Abstract: A CCD image sensor having a linear array of individual imaging photodetecting cells aligned along a scanning line for sensing light information and converting the light information to charge carriers. A CCD shift register, adjacent to the linear array of photodetecting cells, is used for receiving and temporarily storing the charge carriers generated by the photodetecting cells of the linear array. The CCD shift register has a plurality of CCD cells, each of the photodetecting cells being associated with at least two CCD cells such that there is an imaging CCD cell for receiving the charge carriers from the associated photodetecting cell, and at least one buffer cell for receiving a pre-loaded signal to reduce charge transfer inefficiency of the charge carriers. A pre-loaded signal is injected into the buffer cells of the CCD shift register and all the cells are clocked out such that the pre-loaded buffer cells are clocked through the image cells to improve charge transfer inefficiency characteristics.

Abstract: A method of precisely aligning and fastening a glass cover plate over an image sensor includes the use of first and second sets of spacers arranged so that the glass cover plate is provided on the base plate and the image sensor is provided on the first set of spacers and spaced from a carrier mounted on the second set of spacers. An adhesive secures the glass cover plate to the image sensor as well as the image sensor to the carrier.

Abstract: The present disclosure is directed to an optically operated test structure for a CCD imager for testing for certain components of the imager modulation transfer function. The CCD imager includes a line of imaging photodetectors and a CCD shift register extending along the line of imaging photodetectors. A separate exposure drain region is adjacent each imaging photodetector and an exposure control gate extends between the imaging photodetectors and their respective exposure drain regions. A plurality of test photodetectors are in the line of the imaging photodetectors with at least one imaging photodetector being at each end of the test photodetectors. Each of the test photodetectors has an exposure drain region adjacent thereto, and a test exposure control gate extends between the test photodetectors and their respective exposure drain regions. The test exposure control gate is separate from the exposure control gate for the imaging photodetectors.

Abstract: An image sensor having on a substrate of a first conductivity type an implanted region of a conductivity type opposite to the first conductivity type and an implanted region of the same conductivity type as the substrate, the image sensor comprising a plurality of depleted photosensitive regions in which electric charges are generated, an isolation region being formed between adjacent photosensitive regions to isolate the photosensitive regions from each other. Charge accumulation regions and transfer regions are also provided to transport the electric charges from the photosensitive regions to CCD shift registers. The isolation regions between two depleted photosensitive regions are formed of undepleted regions. The implanted region of the opposite conductivity type is of a smaller width throughout the photosensitive regions than throughout the charge accumulation regions and the transfer regions.

Abstract: The present invention is directed to an image sensor which comprises a body of a semiconductor material having therein a plurality of photodetectors arranged in a line and a CCD shift register extending along the line of photodetectors adjacent to but spaced from an edge of the photodetectors. The CCD shift register includes a channel region and a plurality of first and second gate electrodes extending over and insulated from the channel region. One of each of the first and second gate electrodes extends across a portion of the edge of each photodetector. Each of the first electrodes has an arm extending along the entire edge of its respective photodetector between the photodetector and the second gate electrode. A separate transfer region is in the body between the edge of each photodetector and its respective first electrode and extends along the entire edge of the photodetector. A transfer gate is over and insulated from the transfer regions.

Abstract: An array of linear CCD image sensors comprises first, second and third CCD image sensors arranged in spaced parallel relation on a body of a semiconductor material. Each CCD image sensor comprises a row of photodetectors, a CCD shift register extending along the row of photodetectors and an output circuit at one end of the CCD shift register. All of the output circuits are at a common end of their respective CCD shift registers. Each CCD shift register includes first and second sets of gate electrodes alternating along the CCD shift register. A first bus line connects the first gate electrodes of each CCD shift register and a second bus line electrically connects the second gate electrodes of each CCD shift register. One of the bus lines of the second CCD shift register is electrically connected to a bus line of the first CCD shift register, and the other bus line of the second CCD shift register is electrically connected to a bus line of the third CCD shift register.

