Abstract: A method for functionalizing a surface of a dielectric plate that is transparent to visible light—to be able to examine the dielectric plate using optical microscopy—includes depositing a negative film on the dielectric slide. The negative film comprises a polymerizable composition that polymerizes when exposed to an electron beam. The polymerizable composition is polymerized—by exposing the negative film to the electronic beam—at a set of points representing a preset pattern. Non-polymerized portions of the polymerizable composition are dissolved—to develop the negative film—forming a set of pads of polymerized portions of the polymerizable composition. Each pad corresponds to one point of the preset pattern. A metal film is disposed on the negative film, and the developed negative film is dissolved to define holes through the metal film. Each of the holes corresponds to a base of one pad of the set of pads.

Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.

Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.