Abstract: A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.

Abstract: A method for manufacturing a semiconductor device can form a thick lower electrode made of Pt. The method begins with the preparation of an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs. Thereafter, a seed layer is formed on top of the active matrix and a dummy oxide layer is formed on top of the seed layer. Then, the dummy oxide layer is patterned into a predetermined configuration, thereby exposing portions of the seed layer which are located on top of the conductive plugs. The exposed portions are filled with a conductive material to a predetermined thickness. The dummy oxide layer and portions of the seed layer which are not covered with the conductive material are removed, thereby obtaining lower electrodes. A capacitor dielectric layer is on the lower electrodes. Finally, an upper electrode layer is formed on the capacitor dielectric layer.

Abstract: A method for manufacturing a semiconductor device can form a thick lower electrode made of Pt. The method begins with the preparation of an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs. Thereafter, a seed layer is formed on top of the active matrix and a dummy oxide layer is formed on top of the seed layer. And then, the dummy oxide layer is patterned into a predetermined configuration, thereby exposing portions of the seed layer which are located on top of the conductive plugs. The exposed portions are filled with a conductive material to a predetermined thickness. And, the dummy oxide layer and portions of the seed layer which are not covered with the conductive material are removed, thereby obtaining lower electrodes. A capacitor dielectric layer is on the lower electrodes. Finally, an upper electrode layer is formed on the capacitor dielectric layer.

Abstract: A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.

Abstract: Digital TV receiver including an antenna, a tuner for synchronizing one of a plurality of digital TV signals received at the antenna, the digital TV signal having data streams, and each data stream having a plurality of symbols, a comparing unit for comparing data streams of the synchronized digital TV signal to an already stored symbol pattern of a synchronizing signal in succession, to provide a positive number if found identical as a result of the comparison or either one of a negative value or a zero if found different as the result of the comparison, memories each having an identical initial value the memories corresponding to symbols in the data stream in one to one fashion, an adder for adding signals provided as many as a number of symbols in the data stream from the comparing unit in succession to corresponding initial values in the memories in succession when each of the data streams is received and keeping updating the initial values in the memories by storing the added signals to corresponding mem

Abstract: Method and device for detecting a synchronizing signal from a digital T.V. signal is disclosed. An initial value is stored as a maximum value in each of memories arranged to match to symbols consisting a datastream of the digital T.V. signal. A comparator has a symbol pattern stored therein in advance, which is identical to a symbol pattern of an actual synchronizing signal contained in the digital T.V. signal. Upon reception of the datastreams of the digital T.V. signal, the comparator compares the symbol pattern stored therein already to the symbols in the received datastream in sequence, to provide zero signals if identical and minus values if not identical. An adder adds a signal from the comparator and an initial value stored in a corresponding memory among the memories and stores in the corresponding memory, to update the initial value in each memory.

Abstract: An auto-coefficient renewal digital channel equalizer is disclosed, including an auto-coefficient renewing device for automatically renewing a coefficient using received data and an error signal, an error detecting device for detecting an error signal from a signal of the auto-coefficient renewing device, a device for determining convergence or divergence of the error signal detected in the error detecting device to produce a convergence or divergence signal according to a result of the determination, and an error processing device for shifting down the error signal detected in the error detecting device a certain number of bits in response to a convergence signal to produce a signal smaller than the received error signal to the auto-coefficient renewing device, thereby processing the coefficient renewal at the same rate with the data for all of the taps of an equalizer. The equalizer converges at an increased rate, and operation of the equalizer is made more stable even in diversion of a reception channel.

Abstract: A high definition television receiver includes a comb filter for receiving trellis coded HDTV data, the comb filter turning on if there is interference from an NTSC signal having a co-channel in the data to thereby remove the interference, and the comb filter turning off if there is no interference to thereby pass the received HDTV data; a determining part for determining if the comb filter is turned on/off and providing a comb filter ON/OFF signal according to the determination result; and a united trellis decoder having united state transitions of a partial response trellis decoder and an optimal trellis decoder, the united trellis decoder having a signal group divided into signal groups of the partial response trellis decoder and the optimal trellis decoder, thereby operating as the partial response trellis decoder according to the comb filter ON signal and operating as the optimal trellis decoder according to the comb filter OFF signal input from the determining part.

Abstract: A Viterbi decoder for receiving and decoding a signal transmitted through a transmission channel in a vestigial side band (VSB) transmission system, in a high definition television (HDTV), which operates at the same speed as a symbol rate, can simply accomplish a hardware implementation using simplified memory system and a single decoder in order to restore an encoded signal, compared to the conventional art in which 12 decoders are used in restoring the encoded signal. Also, since the memory configuration thereof is regular, when it is intended to extend the observation sections, the memory structure can be extended easily. Moreover, the present invention can be adopted by extending easily to 3-bit 8 state or above as well as to 2-bit 4-state by means of a general Viterbi decoding algorithm.