Abstract: A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.

Abstract: Discloses is an unpowered transparent antenna that can be installed to reduce or remove a radio wave shadow area such as an interior even without power. In order to achieve the objectives, an unpowered transparent antenna includes: a first conductive layer having a mesh structure; and a second conductive layer having a mesh structure and positioned on the bottom of the first conductive layer, in which an aperture ratio of the first and second conductive layers is 50% or more.

Abstract: A semiconductor manufacturing apparatus according to an embodiment of the present invention comprises: an ultraviolet generating part which is disposed in an ultraviolet generating chamber and generates ultraviolet rays of a target wavelength; a substrate driving part including a chuck which is disposed in a process chamber where a substrate fed therein is treated with ultraviolet rays and supports the fed substrate, and an axis which rotates and moves up and down the chuck; and a window which is disposed between the ultraviolet generating chamber and the process chamber and transmits the generated ultraviolet rays to the process chamber.