Patents by Inventor Herman C. Chui

Herman C. Chui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • lll-phosphide light emitting devices with thin active layers
    Patent number: 7087941
    Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.
    Type: Grant
    Filed: November 5, 2001
    Date of Patent: August 8, 2006
    Assignee: Philips Lumileds Lighting Company, LLC
    Inventors: Nathan F. Gardner, Fred A. Kish, Herman C. Chui, Stephen A. Stockman, Michael R. Krames, Gloria E. Hofler, Christopher Kocot, Nicolas J. Moll, Tun-Sein Tan
  • AIGaInP light emitting devices with thin active layers
    Publication number: 20020127751
    Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.
    Type: Application
    Filed: November 5, 2001
    Publication date: September 12, 2002
    Inventors: Nathan F. Gardner, Fred A. Kish, Herman C. Chui, Stephen A. Stockman, Michael R. Krames, Gloria E. Hofler, Christopher Kocot, Nicolas J. Moll, Tun-Sein Tan
  • ALGAINP LIGHT EMITTING DEVICES WITH THIN ACTIVE LAYERS
    Publication number: 20010020703
    Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.
    Type: Application
    Filed: July 24, 1998
    Publication date: September 13, 2001
    Inventors: NATHAN F. GARDNER, FRED A. KISH, HERMAN C. CHUI, STEPHEN A. STOCKMAN, MICHAEL R. KRAMES, GLORIA E. HOFLER, CHRISTOPHER KOCOT, NICOLAS J. MOLL