Abstract: The invention relates to an apparatus for transporting a substrate into or out of a treatment apparatus, to a treatment apparatus, to a method of processing a substrate and to a treatment system having a movement arrangement for moving such an apparatus for transporting a substrate. In this case, the apparatus for transporting a substrate has a substrate carrier that includes a horizontally extending holding area and one or a plurality of gripping arms. The holding area is even and uniform on a first surface facing the substrate, the shape of said holding area substantially corresponding to the shape of the substrate and the area size of said holding area being substantially the same as the area size of the substrate, the substrate being held with its rear side on the holding area merely by its weight.

Abstract: The invention relates to a plasma-treatment device, in which a plasma electrode unit can be inserted into and removed from a processing chamber, and in which high-frequency power generated by a generator is transmitted to the plasma electrode unit by means of one or more electromagnetic fields and without an electrical ohmic contact. For this purpose, the plasma-treatment device comprises a transmission apparatus, which contains a primary coupling part, which is arranged inside the processing chamber and can generate an electromagnetic field. The plasma electrode unit contains a secondary coupling part, which is rigidly connected to the plasma electrode unit and is suitable for receiving the electromagnetic field and converting it into alternating electrical power. Furthermore, a method for operating such a plasma-treatment device is provided.

Abstract: The invention relates to an electrode unit comprising a plurality of plasma electrode pairs, which, at a specific applied voltage, are suitable for igniting a plasma between a first plasma electrode and a second plasma electrode of each plasma electrode pair; at least one internal electrical supply network that is suitable for supplying a first voltage to all the first plasma electrodes and to supply a second voltage to all the second plasma electrodes, at least one of the voltages being high frequency; and a first and a second connection terminal suitable for feeding the first voltage and the second voltage into the at least one supply network. The internal electrical supply network contains a plurality of lines, wherein by way of the arrangement, the geometric dimensions and/or the material of the lines, and/or the arrangement of a feed point of the first or second voltage within the supply network, the supply network is adapted to the electrode unit and the frequency of the first and/or the second voltage.

Abstract: The device for plasma processing as per the invention is comprised of a processing chamber with at least two plasma processing zones with process gas flowing through them, a gas inlet that is suitable for feeding the process gas to the at least two plasma processing zones, and a gas outlet that is suitable for discharging exhaust gas from the processing chamber, as well as a circulation unit with a circulation line and a circulation pump, wherein the circulation unit is suitable for feeding at least a portion of the exhaust gas into the gas inlet and wherein the exhaust gas that is fed into the gas inlet is a mixture of gases that are discharged from at least two of the plasma processing zones.

Abstract: A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber.

Abstract: A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber.

Abstract: A substrate processing apparatus includes an evacuatable process chamber configured to receive a substrate carrier having at least one substrate, a plasma generating module, a gas feed, a gas discharge and a vapor etching module provided in the process chamber. A substrate processing method includes introducing a substrate carrier including at least one substrate into an evacuatable process chamber, generating a plasma in a plasma process using a plasma generating module in a gas or a gas mixture, performing a vapor etching of the at least one substrate before, after or alternatingly with the plasma process and performing at least one of a coating, etching, surface modification and cleaning of the substrate.