Abstract: A heterojunction tunnel diode with first and second barrier layers, the first barrier layer including aluminum antimonide arsenide. A quantum well formation is sandwiched between the first and second barrier layers, and includes first and second quantum well layers with a barrier layer sandwiched therebetween, the first quantum well layer being adjacent the first barrier layer. The first quantum well layer is gallium antimonide arsenide which produces a peak in hole accumulations therein. The second quantum well layer produces a peak in electron accumulations therein. A monolayer of gallium antimonide is sandwiched in the first quantum well layer at the peak in hole accumulations and a monolayer of indium arsenide is sandwiched in the second quantum well layer at the peak in electron accumulations.

Abstract: An enhanced conductivity superlattice structure is provided in which a phonon generator embedded in a quantum well promotes formation of paired electrons. The superlattice structure provides electrons confined in a narrow energy gap material which is sandwiched between two barrier layers made of larger bandgap material. The electrons are provided to the quantum well by doping material in the barrier layers to provide modulation doping of the qnantum well. The quantum well contains at least one monolayer of another material within its boundaries which is a source of phonons which are generated for the purpose of electron-phonon coupling in order to cause electron pairing. In a preferred embodiment a plurality of phonon generator monolayers will be provided in the center of a quantum well, wherein the phonon generator monolayers are separated from each other by a few monolayers of quantum well material to provide increased number of phonons and therefore increased number of electron-phonon interactions.