Abstract: An imaging instrument for controlling a target designation makes it possible to visualise a target designation spot (SP) within a scene (SC), while using only one image sensor. To do this, a filter is arranged on the image sensor, in a restricted area (ZC) of same. The filter makes it possible to increase a contrast and a signal-to-noise ratio for an image of the target designation spot, when a misalignment (DP) is produced in order to bring the image of the target designation spot into the area of the filter.

Abstract: An imaging instrument for controlling a target designation makes it possible to visualise a target designation spot (SP) within a scene (SC), while using only one image sensor. To do this, a filter is arranged on the image sensor, in a restricted area (ZC) of same. The filter makes it possible to increase a contrast and a signal-to-noise ratio for an image of the target designation spot, when a misalignment (DP) is produced in order to bring the image of the target designation spot into the area of the filter.

Abstract: The present invention relates to a method for manufacturing a bispectral matrix detector comprising the following steps: providing a monotype matrix detector; depositing, on the sensitive surface (3) of the monotype matrix detector, a dual-band interference filter (5) allowing the radiation in the first and second frequency bands to pass therethrough; depositing a first interference filter (4a) vertically in line with photosites (31a) intended for sensing in the first frequency band; depositing a second interference filter (4b) vertically in line with photosites (31b) intended for sensing in the second frequency band, one of the first (4a) and second (4b) interference filters being a low-pass filter cutting the second frequency band, and the other a high-pass filter cutting the first frequency band.

Abstract: The present invention relates to a method for manufacturing a bispectral matrix detector comprising the following steps: providing a monotype matrix detector; depositing, on the sensitive surface (3) of the monotype matrix detector, a dual-band interference filter (5) allowing the radiation in the first and second frequency bands to pass therethrough; depositing a first interference filter (4a) vertically in line with photosites (31a) intended for sensing in the first frequency band; depositing a second interference filter (4b) vertically in line with photosites (31b) intended for sensing in the second frequency band, one of the first (4a) and second (4b) interference filters being a low-pass filter cutting the second frequency band, and the other a high-pass filter cutting the first frequency band.

Abstract: The invention relates to a method for producing an infrared radiation sensor, said sensor comprising an infrared photodiode array formed in a first material and a reading circuit formed in a second material, said method comprising the steps of: sticking, through molecular adhesion, a first material side surface onto an optically transparent crystalline material side surface having infrared radiation and a coefficient of thermal expansion similar to that of the second material, give or take 20%; thinning the body of the first material side surface so that the latter is less that 25 ?m; producing infrared-sensitive photodiodes onto the thus-thinned first material side surface; depositing contact ball bearings onto the infrared photodiodes; and mounting the reading circuit onto the first material side surface through flip chip technology.