Abstract: A charge-coupled device (CCD) of the two-phase type is disclosed. The CCD comprises two polysilicon levels which are electrically connected to form one clock phase. In order to provide a CCD of improved transfer efficiency, two implanted regions of different dopant levels are provided under each polysilicon level. When the CCD is clocked, a four-tier potential profile is produced.

Abstract: An image sensor is disclosed which is adapted to sense a color image and comprises three channels, one for each of the primary colors. Each channel is identical except for the color of the filter associated therewith. In order to provide the optimum exposure time for each of the colors, the integration time for each of the channels is controlled independently. The line readout time for each of the channels is maintained the same, however, so that the three channels can be read out in parallel.

Abstract: An image sensor formed on a P-type substrate includes a plurality of pinned diode photodiodes, a CCD shift register and a separate buried transfer gate located between each of the photodiodes and the CCD shift register. The photodetectors are arranged in at least one line. The CCD shift register extends along the line of photodetectors. Each of the pinned diode photodetectors includes a first region of N-type conductivity in the substrate and a second region of P+ type conductivity in the first region and along the substrate surface. The CCD shift register includes a channel region of N-type conductivity in the substrate surface and two sets of conductive gates along the channel region and insulated from the substrate surface. Each transfer gate includes a transfer channel region of N-type conductivity in the substrate and extending along the substrate surface from the shift register channel region to the first region of its respective photodetector.

Abstract: An image sensor is disclosed which comprises a plurality of image sensor elements arranged in rows and columns. Each of the image sesnor elements includes a a CCD. In order to provide an image sensor which can be used to image in different image formats, the image sensor includes imaging planes on edge surfaces as well as on a top surface. The top and bottom layers of the sensor are of an increased doping level, and these layers serve to guide charge carriers into CCD's located adjacent the edges of the sensor.

Abstract: A charge-coupled imager includes in a substrate of a semiconductor material a plurality of spaced photodetectors arranged in a line. The photodetectors are each of a type that can be completely depleted. A suitable photodetector is a pinned photodiode. A separate accumulation region is contiguous with one side of each of the photodetectors. A potential is applied to each accumulation region which forms an accumulation well therein which is lower than that in its respective photodiode so that charge carriers generated in the photodiode will continuously flow into the accumulation region. An anti-blooming drain is provided adjacent each accumulation region with the potential barrier between the anti-blooming drain and the accumulation region being below the potential well in the photodiode so that when the accumulation region fills with charge carriers to the level of the potential barrier any additional charge carriers will overflow into the anti-blooming drain.

Abstract: A linear sensor composed of substantially like-sized segments generates a high definition television signal from a line scan of a motion picture film. By staggering the linear segments and overlapping adjoining ends thereof, the sampled signal outputs of the several segments can be applied to a series of digital filters that operate independently to provide filtered output signals that can be grouped together without processing artifacts at the crossover points. More particularly, the overlapping regions of the linear segments are configured in relation to the processing kernal required by the digital filters such that contiguous, processed samples on either side of each crossover point are derived from sample strings wholly within a respective linear segment.

Abstract: A CCD imager includes a substrate of a semiconductor material having a plurality of photodetectors therein at a top surface thereof and arranged either in a line or in an array of rows and columns. A CCD shift register is in the substrate along but spaced from one side of the line or each column of photodetectors. Between each photodetector and its adjacent shift register is an accumulation region. A transfer gate is provided between the shift register and its adjacent line or column of accumulation regions. A transfer gate is provided between each line or row of photodetectors and the adjacent accumulation regions. A first anti-blooming drain region is provided along each line or column of photodetectors on the side of the photodetectors opposite the accumulation regions. A separate second anti-blooming drain is provided along a side of each accumulation region in the area of the substrate between the shift register and the photodetectors.

Abstract: A charge-coupled device (CCD) of the two-phase type is disclosed. The CCD comprises two polysilicon levels which are electrically connected to form one clock phase. In order to provide a CCD of improved transfer efficiency, two implanted regions of different dopant levels are provided under each polysilicon level. When the CCD is clocked, a four-tier potential profile is produced.