Patents by Inventor Hicham HAIBI

Hicham HAIBI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Discharge circuit and semiconductor memory device
    Patent number: 10083755
    Abstract: A discharge circuit includes first and second transistors of a first polarity, third and fourth transistors of a second polarity, and first and second current sources having first ends electrically connected to first end of the third transistor and first end of the fourth transistor, respectively, and second ends supplied with a first voltage. First end of the first transistor is supplied with a second voltage higher than the first voltage. First end of the second transistor is electrically separated from the first end of the first transistor. Gate and second end of the first transistor, gate of the second transistor, and second end of the third transistor are electrically connected to one another. Second end of the second transistor, gate of the third transistor, and second end and gate of the fourth transistor are electrically connected to one another.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: September 25, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Hicham Haibi, Katsuaki Sakurai
  • DISCHARGE CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20180211706
    Abstract: A discharge circuit includes first and second transistors of a first polarity, third and fourth transistors of a second polarity, and first and second current sources having first ends electrically connected to first end of the third transistor and first end of the fourth transistor, respectively, and second ends supplied with a first voltage. First end of the first transistor is supplied with a second voltage higher than the first voltage. First end of the second transistor is electrically separated from the first end of the first transistor. Gate and second end of the first transistor, gate of the second transistor, and second end of the third transistor are electrically connected to one another. Second end of the second transistor, gate of the third transistor, and second end and gate of the fourth transistor are electrically connected to one another.
    Type: Application
    Filed: August 29, 2017
    Publication date: July 26, 2018
    Inventors: Hicham HAIBI, Katsuaki SAKURAI