clutch as a larger value of an initial torque to prevent slip of the twin clutch and a base torque determined based on output torque of the drive motor, and distribute the control torque to the first clutch and the second clutch depending on a drive mode of the vehicle.

Abstract: A method of controlling an electric vehicle including twin clutches includes twin clutches for the electric vehicle driven by power of a drive motor and includes determining, by a clutch controller, whether a releasing condition for releasing engagement of the twin clutches is satisfied, controlling, by the clutch controller, the twin clutches to 0 torque when the releasing condition is satisfied, controlling the drive motor to 0 rpm by a vehicle controller when a torque applied to the twin clutches is less than a predetermined torque, and controlling the drive motor to 0 torque when a speed of the drive motor is less than a predetermined speed.

Abstract: An apparatus of controlling a twin clutch includes: a twin clutch that selectively blocks power supplied from a drive motor to a pair of drive wheels of a vehicle; and a clutch controller that is configured to control the twin clutch by determining target torques applied to respective clutches included in the twin clutch, based on the straight-line driving state detected by the driving information detection unit, determining a correction error based on a difference between actual torques applied to the respective clutches included in the twin clutch when a preliminary activation signal, which is determined based on the target torques, is turned on and a main activation signal, which is determined based on the actual torques applied to the respective clutches, is turned on, determining a balancing control compensation amount based on the correction error, and determining a final control amounts applied to the respective clutches based on the balancing control compensation amount.

Abstract: The present specification relates to compounds for inhibiting neovascularization factors and use thereof. Furthermore, the present specification relates to methods for treating neovascularization diseases using the compounds.

Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: A display device includes a plurality of electrode pads which are arranged in a non-display region having a side line of a substrate; a circuit film which includes a plurality of output pads contacting the plurality of electrode pads and extending in a direction, and on which a driving IC is mounted; a plurality of test lines that extend in the direction from the side line; and a plurality of connection lines which connect the plurality of test lines to corresponding electrode pads, wherein each test line is located in a separate region between two output pads adjacent to both sides of each test line.

Abstract: Discussed is a flexible display device to reduce a width of a bezel. The flexible display device includes a substrate being formed of a flexible material, a plurality of gate lines and a plurality of data lines crossing each other, a plurality of pads formed in a pad area of a non-display area, a plurality of links formed in a link area of the non-display area a plurality of insulation films formed over the entire surface of the substrate, and a first bending hole formed in a bending area of the non-display area, the first bending hole passing through at least one of the insulation films disposed under the link, wherein the bending area is bent such that the pads are disposed on the lower surface of the substrate.

Abstract: Discussed is a flexible display device to reduce a width of a bezel. The flexible display device includes a substrate being formed of a flexible material, a plurality of gate lines and a plurality of data lines crossing each other, a plurality of pads formed in a pad area of a non-display area, a plurality of links formed in a link area of the non-display area a plurality of insulation films formed over the entire surface of the substrate, and a first bending hole formed in a bending area of the non-display area, the first bending hole passing through at least one of the insulation films disposed under the link, wherein the bending area is bent such that the pads are disposed on the lower surface of the substrate.