Patents by Inventor Hi Gyu Moon

Hi Gyu Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9285332
    Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.
    Type: Grant
    Filed: April 11, 2014
    Date of Patent: March 15, 2016
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ho Won Jang, Seok Jin Yoon, Jin Sang Kim, Chong Yun Kang, Ji Won Choi, Hi Gyu Moon
  • Publication number: 20140217404
    Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.
    Type: Application
    Filed: April 11, 2014
    Publication date: August 7, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ho Won JANG, Seok Jin YOON, Jin Sang KIM, Chong Yun KANG, Ji Won CHOI, Hi Gyu MOON
  • Patent number: 8785924
    Abstract: Disclosed are a high-sensitivity transparent gas sensor and a method for manufacturing the same. The transparent gas sensor includes a transparent substrate, a transparent electrode formed on the transparent substrate and a transparent gas-sensing layer formed on the transparent electrode. The transparent gas-sensing layer has a nanocolumnar structure having nanocolumns formed on the transparent electrode and gas diffusion pores formed between the nanocolumns.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: July 22, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Ho Won Jang, Seok Jin Yoon, Jin Sang Kim, Chong Yun Kang, Ji Won Choi, Hi Gyu Moon
  • Publication number: 20130146865
    Abstract: Disclosed are a high-sensitivity transparent gas sensor and a method for manufacturing the same. The transparent gas sensor includes a transparent substrate, a transparent electrode formed on the transparent substrate and a transparent gas-sensing layer formed on the transparent electrode. The transparent gas-sensing layer has a nanocolumnar structure having nanocolumns formed on the transparent electrode and gas diffusion pores formed between the nanocolumns.
    Type: Application
    Filed: July 6, 2012
    Publication date: June 13, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ho Won JANG, Seok Jin YOON, Jin Sang KIM, Chong Yun KANG, Ji Won CHOI, Hi Gyu MOON
  • Publication number: 20110212323
    Abstract: The present invention relates to a method for preparing oxide thin films with high sensitivity and reliability, which can be advantageously used in the fabrication of articles such as gas sensors. The present invention establishes a high reliability process for preparing large area microsphere templates which may be applicable to silicone semiconductor processes by simple plasma surface treatment and spin coating. The present invention achieves remarkably enhanced sensitivities of thin films of gas sensors by controlling the nanostructure shapes of hollow hemisphere oxide thin films by using simple plasma treatment. In particular, the gas sensor based on the nanostructured TiO2 hollow hemisphere according to the present invention exhibits higher sensitivity, faster response and recovery speed to CO gas over conventional TiO2 gas sensors.
    Type: Application
    Filed: September 1, 2010
    Publication date: September 1, 2011
    Inventors: Ho Won Jang, Seok-Jin Yoon, Jin Sang Kim, Chong Yun Kang, Ji-Won Choi, Hi Gyu Moon