Abstract: A process for forming a field-effect-transistor structure upon a silicon substrate includes the steps of sequentially depositing a polysilicon layer and a refractory metal silicide layer over a gate oxide and heating the same to form a polycide gate structure. After etching the polycide composite layer to define the gate, spacer oxide layers are formed to cover the lateral edges of the gate structure, and a transition metal layer is deposited over the bare polycide composite layer and the surrounding bare source and drain diffused silicon regions. The deposited transition metal layer is annealed to react with the polycide in the gate structure and thereby lower the sheet resistance of the gate. The transition metal also reacts with the source and drain regions to form silicides for lowering the sheet resistance of the source and drain regions.