Abstract: A method for producing a microelectronic component of sandwich construction, which includes the steps of providing a first substrate which has a first conductor track plane, providing a plurality of semiconductor chips which have first contact faces electrically connected to the first conductor track plane, and second contact faces opposite the first sides. The method furthermore includes providing a second substrate which has a second conductor track plane with contact points, securing electrically conductive balls to the contact points of the second conductor track plane using an electrically conductive, flexible adhesive, applying an electrically conductive, flexible adhesive to the second contact faces of the plurality of semiconductor chips, and joining the first substrate and the second substrate together.

Abstract: A microelectronic component of sandwich construction, that includes a first substrate with a first conductor track plane and a second substrate with a second conductor track plane, between which many semiconductor chips are disposed. The contacting of the second conductor track plane to the adjacent surface of the semiconductor chips is effected by fixed contacting means, in particular with the soldered connections, an electrically conductive adhesive, or electrically conductive balls. The microelectronic components of the invention are suitable in particular as power components and can be used for instance in inverters. The invention also relates to a method for producing the microelectronic component.

Abstract: The power semiconductor component has a semiconductor body which is electrically supplied through a contact clip. A solder ball connects the semiconductor body to the contact clip. The contact clip has a meandering electrical supply to a solder land, into which the solder ball is inserted.

Abstract: In a method for fastening electronic components on a substrate by means of pressure sintering, which includes providing a layer of sinterable metal powder on a surface of one component, assembling the components engaging the layer and then, while exerting a pressure on the components, applying heat to sinter the layer of material, an improvement comprises forming the layer of sinterable metal powder by vaporizing a metal and condensing the metal as a nanocrystalline metal powder on the surface. Preferably, the metal powder is silver and is applied in a precipitation chamber.

Abstract: The subject matter of the application is directed to a power semiconductor component, whereby, in addition to a load transistor, a plurality of transistors and resistors are monolithically integrated and form respective current mirrors together with the load transistor. Advantageously, resistors of polysilicon are produced simultaneously with gate electrodes, and resistors of aluminum are produced simultaneously with a contacting layer. A largely independent measurement of the load current, of the semiconductor temperature, and of the saturation voltage of the load transistor as well as an improvement in the measuring precision are possible as a result of the subject matter of the application.

Abstract: In a power semiconductor component a ceramic substrate (SUB) and a metallic baseplate (BP) are connected, in order, via a connecting layer (2), a buffer layer (DP) made of a material having a low yield point and high thermal conductivity as well as a further connecting layer (3). The mechanical connections between the ceramic substrate and the baseplate have a high shear strength. Premature material fatigue and cracking on account of the different thermal expansion of the ceramic substrate and the baseplate are avoided by means of plastic deformation of the buffer layer. Connecting layers are, for example, sintered silver powder layers such as are advantageously used in the low-temperature connection technique for power semiconductor components.

Abstract: A method for producing a semiconductor modular structure includes placing semiconductor bodies, a ceramic substrate with metallizing, and a metal base plate, in an elastomer compression mold. A heatable pressure ram with a surface being concave relative to the base plate is placed on the base plate. At least the base plate and the ceramic substrate are convexely deformed and joined with pressure exerted by the pressure ram, at a temperature above room temperature.

Abstract: The invention is directed to a method wherein pressure is exerted onto a semiconductor surface by a chemically inert and non-solid medium. An opposite pressure is prevented from building up in an intermediate layer, for example, with the assistance of a seal. A connection between the semiconductor and the substrate occurs by pressure sintering or by diffusion welding. A contact between an active, inside region of the semiconductor and a plunger can be avoided since the plunger has a raised and annular outside region for sealing, and the actual pressing power is effected by the pressure medium via a bore situated in the plunger. This raised edge for sealing can also be situated on the semiconductor instead of being situated on the plunger. When a semiconductor component is extrusion-coated with a plastic melt, then this plastic melt itself can serve as a pressure medium.

Abstract: A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.

Abstract: A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.

Abstract: A method and apparatus for fastening semiconductor components, such as power semiconductors, onto substrates is a diffusion welding method wherein the surfaces to be joined are provided with precious metal contact layers and are pressed together with at least 500 kp/cm.sup.2 at a moderate temperature of approximately 150 to 200 degrees C. Components which have a structured or shaped upper side can be joined to substrates when they are inserted in common with a member of elastically deformable material, such as silicone rubber, into a receptacle chamber that is closed by a movable die which transmits the pressing power. The deformable member completely fills out the remaining interior of the receptacle chamber when the pressing power is reached.

Abstract: A pressure sintering method and apparatus provides that surfaces to be joined are pressed together with a pressure of at least 900 N/cm.sup.2 at a sintering temperature upon the interposition of a metal powder paste which serves to fasten electronic components, such as power semiconductors, to substrates. Components having a structural upper side can be pressure sintered when they are inserted into a receptacle chamber closed by a movable die together with a member of elastically deformable material, such as silicone rubber, which transmits the sintering pressure. The deformable member completely fills out the remaining space of the receptacle chamber when the sintering pressure reached.

Abstract: A pressure sintering method and apparatus provides that surfaces to be joined are pressed together with a pressure of at least 900 N/cm.sup.2 at a sintering temperature upon the interposition of a metal powder paste which serves to fasten electronic components, such as power semiconductors, to substrates. Components having a structured upper side can be pressure sintered when they are inserted into a receptacle chamber closed by a movable die together with a member of elastically deformable material, such as silicone rubber, which transmits the sintering pressure. The deformable member completely fills out the remaining space of the receptacle chamber when the sintering pressure reached.

Abstract: A method and apparatus for fastening semiconductor components, such as power semiconductors, onto substrates is a diffusion welding method wherein the surfaces to be joined are provided with precious metal contact layers and are pressed together with at least 500 kp/cm.sup.2 at a moderate temperature of approximately 150 to 200 degrees C. Components which have a structured or shaped upper side can be joined to substrates when they are inserted in common with a member of elastically deformable material, such as silicone rubber, into a receptacle chamber that is closed by a movable die which transmits the pressing power. The deformable member completely fills out the remaining interior of the receptacle chamber when the pressing power is reached.

Abstract: In order to secure electronic components, and particularly large-area power semiconductors, to a substrate, first a paste formed of metal powder and a solvent is applied in the form of a layer to a contacting layer of the component and/or a contact surface of the substrate. The layer of paste is then dried. When the paste has dried, the component is placed onto the substrate, whereupon the entire arrangement is heated to a relatively low sintering temperature preferably between 180.degree. C. and 250.degree. C., and with simultaneous application of a mechanical pressure of at least 900 N/cm.sup.2. A connection which is thus achieved by such a pressure sintering at relatively low sintering temperatures is particularly suitable for securing power semiconductors produced in MOS-technology to a substrate.