Patents by Inventor Herve de Lambilly

Herve de Lambilly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6043644
    Abstract: The present invention concerns the domain of inductive contactless sensors, allowing the position and/or the movement of a target sensitive to a magnetic field to be detected. The invention provides a miniature sensor comprising at least a primary coil generating an alternating magnetic field and at least two secondary coils for picked up such field, the coils being planar. The amplitude of the signal picked up by each coil is when the target passes in front of the coils, so that by measuring the signal amplitude or phase modulation, the speed and the direction of movement, or position of the object to be detected, is detected.
    Type: Grant
    Filed: April 22, 1997
    Date of Patent: March 28, 2000
    Assignee: Cesm Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Developpement
    Inventors: Yves de Coulon, Johan Wilhelm Bergqvist, Herve de Lambilly
  • Patent number: 5210451
    Abstract: A power semiconductor circuit comprises a gate-turn-off semiconductor component (FCTh1, FCTh2) having an anode, a cathode and a gate, a diode (D1, D2) and a drive circuit which is connected to the gate by a large-area, low-inductance stripline (11) and which generates a current pulse for turning off the semiconductor component. The diode (D1, D2) is arranged in series with the semiconductor component (FCTh1, FCTh2), specifically in such a way that the diode (D1, D2) and semiconductor component (FCTh1, FCTh2) form a quarter-bridge arm. Provided in parallel with the series circuit of the semiconductor component (FCTh1, FCTh2) and diode (D1, D2) is a low-inductance blocking capacitor (C1, C2) for absorbing the reverse recovery voltage peaks of the diode (D1, D2). The diode (D1, D2) and blocking capacitor (C1, C2) are arranged with low inductance and spatially immediately adjacent to the semiconductor component.
    Type: Grant
    Filed: May 28, 1991
    Date of Patent: May 11, 1993
    Assignee: Asea Brown Boveri Ltd.
    Inventors: Horst Gruning, Herve de Lambilly, Ferdinand Steinruck