Patents by Inventor Heung Young Park

Heung Young Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240195673
    Abstract: An apparatus and method for multiplexing signals using layered division multiplexing are disclosed. A signal multiplexing apparatus according to an embodiment of the present invention includes a combiner configured to combine a core layer signal and an enhanced layer signal at different power levels, and a time interleaver configured to perform interleaving applied to both the core layer signal and the enhanced layer signal.
    Type: Application
    Filed: February 20, 2024
    Publication date: June 13, 2024
    Inventors: Sung-Ik PARK, Jae-Young Lee, Sun-Hyoung Kwon, Heung-Mook KIM, Nam-Ho Hur
  • Patent number: 12006576
    Abstract: Provided are a plated steel sheet and a method for manufacturing same, the plated steel sheet comprising: a base steel sheet; a Zn—Mg—Al plating layer provided on at least one surface of the base steel sheet; and an Fe—Al inhibition layer provided between the base steel sheet and the Zn—Mg—Al plating layer. The plating layer comprises, by weight %, 4 to 10% of Mg and 5.1-25% of Al and the remainder being Zn and unavoidable impurities with respect to components not including iron (Fe) diffused from the base steel sheet. The plating layer comprises a 24-50% MgZn2 phase in phase fraction. In the MgZn2 phase, an Al single phase is present in the ratio of 1-30% relative to the cross-sectional area of the total MgZn2 phase.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: June 11, 2024
    Assignees: POSCO, STEEL & CONVERGENCE TECHNOLOGY RESEARCH ASSOCIATION, POSCO COATED & COLOR STEEL CO., LTD.
    Inventors: Sung-Joo Kim, Kyung-Kwan Park, Moon-Hi Hong, Heung-Yun Kim, Tae-Yeul Park, Myung-Soo Kim, Il-Ryoung Sohn, Tae-Chul Kim, Dae-Young Kang
  • Publication number: 20240171197
    Abstract: A bit interleaver, a bit-interleaved coded modulation (BICM) device and a bit interleaving method are disclosed herein. The bit interleaver includes a first memory, a processor, and a second memory. The first memory stores a low-density parity check (LDPC) codeword having a length of 64800 and a code rate of 7/15. The processor generates an interleaved codeword by interleaving the LDPC codeword on a bit group basis. The size of the bit group corresponds to a parallel factor of the LDPC codeword. The second memory provides the interleaved codeword to a modulator for quadrature phase shift keying (QPSK) modulation.
    Type: Application
    Filed: January 31, 2024
    Publication date: May 23, 2024
    Inventors: Sung-Ik PARK, Sun-Hyoung KWON, Jae-Young LEE, Heung-Mook KIM, Nam-Ho HUR
  • Patent number: 11943090
    Abstract: An apparatus and method for multiplexing signals using layered division multiplexing are disclosed. A signal multiplexing apparatus according to an embodiment of the present invention includes a combiner configured to combine a core layer signal and an enhanced layer signal at different power levels, and a time interleaver configured to perform interleaving applied to both the core layer signal and the enhanced layer signal.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: March 26, 2024
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sung-Ik Park, Jae-Young Lee, Sun-Hyoung Kwon, Heung-Mook Kim, Nam-Ho Hur
  • Patent number: 11923872
    Abstract: A bit interleaver, a bit-interleaved coded modulation (BICM) device and a bit interleaving method are disclosed herein. The bit interleaver includes a first memory, a processor, and a second memory. The first memory stores a low-density parity check (LDPC) codeword having a length of 64800 and a code rate of 7/15. The processor generates an interleaved codeword by interleaving the LDPC codeword on a bit group basis. The size of the bit group corresponds to a parallel factor of the LDPC codeword. The second memory provides the interleaved codeword to a modulator for quadrature phase shift keying (QPSK) modulation.
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: March 5, 2024
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sung-Ik Park, Sun-Hyoung Kwon, Jae-Young Lee, Heung-Mook Kim, Nam-Ho Hur
  • Publication number: 20240071785
    Abstract: A semiconductor manufacturing apparatus according to an embodiment of the present invention comprises: an ultraviolet generating part which is disposed in an ultraviolet generating chamber and generates ultraviolet rays of a target wavelength; a substrate driving part including a chuck which is disposed in a process chamber where a substrate fed therein is treated with ultraviolet rays and supports the fed substrate, and an axis which rotates and moves up and down the chuck; and a window which is disposed between the ultraviolet generating chamber and the process chamber and transmits the generated ultraviolet rays to the process chamber.
    Type: Application
    Filed: June 23, 2022
    Publication date: February 29, 2024
    Inventors: Seoung-Ju Na, Heung-Gyoon PARK, Keun Young LIM, Moo Hwan KIM
  • Publication number: 20040231032
    Abstract: Disclosed herein is a spandex cap. The spandex cap includes a side/rear sweatband formed by extending a crown to a predetermined length at both side and rear portions of the cap and by inwardly folding the extended portion of the crown to optimize the elasticity of a stretch yarn used as a weft yarn of a spandex textile. In this case, the side/rear sweatband absorbs sweat perspiring from both side and rear portions of a user's head. Further, a plurality of sewn lines are formed by sewing the inwardly folded side/rear sweatband to the crown at selected positions for preventing the side/rear sweatband from being unfolded and drooped.
    Type: Application
    Filed: May 19, 2003
    Publication date: November 25, 2004
    Inventor: Heung Young Park